IRK.F200

Bulletin I27099 rev. C 03/01 IRK.F200.. SERIES FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR MAGN-A-pak Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS i solating voltage Industrial standard package UL E78996 approved 200 A Description These series of MAGN-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 IRK.F200.. 200 85 444 Units A °C A A A KA 2s KA 2s KA 2√s µs µs V o @ 50Hz @ 60Hz 7600 8000 290 265 2900 20 and 25 2 up to 1200 - 40 to 125 It @ 50Hz @ 60Hz I2√t tq t rr VDRM / VRRM TJ range C www.irf.com 1 IRK.F200.. Series Bulletin I27099 rev. C 03/01 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 08 IRK.F20012 VRRM/VDRM, maximum repetitive peak reverse voltage V 800 1200 VRSM , maximum nonrepetitive peak rev. voltage V 800 1200 IRRM/I DRM max. @ T J = 125°C mA 50 Current Carrying Capacity ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 85 10Ω /0.47µF 380 460 310 250 180 50 80%VDRM 50 60 85 10Ω /0.47µF 560 690 450 360 280 50 o Frequency f ITM 180 el o ITM 100µs Units 630 710 530 410 300 50 850 1060 760 560 410 50 2460 1570 630 410 50 80%VDRM 3180 2080 860 560 50 A A A A A V V A/ µs °C 80%VDRM 60 85 10Ω /0.47µF 60 On-state Conduction Parameter IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current IRK.F200.. 200 85 444 7600 8000 6400 6700 Units Conditions A °C A A as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave I2t Maximum I2 t for fusing 290 265 205 187 I2 √t Maximum I2 √t for fusing 2900 1.18 1.25 0.74 0.70 1.73 600 1000 KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6 Ω, Ig = 1A VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current 2 www.irf.com IRK.F200.. Series Bulletin I27099 rev. C 03/01 Switching Parameter di/dt Maximum non-repetitive rate of rise IRK.F200.. 800 Units Conditions A/µs Gate drive 20V, 20 Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 750A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM trr tq Maximum recovery time Maximum turn-off time K 20 2 J 25 µs Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 50 V mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied IRK.F200.. 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM Triggering Parameter P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger IRK.F200.. 60 10 10 5 200 3 20 0.25 Units Conditions W W A V mA V mA V TJ = 125°C, rated VDRM applied TJ = 25°C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms Thermal and Mechanical Specifications Parameter TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case R thC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% MAP to heatsink busbar to MAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.025 K/W Mounting surface flat and greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound IRK.F200.. - 40 to 125 - 40 to 150 0.125 Units Conditions °C K/W Per junction, DC operation www.irf.com 3 IRK.F200.. Series Bulletin I27099 rev. C 03/01 ∆RthJC Conduction Conduction angle 180° 120° 90° 60° 30° (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction 0.009 0.010 0.014 0.020 0.032 0.006 0.011 0.015 0.020 0.033 Units K/W Conditions T J = 125°C Ordering Information Table Device Code IRK 1 T 2 F 3 200 4 - 12 5 H 6 K 7 1 2 3 4 5 6 7 - Module type - Circuit configuration - Fast SCR - Current rating: IT(AV) x 10 rounded - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H ≤ 400V/µs - tq code: K ≤ 20µs J ≤ 25µs NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F200.. Series Bulletin I27099 rev. C 03/01 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF.. M a xim um A llo w ab le C ase Te m pe rature ( C ) M ax im um Allo w ab le C a se Tem p erature ( C ) 130 120 110 100 90 IR K.F200.. Series R thJC (D C ) = 0.12 5 K/W 130 120 110 100 90 30 80 70 60 0 50 IR K .F2 00.. Serie s R thJC (D C ) = 0.12 5 K/W C o nd uc tio n A ng le C o nd uctio n P erio d 30 80 70 60 0 40 80 120 160 200 240 A vera ge O n-sta te C urrent (A ) 60 90 120 180 60 90 12 0 180 100 150 200 250 DC 300 350 A verag e On -state C urren t (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F200.. Series Bulletin I27099 rev. C 03/01 M a xim um Ave rag e O n-st at e P ow er Lo ss (W ) M axim um Av e ra ge On -state P ow er Lo ss (W ) 350 300 250 200 RM S Lim it 150 100 50 0 0 40 80 120 160 200 A vera ge O n -sta te C urre n t (A) C o n d u ction A n g le 500 450 400 350 300 250 200 RM S Lim it 150 100 50 0 0 50 100 150 200 250 300 350 Avera ge O n-sta te C urre nt (A) C o nd uctio n P erio d 180 120 90 60 30 DC 180 120 90 60 30 IRK.F20 0.. Series Per Ju nction T J = 1 25 C IR K.F2 00.. Series Per Ju nction T J = 1 25 C Fig. 3 - On-state Power Loss Characteristics 7000 8000 Fig. 4 - On-state Power Loss Characteristics Pea k H alf Sine W a ve O n-sta te C ur ren t (A) 6000 At Any Ra ted Loa d C ond ition And W ith Ra ted VRR M Ap plied Follow ing Surge. In itia l T J = 125 C @ 60 Hz 0.008 3 s @ 50 Hz 0.010 0 s Peak H alf Sine W ave O n -sta te Curren t (A) 7000 6000 M a xim um N on Rep etitiv e Surge C urrent V ersus Pulse Tra in D ura tio n. Co ntro l O f C o nduction May Not Be Maintained. In itial TJ = 125 C No V o lta ge Re a p p lie d Ra te d V RR M R e a pp lie d 5000 5000 4000 IRK.F20 0.. Series Pe r Jun ctio n 3000 1 10 100 Nu m b er O f E qu a l Am plitu d e Half C yc le C u rre nt Pu lse s (N) 4000 IRK.F200.. Series Pe r Jun ctio n 3000 0.01 0.1 Pu ls e Train D uration (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantan e ous O n -state C urre nt (A) Fig. 6 - Maximum Non-Repetitive Surge Current 1 Steady State Valu e: R thJC = 0.1 25 K/W (D C O pera tio n) 0.1 1000 T J= 25 C T J = 12 5 C IR K.F200 .. Series P er Jun c tio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V o lta g e (V ) Tran sient The rm al Im pedance Z thJC (K/W ) 0.01 IR K.F200.. Series Per Jun ctio n 0.001 0.001 0.01 0.1 1 10 100 Square W a ve Pulse D uration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 6 www.irf.com IRK.F200.. Series Bulletin I27099 rev. C 03/01 M a xim u m Re verse Rec ove ry C ha rg e - Q rr ( C ) M axim um Re verse Re c overy C urre n t - Irr (A ) 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Ra te O f Fall O f Fo rw ard C urre nt - d i/dt (A / s) IRK .F200.. Serie s T J = 125 C I TM = 1000 A 500 A 300 A 200 A 100 A 180 I TM = 1 000A 5 00A 3 00A 2 00A 1 00A 150 120 90 60 IRK.F200.. Se ries T J = 125 C 10 20 30 40 50 60 70 80 90 100 30 Rate O f Fa ll O f Forw ard C urren t - d i/dt (A / s) Fig. 9 - Reverse Recovery Charge Characteristics 1E4 Fig. 10 - Reverse Recovery Current Characteristics Peak O n-stata C urrent (A) 50 H z 1 50 40 0 50 H z 150 40 0 1 00 0 2 50 0 5000 1E3 2 50 0 5 00 0 1 00 0 1E2 IRK.F200.. Series Sinuso id a l p ulse T C = 85 C Snub b er c ircuit R s = 10 o hm s C s = 0.47 F V D = 80% V D R M IRK .F200.. Series Sinuso id a l p ulse T C = 60 C Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M tp 1E1 1E1 tp 1E2 1E3 1E4 E1 1E4 1E1 1E2 1E3 1E4 Pulse Base w idth ( s) Pu lse Base w id th ( s) Fig. 11 - Frequency Characteristics 1E4 IRK.F200.. Series Tra p ezo id a l p ulse T C= 85 C d i/d t 5 0A/ s IRK .F2 00.. Se rie s Tra p ezoid a l p ulse T C= 85 C d i/d t 100A/ s Pea k O n -state C urren t (A ) tp tp 50 H z 150 50 H z 150 400 1 00 0 2 50 0 1E3 1 00 0 2 50 0 5 00 0 40 0 Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M 5000 1E2 1E1 Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M 1E2 1E3 1E4 1E1 1E4 E1 1E2 1E3 1E4 Pulse Base w idth ( s) Pu lse Base w idth ( s) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F200.. Series Bulletin I27099 rev. C 03/01 1E4 Pea k O n -state C urren t (A ) 50 H z 150 400 40 0 1000 2 50 0 5000 150 50 H z 1E3 2 50 0 5 00 0 1 00 0 tp 1E2 1E1 I RK.F 200.. Series Tra p ezoid a l p ulse T C= 60 C d i/d t 50A/ s Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M tp I RK .F200.. Series Tra pezo id a l p ulse T C= 60 C di/d t 100A/ s Snub b e r c irc uit R s = 10 ohm s C s = 0.4 7 F V D = 80% V D R M 1E2 1E3 1E4 1E1 1E4 E1 1E2 1E3 1E4 Pulse Base w idth ( s) Pulse Base w idth ( s) Fig. 13 - Frequency Characteristics 1E4 10 jou les per p u lse 5 10 jou les p er p ulse 5 2 .5 1 0 .5 0 .2 5 0 .1 0 .05 Pea k O n -state C urre n t (A ) 2 .5 1 1E3 0 .0 5 0 .5 0 .2 5 0 .1 1E2 tp I RK .F200.. Se ries S inusoid a l p ulse I RK .F200.. Series Tra p ezoid a l p ulse d i/d t 50A / s tp 1E1 1E1 1E2 1E3 1E4 E1 1E4 1E1 1E2 1E3 1E4 Pulse Base w id th ( s) Pulse Base w idth ( s) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Instantane ous G ate V oltage (V) R ectan g u la r g a te pu lse a ) Reco m m en d ed lo a d lin e fo r r a ted d i/d t : 1 0V , 10 o h m s b ) R eco m m end ed lo a d lin e fo r < = 30% ra ted d i/d t : 1 0V , 20 o h m s (a ) (b ) Tj=25 C Tj=125 C T j=- 40 C (1) (2) (3) (4) PG M PG M PG M PG M = = = = 8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s 10 1 VG D IG D 0.1 0.01 0.1 (1) (2) (3 ) (4) IRK.F200.. Series 1 Frequenc y Lim ite d by PG (AV ) 10 100 In sta n ta n eo u s G ate C u rrent (A ) Fig. 15 - Gate Characteristics 8 www.irf.com