IRIS4007K

Data Sheet No. PD60183-C IRIS4007(K) INTEGRATED SWITCHER Features • Primary current mode control, and secondary voltage mode control • Vcc over-voltage protection (latched) • Over-current and over-temperature protection • Quasi resonant, variable frequency operation • 5 pin TO-220 and TO-262 package • 0.4Ω Rds(on) max/ 200V MOSFET • Fully Characterized Avalanche Energy Packages IRIS4007 5 Lead TO-220 IRIS4007K 5 Lead TO-262 Descriptions The IRIS4007(K) is a dual mode voltage and current controller combined with a MOSFET in a single Package. The IRIS4007(K) are designed for use in AC/DC and DC/DC switching power supplies upto 100VDC nominal input and is capable of 30W for a nominal 48V input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation. Typical Connection Diagram Vin (AC/ DC) Vout (DC) 3 Drain Vcc 4 IRIS4007(K) FB Source Gnd 5 1 2 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our DesignTips and Application Notes (AN1018a, AN1024a, AN1025) for proper circuit board layout. www.irf.com 1 IRIS4007(K) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak IDmax EAS VCC VTH P D1 P D2 RthJC TJ TS Tf TOP TL Definition Peak drain current Maximum switching current Single pulse avalanche energy Power supply voltage OCP/FB terminal voltage Power dissipation for MOSFET Power dissipation for control part (MIC) Thermal resistance, junction to case Junction temperature Storage temperature Internal frame temperature in operation Ambient operating temperature Lead temp. (soldering, 10 seconds) Terminals 3-1 3-1 3-1 4-3 5-2 3-1 4-2 — — — — — — Max. Ratings 20 4.0 350 35 6 73 1.27 0.8 1.7 -40-125 -40-125 -20-125 -20-125 300 Units A mJ Note Single pulse V2-3 = 0.78V Tc=25oC Vdd=50V,L=10mH, Tc=25oC V With infinite heatsink W Without heatsink Specified by VIN x IIN °C/W °C Refer to recommended operating temperature Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the VDCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth(2) VOCP/FB Tth(2) ≥1.0µs Vth(2) 2 www.irf.com IRIS4007(K) Electrical Characteristics (for Control IC) VCC = 18V, (TA = 25°C) unless otherwise specified. Symbol VCCUV+ VCCUVIQCCUV IQCC TOFF/(MAX) TTH(2) TOFF/(MIN) VTH(1) VTH(2) IOCP/FB VCC(OVP) ICC(LA) VCC(LaOFF) TJ(TSD) Definition VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold UVLO mode quiescent current Quiescent operating VCC supply current Maximum OFF time Minimum input pulse width for quasi resonant signals Minimum OFF time OCP/FB terminal threshold voltage 1 OCP/FB terminal threshold voltage 2 OCP/FB terminal sink current VCC overvoltage protection limit Latch circuit holding current Latch circuit reset voltage Thermal shutdown activation temperature Min. Typ. Max. Units Test Conditions 14.4 9 — — 40 — — 0.68 1.3 1.1 20.5 — 6.6 140 16 10 — — — — — 0.73 1.45 1.35 22.5 — — — 17.6 11 100 30 60 1.0 1.5 0.78 1.6 1.7 24.5 400 8.4 — V mA V µA V oC V µA mA µsec VCC < VCCUV+ Electrical Characteristics (for MOSFET) (TA = 25°C) unless otherwise specified. Symbol VDSS IDSS RDS(ON) tr THj-C Definition Drain-to-source breakdown voltage Drain leakage current On-resistance Rise time (10% to 90%) Thermal resistance Min. Typ. Max. Units Test Conditions 200 — — — — — — — — — — 250 0.4 200 1.7 V µA Ω ns oC/W Vds=160V, VCC=0V Tj =125oC V3-1=10V, ID=4A Between junction and case www.irf.com 3 IRIS4007(K) Block Diagram 4 Vcc 3 START O.V.P LATCH D REG. DRIVE 1 T.S.D OSCILLATOR S Vth(1) 5 OCP/ FB + Comp.1 + Comp.2 Vth(2) 2 Ground Lead Assignments Pin # S y m b o l 1 S Description MOSFET Source terminal 2 Ground Ground terminal 3 D MOSFET Drain terminal 4 1 2 3 4 5 5 Vcc Control circuit supply volta g e OCP/FB Overcurrent detection, and Volta g e mode control feedback si g nal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit 4 www.irf.com IRIS4007(K) Case outline 5-Lead TO-220 01-6020 00 01-3042 01 (TS-001) www.irf.com 5 IRIS4007(K) Case outline 1.40 [.055] MAX. 10.29 [.405] 9.65 [.380] 4.83 [.190] 4.06 [.160] B 1.32 [.052] 1.22 [.048] 6.22[.245] MIN 6 9.65 [.380] 8.64 [.340] 6 8.00[.315] MAX 12345 C 12.70 [.500] 14.73 [.580] 5X 1.70 [.067] 4X 1.01[.040] 0.51[.020] A B 5X 0.63 [.025] 0.31 [.012] 2.92 [.115] 2.16 [.085] 0.25 [.010] 5-Lead TO-262 IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 10/17/2001 6 www.irf.com