IRKF132

Bulletin I27092 rev. A 09/97 IRK.F132.. SERIES FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-pakä Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS i solating voltage Industrial standard package UL E78996 approved 130 A Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It 2 IRK.F132.. 130 90 293 3210 3360 51.5 47.0 515 15 2 up to 800 - 40 to 125 Units A °C A A A KA 2s KA 2s KA 2√ s µs µs V o @ 50Hz @ 60Hz I 2√ t tq t rr VDRM / V RRM TJ range C www.irf.com 1 IRK.F132.. Series Bulletin I27092 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 IRK.F132.. 08 VRRM/VDRM, maximum repetitive peak reverse voltage V 400 800 VRSM , maximum nonrepetitive peak rev. voltage V 400 800 IRRM/I DRM max. @ T J = 125°C mA 30 Current Carrying Capacity ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 250 320 240 210 160 50 80% VDRM 50 60 90 420 530 390 340 275 50 o Frequency f ITM 180 el o ITM 100µs Units 408 485 400 340 300 50 640 800 650 530 415 50 2465 1470 540 340 50 3460 2150 830 530 50 A A A A A V V 80% VDRM 60 90 80% VDRM 60 A/µ s °C 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF On-state Conduction Parameter IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS current ITSM Maximum peak, one-cycle, non-repetitive surge current IRK.F132.. 130 90 293 3210 3360 2700 2825 Units Conditions A °C A A TC = 90°C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave I2t Maximum I2 t for fusing 51.5 47.0 36.5 33.3 I2 √t Maximum I2√ t for fusing 515 1.16 1.25 0.92 0.77 1.71 600 1000 KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6Ω , Ig = 1A VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current 2 www.irf.com IRK.F132.. Series Bulletin I27092 rev. A 09/97 Switching Parameter di/dt Maximum non-repetitive rate of rise IRK.F132.. 800 Units Conditions A/µs Gate drive 20V, 20 Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM trr tq Maximum recovery time Maximum turn-off time 2 L 15 µs Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied IRK.F132.. 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM Triggering Parameter P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger IRK.F132.. 60 10 10 5 200 3 20 0.25 Units Conditions W W A V mA V mA V TJ = 125°C, rated VDRM applied TJ = 25°C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms Thermal and Mechanical Specifications Parameter TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound IRK.F132.. - 40 to 125 - 40 to 150 0.17 Units Conditions °C K/W Per junction, DC operation www.irf.com 3 IRK.F132.. Series Bulletin I27092 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction 0.016 0.019 0.024 0.035 0.060 0.011 0.020 0.026 0.037 0.060 Units K/W Conditions TJ = 125°C Ordering Information Table Device Code IRK 1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR T 2 F 3 13 4 2 5 - 08 6 H 7 L 8 N 8 - Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws 6 7 8 9 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H ≤ 400V/µs - tq code: L ≤ 15µs - None = Standard devices N = Aluminum nitrade substrate NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F132.. Series Bulletin I27092 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types IRK...1 IRK...2 A 25 (0.98) 23 (0.91) B ---30 (1.18) C ---36 (1.42) D 41 (1.61) ---- E 47 (1.85) ---- IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF.. Maximum Allowable Case Temperature ( °C) Maximum Allowable Case Temperature (°C) 130 120 110 Conduction Angle 130 120 110 Conduction Period IRK.F132.. Series R thJC (DC) = 0.17 K/W IRK.F132.. Series R thJC (DC) = 0.17 K/W 100 90 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) 100 90 80 70 0 25 50 75 100 125 150 175 200 225 Average On-state Current (A) 30° 60° 90° 120° 180° DC 30° 60° 90° 120° 180° Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F132.. Series Bulletin I27092 rev. A 09/97 Maximum Average On-state Power Loss (W) 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 1 40 Average On-state Current (A) RMS Limit Conduction Angle 180° 120° 90° 60° 30° Maximum Average On-state Power Loss (W) 300 250 200 150 RMS Limit 100 50 0 0 40 80 120 160 200 240 Average On-state Current (A) Conduction Period DC 180° 120° 90° 60° 30° IRK.F132.. Series Per Junction T J = 125 °C IRK.F132.. Series Per Junction T J = 125°C Fig. 3 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Fig. 4 - On-state Power Loss Characteristics 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 IRK.F132.. Series Per Junction 0.1 Pulse Train Duration (s) 1 Peak Half Sine Wave On-state Current (A) 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Contro l Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRM Reapplied IRK.F132.. Series Per Junction 10 100 1200 0.01 Number Of Equal Amplitude Half Cyc le Curre nt Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current 1 Steady State Value R thJC = 0.17 K/W (DC Operation) 0.1 1000 T J = 25°C T J = 125°C 100 Transient Thermal Impedance Z thJC (K/W) 0.01 IRK.F132.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 IRK.F132.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic 6 www.irf.com IRK.F132.. Series Bulletin I27092 rev. A 09/97 Maximum Reverse Recovery Charge - Qrr (µC) 250 IRK.F132.. Series T J = 125 °C I TM = 500 A 300 A 200 A Maximum Reverse Recovery Current - Irr (A) 150 IRK.F132.. Series T J = 125 °C I TM = 500 A 300 A 200 A 100 A 50 A 200 120 150 100 A 90 100 50 A 60 50 30 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/µs) 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristics 1E4 IRK.F132.. Series Sinusoidal Pulse T C = 90 °C Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) tp 50 Hz 150 400 1000 2500 5000 50 Hz 150 1E3 2500 5000 400 1000 tp IRK.F132.. Series Sinusoidal Pulse T C = 60 °C Snubber c ir cuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM 1E2 1E1 1E2 1E3 1E 1E1 1E4 4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 1E4 IRK.F132.. Series Trapezoidal Pulse T C = 90°C, di/dt 50A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 90°C, di/dt 100A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM Peak On-state Current (A) tp tp 50 Hz 1E3 400 1000 150 400 1000 2500 5000 150 50 Hz 2500 5000 1E2 1E1 1E2 1E3 1E4 4 E1 1E 1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F132.. Series Bulletin I27092 rev. A 09/97 1E4 IRK.F132.. Series Trapezoidal Pulse T C = 60°C, di/dt 50A/µs Snubber circuit R s = 47 ohms C s = 0.22 µ F V D = 80% V DRM IRK.F132.. Series Trapezoidal Pulse T C = 60°C, di/dt 100A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM Peak On-state Current (A) tp tp 50 Hz 1E3 2500 5000 1000 400 150 1000 2500 5000 150 400 50 Hz 1E2 1E1 1E2 1E3 1E4 41E1 1E 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 10 joules per pulse 10 joules per pulse 5 1 0.5 0.25 0.1 0.05 2.5 Peak On-state Current (A) 5 0.5 1 2.5 1E3 0.1 0.05 0.25 1E2 IRK.F132.. Series Sinusoidal pulse tp IRK.F132..Series Trapezoidal Pulse di/dt 50A/µs tp 1E1 1E1 1E2 1E3 1E 1E1 1E4 41E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr