IRK.105

Bulletin I27133 rev. I 09/04 IRK.105 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500V RMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IT(AV) or I F(AV) @ 85°C IO(RMS) ( *) ITSM @ 50Hz IFSM @ 60Hz It 2 2 IRK.105 105 235 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 150 - 40 to130 Units A A A A KA 2s KA 2s KA 2√s V o o @ 50Hz @ 60Hz I √t VRRM range TSTG TJ (*) As AC switch. C C www.irf.com 1 IRK.105 Series Bulletin I27133 rev. I 09/04 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.105 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 IRRM IDRM 130°C mA 20 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 235 A 1785 1870 1500 1570 2000 2100 I2t Max. I 2t for fusing 15.91 14.52 11.25 10.27 20.00 18.30 I2√t Max. I 2√t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 250 mA 400 150 A/µs 159.1 0.80 0.85 2.37 2.25 1.64 K A2√s V mΩ V VT(TO) Max. value of threshold KA2s t =10ms t =10ms t =10ms t =10ms t =10ms t =10ms 105 180 o conduction, half sine wave, TC = 85oC IRK.105 Units Conditions I(RMS) t =8.3ms reapplied or I(RMS) Sinusoidal half wave, Initial TJ = T J max. No voltage 100% VRRM TJ = 25oC, No voltage 100% VRRM TJ = 25oC, t =8.3ms reapplied t =8.3ms no voltage reapplied t =8.3ms reapplied t =8.3ms reapplied t =8.3ms no voltage reapplied t = 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = TJ max TJ = TJ max TJ = 25°C Initial TJ = TJ max. TJ = 25 o C, from 0.67 VDRM , t r < 0.5 µs, t p > 6 µs I TM =π x I T(AV), Ig = 500mA, TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x p x IAV < I < p x IAV (1) I2t for time t x = I2√t x √tx (4) I > p x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.105 Series Bulletin I27133 rev. I 09/04 Triggering Parameters PGM IGM Max. peak gate power IRK. 105 12 3 3 10 4.0 2.5 1.7 270 150 80 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C Anode supply = 6V resistive load Anode supply = 6V resistive load mA TJ = 25°C TJ = 125°C o 0.25 6 V mA TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 V V/µs 50 Hz, circuit to base, all terminals shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit 20 mA TJ = 130oC, gate open circuit IRK.105 Units Conditions (5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar wt Approximate weight Case style 0.1 5 3 110 (4) TO-240AA Nm gr (oz) JEDEC IRK.105 - 40 to 130 - 40 to 150 0.135 Units °C Conditions RthJC Max. internal thermal Per module, DC operation K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound ∆R Conduction (per Junction) Devices IRK.105 (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction 180o 0.04 120o 0.05 90o 0.06 60o 0.08 30 o 0.12 180o 0.03 Rect. wave conduction 120 o 0.05 90 o 0.06 60 o 0.08 30o 0.12 Units °C/ W www.irf.com 3 IRK.105 Series Bulletin I27133 rev. I 09/04 Ordering Information Table Device Code IRK 1 1 2 3 4 5 6 - T 2 105 3 / 16 4 A 5 S90 6 IRK.106 types With no auxiliary cathode Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs e.g. : IRKT106/16A etc. * * Available with no auxiliary cathode. To specify change: 105 to 106 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.105 Series Bulletin I27133 rev. I 09/04 Maximum Allowable Cas T e emperature (°C) IR K.105.. S eries R thJC (DC) = 0.27 K/ W Maximum Allowable Case T emperature (°C) 130 120 110 130 120 110 IR K.105.. S eries R (DC) = 0.27 K/ W thJC Conduction Angle Conduction Period 100 90 80 70 100 90 80 70 30° 60° 30° 60° 90° 120° 0 20 40 60 180° DC 90° 120° 180° 0 20 40 60 80 100 120 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 Conduction Angle Fig. 2 - Current Ratings Characteristics 200 180 160 140 120 180° 120° 90° 60° 30° R Limit MS Maximum Average On-state Power Loss (W) DC 180° 120° 90° 60° 30° MS 100 R Limit 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) IRK.105.. S eries Per Junction T J = 130°C Conduction Period 40 20 0 0 20 40 60 IRK.105.. S eries Per Junction TJ = 130°C 80 100 120 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100 Number Of Equa l Amplitud e Half Cycle Current Pulses (N) Fig. 4 - On-state Power Loss Characteristics 1800 1600 1400 1200 1000 800 Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine At Any Rated Loa d Condition And With Rated VRRM Ap plied Following S urge. Initial TJ= 130°C @60 Hz 0.0083 s @50 Hz 0.0100 s Maximum Non Repetitive S urge Current Versus Pulse T in Duration. Control ra Of Conduc tion May Not Be Maintained. Initial T = 130°C J No Volta ge Reapp lied Rated VRRMReapp lied IRK.105.. S eries Per Junction IR K.105.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1 600 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.105 Series Bulletin I27133 rev. I 09/04 350 Maximum T l On-state Power Loss (W) ota R th 300 = SA 250 200 150 Conduction Angle 180° 120° 90° 60° 30° 0. 3 0.5 K/ W 0. 7 100 50 0 IRK.105.. S eries Per Mod ule TJ = 130°C K/ W 1K /W 2 K/W 2 0. 1 0. K/ W W K/ W K/ ta el -D R 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 T otal RMS Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 7 - On-state Power Loss Characteristics 600 Rt Maximum T otal Power Loss (W) 500 400 300 200 100 0 180° (S ine) 180° (Rec t) 0. 2K /W 0. 3 K/ W A hS = 1 0. W K/ ta el -D R 0. 5 2 x IR K.105.. S eries S ingle Phase Bridge Connec ted TJ = 130°C 0 40 80 120 160 K/ W 0.7 K/ W 1KW / 2 K/ W 200 0 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 8 - On-state Power Loss Characteristics 900 Maximum T otal Power Loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 160 200 240 280 0 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (°C) 3 x IR K.105.. S eries T hree Phase Bridge Connec ted TJ = 130°C 120° (R ect) 0.2 K/ W 0.3 K/ W 0.5 1 K/ R SA th = 0. 1 K/ W -D el ta R K/ W W Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.105 Series Bulletin I27133 rev. I 09/04 1000 Instantaneous On-state Current (A) 100 TJ= 25°C 10 TJ= 130°C IR K.105.. S eries Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics Ma ximum Reverse Recovery Charge - Qrr (µC) Maximum R everse Recovery Current - Irr (A) 700 600 500 50 A 140 120 100 80 60 40 20 10 IR K.105.. S eries T = 125 °C J I T = 200 A M 100 A 50 A 20 A 10 A IRK.105.. S eries TJ= 125 °C I T = 200 A M 100 A 400 300 200 100 10 20 A 10 A 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs ) R ate Of Fall Of F orward Current - di/ dt (A/ µs) Fig. 11 - Recovery Charge Characteristics 1 S teady S tate Value: R thJC = 0.27 K/ W (DC Operation) Fig. 12 - Recovery Current Characteristics T ransient T hermal Impedanc e Z thJC (K/W) 0.1 IR K.105.. S eries Per Junc tion 0.01 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 13 - Thermal Impedance Z thJC Characteristics www.irf.com 7 IRK.105 Series Bulletin I27133 rev. I 09/04 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)R ommended load line for ec rated di/ dt: 20 V, 20 ohms tr = 0.5 µs tp >= 6 µs , b)R ommended load line for ec = 6 µs 10 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) T = -40 °C J (b ) T = 25 °C J T = 125 °C J 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) IRK.105.. S eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 14- Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/04 8 www.irf.com