IRKF180

Bulletin I27100 rev. C 03/01 IRK.F180.. SERIES FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR MAGN-A-pak Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS i solating voltage Industrial standard package UL E78996 approved 180 A Description These series of MAGN-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 IRK.F180.. 180 85 400 Units A °C A A A KA 2s KA 2s KA 2√s µs µs V o @ 50Hz @ 60Hz 7130 7470 255 232 2550 20 and 25 2 up to 1200 - 40 to 125 It @ 50Hz @ 60Hz I 2√ t tq trr VDRM / V RRM TJ range C www.irf.com 1 IRK.F180.. Series Bulletin I27100 rev. C 03/01 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 08 IRK.F18012 VRRM/VDRM, maximum repetitive peak reverse voltage V 800 1200 VRSM , maximum nonrepetitive peak rev. voltage V 800 1200 IRRM/I DRM max. @ T J = 125°C mA 50 Current Carrying Capacity ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 85 10Ω /0.47µF 370 435 290 240 170 50 80%VDRM 50 60 85 10Ω /0.47µF 530 650 430 345 270 50 o Frequency f ITM 180 el o ITM 100µs Units 565 670 490 390 290 50 800 1000 720 540 390 50 2400 1540 610 390 50 80%VDRM 3150 2050 830 540 50 A A A A A V V A/ µs °C 80%VDRM 60 85 10Ω /0.47µF 60 On-state Conduction Parameter IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current IRK.F180.. 180 85 400 7130 7470 6000 6280 Units Conditions A °C A A as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave I2t Maximum I2 t for fusing 255 232 180 164 I2 √t Maximum I2 √t for fusing 2550 1.30 1.38 0.90 0.71 1.84 600 1000 KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6 Ω, Ig = 1A VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current 2 www.irf.com IRK.F180.. Series Bulletin I27100 rev. C 03/01 Switching Parameter di/dt Maximum non-repetitive rate of rise IRK.F180.. 800 Units Conditions A/µs Gate drive 20V, 20 Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 750A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM trr tq Maximum recovery time Maximum turn-off time K 20 2 J 25 µs Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 50 V mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied IRK.F180.. 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM Triggering Parameter P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger IRK.F180.. 60 10 10 5 200 3 20 0.25 Units Conditions W W A V mA V mA V TJ = 125°C, rated VDRM applied TJ = 25°C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms Thermal and Mechanical Specifications Parameter TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case R thC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% MAP to heatsink busbar to MAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.02 K/W Mounting surface flat and greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound IRK.F180.. - 40 to 125 - 40 to 150 0.125 Units Conditions °C K/W Per junction, DC operation www.irf.com 3 IRK.F180.. Series Bulletin I27100 rev. C 03/01 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction 0.009 0.010 0.014 0.020 0.032 0.006 0.011 0.015 0.020 0.033 Units K/W Conditions TJ = 125°C Ordering Information Table Device Code IRK 1 T 2 F 3 180 4 - 12 5 H 6 K 7 1 2 3 4 5 6 7 - Module type - Circuit configuration - Fast SCR - Current rating: IT(AV) x 10 rounded - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H ≤ 400V/µs - tq code: K ≤ 20µs J ≤ 25µs NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F180.. Series Bulletin I27100 rev. C 03/01 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF.. M a xim um A llo w a ble C ase Tem pera ture ( C ) 120 110 100 90 IR K.F180.. Series R thJC (D C ) = 0.12 5 K/W M ax im um Allow a ble C ase Tem pera ture ( C ) 130 130 120 110 100 90 80 70 60 0 50 IR K.F1 8 0 .. Se ries R thJC (D C ) = 0 .1 2 5 K /W C o n d u ctio n A n g le C o n d u c tio n Pe rio d 30 80 70 60 0 40 80 120 160 200 Averag e O n -state C urren t (A ) 60 90 120 180 30 60 90 120 1 80 100 150 200 DC 250 300 Averag e O n-state C urren t (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F180.. Series Bulletin I27100 rev. C 03/01 M axim um Ave rag e O n -state Pow er Lo ss (W ) M axim um Av erag e O n-state Po w e r Loss (W ) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 A ve ra g e O n-sta te C urre n t (A) RM S Lim it C ond uctio n An gle 450 400 350 300 250 200 RM S Lim it 150 100 50 0 0 50 100 150 200 250 300 A verag e O n-sta te C urre n t (A ) C on d u c tio n Pe riod 1 80 1 20 90 60 30 DC 180 120 90 60 30 IRK.F1 80 .. Series Per Ju n ction T J = 1 25 C IRK.F18 0.. Series Per Junction T J = 12 5 C Fig. 3 - On-state Power Loss Characteristics 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100 Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N) Fig. 4 - On-state Power Loss Characteristics 7500 7000 6500 6000 5500 5000 4500 4000 3500 3000 IRK.F180.. Series Pe r Jun ctio n 0.1 Pu ls e Train D uration (s) 1 M a xim um No n Rep etitiv e Surg e C urrent V ers us Pulse Tra in D ura tio n . C ontro l O f C o nduction May Not Be Maintained. In itial T J = 125 C N o V o lta g e R e a p p lie d Ra te d V RR MR e a pp lie d Pea k Ha lf Sine W a ve O n -state C urren t (A) A t A ny Rate d Loa d C o nd itio n A nd W ith Rate d V R RM A p plie d Fo llo w ing Surg e . In itial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s IRK.F18 0.. S eries Pe r Jun ctio n Pe a k H alf Sin e W av e O n-state C urre n t (A ) 2500 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instan ta neous O n -state C urren t (A ) Fig. 6 - Maximum Non-Repetitive Surge Current 1 Ste a dy Sta te V a lue: R thJ C = 0.125 K/W (D C O p eratio n) 0.1 1000 T J = 25 C T J = 12 5 C IR K.F1 80.. Series Per Ju n ctio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V olta g e (V ) T ransient Therm al Im pedanc e Z thJC (K/W ) 0.01 IRK.F180 .. Series Per Junctio n 0.001 0.001 0.01 0.1 1 10 100 Sq u are W a ve Pulse D ura tio n (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 6 www.irf.com IRK.F180.. Series Bulletin I27100 rev. C 03/01 M axim u m Re verse Rec ove ry C h arg e - Q rr ( C ) M axim um Re verse Rec o very C urre nt - Irr (A) 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/ s) IRK.F 180.. Se ries T J = 125 C I TM = 1000 A 500 A 300 A 200 A 100 A 180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/ s) IRK.F180.. Series T J = 125 C I TM = 1000A 5 00A 3 00A 2 00A 1 00A Fig. 9 - Reverse Recovery Charge Characteristics 1E4 Fig. 10 - Reverse Recovery Current Characteristics P eak On-state C urre nt ( A) 50 H z 150 150 40 0 1000 2 50 0 5 00 0 50 H z 1E3 2 50 0 5 00 0 1000 400 1E2 IRK .F180.. Serie s Sinuso id a l p ulse T C= 85 C Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M I RK .F 180.. Series S inusoid a l pulse T C= 6 0 C Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D RM tp 1E1 1E1 tp 1E2 1E3 1E4 1E1 1E4 1E1 1E2 1E3 1E4 Pulse Ba sewid th ( s) Pulse Ba sewid th ( s) Fig. 11 - Frequency Characteristics 1E4 Pea k On -sta te C urrent (A ) 50 H z 1E3 1 00 0 2 50 0 5000 150 40 0 1 00 0 2 50 0 5 00 0 50 H z 150 400 1E2 IRK .F180.. Series Tra p ezo id a l p ulse T C = 8 5 C d i/d t 50A/ s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F180.. Series Tra p ezoid a l p ulse T C = 8 5 C d i/d t 100A/ s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D= 80% V D RM tp 1E1 1E1 tp 1E4 E1 1E4 1E1 1E2 1E3 1E2 1E3 1E4 Pulse Base w id th ( s) Pulse Base w idth ( s) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F180.. Series Bulletin I27100 rev. C 03/01 1E4 P eak O n -sta te C urren t (A ) 50 H z 1 50 150 400 1 00 0 2 50 0 5000 50 H z 1E3 2 50 0 5 00 0 40 0 1 00 0 1E2 IRK .F1 80.. Se rie s T ra p ezoid a l p ulse T C = 6 0 C d i/d t 50A/ s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F 180.. Series T ra p ezoid a l p ulse T C = 6 0 C d i/d t 100A/ s S nub b e r circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M tp 1E1 1E1 tp 1E2 1E3 1E4 E1 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth ( s) Pulse Ba se w idth ( s) Fig. 13 - Frequency Characteristics 1E4 10 jou les p er p u lse 5 2 .5 10 jou les p er p ulse 5 2 .5 1 0 .5 0 .25 0 .1 0 .0 5 P ea k O n -state C urre n t ( A) 1 0 .5 1E3 0 .1 0 .0 5 0 .2 5 1E2 IRK.F 180.. Series Sinuso id a l p ulse I RK.F180.. Series Tra p ezo id a l p ulse d i/d t 50A / s tp 1E1 1E1 tp 1E2 1E3 1E4 1E1 1E4 E1 1E2 1E3 1E4 Pulse Base w id th ( s) Pulse Ba se w idth ( s) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Instantaneo us G ate Voltage (V) Recta n g u lar g a te p u lse a ) R eco m m en d ed lo a d lin e fo r r a ted d i/d t : 1 0V , 1 0o hm s b ) Reco m m en d ed lo a d line fo r < = 3 0% ra ted d i/d t : 1 0V , 20 o h m s 10 (a ) (b ) Tj=25 C Tj=125 C Tj=-40 C (1) (2) (3) (4) PG M PG M PG M PG M = = = = 8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s 1 (1) (2) (3) (4) VGD IG D 0.1 0.01 0.1 IRK.F180.. Serie s 1 Instantaneo us G ate C urre nt (A) Fre que ncy Lim ite d by PG (AV) 10 100 Fig. 15 - Gate Characteristics 8 www.irf.com