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IRIS4009

IRIS4009

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IRIS4009 - INTEGRATED SWITCHER - International Rectifier

  • 数据手册
  • 价格&库存
IRIS4009 数据手册
Data Sheet No. PD60196 IRIS4009(K) INTEGRATED SWITCHER Features • Primary current mode control, and secondary voltage mode control • Vcc Over-voltage protection (latched) • Over-current & over-temperature protection • Quasi resonant, variable frequency operation • 5 pin TO-220 and TO-262 • 8.0Ω Rds(on) max/ 650V MOSFET • Fully Characterized Avalanche Energy IRIS4009 5 Lead TO-220 IRIS4009K 5 Lead TO-262 Packages Description The IRIS4009(K) is a dual mode voltage and current controller combined with a MOSFET in a single package. The IRIS4009(K) is designed for use in universal and single input AC/DC and DC/DC switching power supplies and is capable of powers up to 30W for a universal line input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation. Typical Connection Diagram Vin (AC/ DC) Vout (DC) 3 Drain Vcc 4 IRIS4009(K) FB Source Gnd 5 1 2 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our DesignTips and Application Notes (AN1018a, AN1024a, AN1025) for proper circuit board layout. www.irf.com 1 IRIS4009(K) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak IDmax EAS VCC VTH PD1 PD2 RthJC TJ TS Tf TOP TL Definition Peak drain current Maximum switching current Single pulse avalanche energy Power supply voltage OCP/FB terminal voltage Power dissipation for MOSFET Terminals 3-1 3-1 3-1 4-3 5-2 3-1 4-2 — — — — — — Max. Ratings 3.9 1.5 100 35 6 62.5 1.1 0.8 2.0 -40-125 -40-125 -20-125 -20-125 300 Units A mJ Note Single pulse V2-3 = 0.78V Tc=25o C Vdd=50V,L=20mH, G=12V, Ipk=1.5A V With infinite heatsink W Without heatsink Specified by VIN x I IN °C/W Power dissipation for control part (MIC) Thermal resistance, junction to case Junction temperature Storage temperature Internal frame temperature in operation Ambient operating temperature Lead temp. (soldering, 10 seconds) °C Refer to recommended operating temperature Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the VDCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth(2) V OCP/FB Tth(2) ≥1.0µ s Vth(2) 2 www.irf.com IRIS4009(K) Electrical Characteristics (for Control IC) VCC = 18V, (TA = 25°C) unless otherwise specified. Symbol VCCUV+ VCCUVIQCCUV IQCC TOFF/(MAX) TTH(2) TOFF/(MIN) VTH(1) VTH(2) IOCP/FB VCC(OVP) ICC(LA) VCC(LaOFF) TJ(TSD) Definition VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold UVLO mode quiescent current Quiescent operating VCC supply current Maximum OFF time Minimum input pulse width for quasi resonant signals Minimum OFF time OCP/FB terminal threshold voltage 1 OCP/FB terminal threshold voltage 2 OCP/FB terminal sink current VCC overvoltage protection limit Latch circuit holding current Latch circuit reset voltage Thermal shutdown activation temperature Min. Typ. Max. Units Test Conditions 14.4 9 — — 40 — — 0.68 1.3 1.1 20.5 — 6.6 140 16 10 — — — — — 0.73 1.45 1.35 22.5 — — — 17.6 11 100 30 60 1.0 1.5 0.78 1.6 1.7 24.5 400 8.4 — V mA V µA V oC V µA mA µsec VCC < VCCUV+ Electrical Characteristics (for MOSFET) (TA = 25°C) unless otherwise specified. Symbol VDSS IDSS RDS(ON) tr THj-C Definition Drain-to-source breakdown voltage Drain leakage current Min. Typ. Max. Units Test Conditions 650 — — — — 300 V µA Vds=520V, VCC=0V Tj =125o C V3-1=10V, ID=0.85A Between junction and case On-resistance Rise time (10% to 90%) Thermal resistance — — — — — — 8.0 120 2.0 Ω ns o C/W www.irf.com 3 IRIS4009(K) Block Diagram 4 Vcc 3 START O.V.P LATCH D REG. DRIVE 1 T.S.D OSCILLATOR S Vth(1) 5 OCP/ FB + Comp.1 + Comp.2 Vth(2) 2 Ground Lead Assignments Pin # Symbol 1 S Description MOSFET Source terminal 2 Ground Ground terminal 3 D MOSFET Drain terminal 4 12 3 4 5 5 Vcc Control circuit supply voltage OCP/FB Overcurrent detection, and Voltage mode control feedback signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit 4 www.irf.com IRIS4009(K) Case outline 5-Lead TO-220 01-6020 00 01-3042 01 (TS-001) www.irf.com 5 IRIS4009(K) Case outline 1.40 [.055] MAX. 10.29 [.405] 9.65 [.380] 4.83 [.190] 4.06 [.160] 1.32 [.052] 1.22 [.048] B 6.22[.245] MIN 6 8.00[.315] MAX 9.65 [.380] 8.64 [.340] 1 2 3 4 5 6 C 12.70 [.500] 14.73 [.580] 5X 1.70 [.067] 4X 1.01[.040] 0.51[.020] A B 5X 0.63 [.025] 0.31 [.012] 2.92 [.115] 2.16 [.085] 0.25 [.010] 5-Lead TO-262 IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 12/3/2001 6 www.irf.com
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