IRIS-G6351S

Data Sheet No. PD 96945A IRIS-G6351S Features • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (50uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit • Various kinds of protection functions • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) • Thermal Shutdown with latch mode (TSD) IRIS-G6351S 650 3.95Ω INTEGRATED SWITCHER Package Outline TO-220 Fullpack (5 Lead) Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) 230±15% 85 to 264 Pout(W) Note 1 65 30 Descriptions Note 1: The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above. IRIS-G6351S is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-G6300 OCP/FB Vin GND S D www.irf.com IRIS-G6351S Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak IDMAX Definition Drain Current *1 Maximum switching current *5 Terminals Max. Ratings 1-2 2.7 1-2 2.7 Units A A Note Single Pulse V2-3=0.82V Ta=-20~+125℃ Single Pulse VDD=99V, L=20mH IL peak=2.7A EAS Vin Vth P D1 P D2 TF Top Tstg Tch Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature 1-2 4-3 5-3 1-2 4-3 - 92 35 6 24 1.5 0.14 -20 ~ +125 -20 ~ +125 -40 ~ +125 150 mJ V V W W W ℃ ℃ ℃ ℃ With infintite heatsink Without heatsink Specified by Vin×Iin Refer to recommended operating temperature *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. Fig.1 V2-3 The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. www.irf.com IRIS-G6351S Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP) Iin(H) Vin(La.OFF) Tj(TSD) Definition Operation start voltage Operation stop voltage *6 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage Latch circuit sustaining current *7 Latch circuit release voltage *6,7 Thermal shutdown operating temperature MIN 15.8 9.1 12 0.7 0.7 23.2 7.9 135 Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 - MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 70 10.5 - Units V V mA µA µsec V mA V µA V ℃ Test Conditions Vin=0→19.4V Vin=19.4→9.1V Vin=15V Vin=0→27.8 V Vin=27.8→(Vin(OFF)-0.3)V Vin=27.8→7.9V - *6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product *7 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol VDSS IDSS Definition Drain-to-Source breakdown voltage Drain leakage current MIN 650 - Ratings TYP - MAX 300 3.95 250 2.4 Units V µA Ω nsec ℃ /W Test Conditions ID=300µA V3- 2 =0V(short) VDS =650V V3-2=0V(short) V3-2=10V ID=0.6A RDS(ON) On-resistance tf Switching time θch-F Thermal resistance Between channel and internal frame www.irf.com IRIS-G6351S IRIS-G6351S A.S.O. temperature derating coefficient curve IRIS-G6351S MOSFET 　 A.S.O. Curve 100 Ta=25ºC Single Pulse 100 A.S.O. temperature derating coefficient[%] 80 10 Drain Current ID [A] Drain current limit by ON resistance 1ms 0.1ms 60 1 40 20 0.1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0 0 20 40 60 80 100 120 0.01 1 10 100 1000 Drain-to-Source Voltage VDS [V] Internal frame temperature TF [℃] IRIS-G6351S Maximum Switching current derating curve T a=‐ ～+125 ℃ 20 　　　　　　 　　　　　 IRIS-G6351S Avalanche energy derating curve 100 3.0 [A] EAS temperature derating coefficient[%] 2.5 80 DMAX Maximum Switchng Current I 2.0 60 1.5 40 1.0 0.5 20 0.0 0.8 0.9 1.0 V2-3 [V] 1.1 1.2 0 25 50 75 100 125 150 Channel temperature Tch [℃] www.irf.com IRIS-G6351S IRIS-G6351S MOSFET Ta-PD1 Curve 30 PD1=24[W] IRIS-G6351S MIC TF-PD2 Curve 0.16 PD2=0.14[W] 0.14 0.12 25 20 With infinite heatsink Power dissipation PD2[W] 120 140 160 Power dissipation P D1[W] 0.10 0.08 0.06 0.04 15 10 Without heatsink PD1=1.5[W] 5 0.02 0.00 0 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[℃] Internal frame temperature TF[℃] IRIS-G6351S Transient thermal resistance curve 10 Transient thermal resistance θch-c[℃/W] 1 0.1 0.01 0.001 1µ 10µ 100µ ti e t [sec] m 1m 10m 100m www.irf.com IRIS-G6351S Block Diagram 4 Vin OVP UVLO ＋ － ＋ － REG Latch Internal Bias Delay TSD ＋ － REG 1 D PWM OSC Latch SQ R Drive 2 S OCP ＋ － Comp. Icont 5 OCP/FB 3 GND Lead Assignments Pin No. IRIS 1 2 3 4 5 Symbol D S GND Vin OCP/FB Descri ption Drain Pin Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Function MOSFET drain MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit D S GND Vin OCP/FB www.irf.com IRIS-G6351S Case Outline 4.2 ±0.2 φ3.2 ±0.2 2.8 ±0.2 4 ±0.2 7.9 ±0.2 16.9 ±0.3 IRIS a b 2.6 ±0.1 4.1 ±0.5 2-(R1) 8.7 ±0.5 0.94 ±0.15 0.85 -0.1 +0.2 R-end (4.6) 0.45 -0.1 +0.2 4xp1.7±0.1=(6.8) 5.08 ±0.6 10 ±0.2 0.7 0.7 a：Type Number G6351S b：Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter：Day Arabic Numerals 5th letter : Registration Symbol Weight : Approx. 2.3g Dimensions in mm DWG.No.：TG3A-1128 1 2 3 4 5 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com