IRKT26

Bulletin I27130 rev. G 10/02 IRK.26 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 27 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IT(AV) or IF(AV) @ 85°C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It 2 IRK.26 27 60 400 420 800 730 8000 400 to 1600 - 40 to 125 - 40 to125 Units A A A A A2s A2s A 2√ s V o o @ 50Hz @ 60Hz I 2√ t VRRM range TSTG TJ (*) As AC switch. C C www.irf.com 1 IRK.26 Series Bulletin I27130 rev. G 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.26 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 IRRM IDRM 125°C mA 15 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 60 A 400 420 335 350 470 490 I2t Max. I2t for fusing 800 730 560 510 1100 1000 I2√t Max. I2√ t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/µs 1.95 V 8000 0.92 0.95 12.11 11.82 A2√s V mΩ As 2 IRK.26 27 27 Units Conditions 180o conduction, half sine wave, TC = 85oC I(RMS) t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms reapplied or I(RMS) Sinusoidal half wave, Initial TJ = TJ max. No voltage 100% VRRM reapplied TJ = 25oC, no voltage reapplied No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied Initial TJ = TJ max. t= 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = 25oC, from 0.67 VDRM, ITM =π x I T(AV), I = 500mA, g VT(TO) Max. value of threshold TJ = TJ max TJ = TJ max TJ = 25oC tr < 0.5 µs, tp > 6 µs TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x π x IAV < I < π x IAV (1) I2t for time tx = I2√t x √tx (4) I > π x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.26 Series Bulletin I27130 rev. G 10/02 Triggering Parameters PGM IGM Max. peak gate power IRK. 26 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C o Anode supply = 6V resistive load Anode supply = 6V resistive load mA V mA TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) 3500 (1 sec) dv/dt Max. critical rate of rise 500 V/µs V 50 Hz, circuit to base, all terminals shorted TJ = 125oC, linear to 0.67 VDRM, 15 mA TJ = 125oC, gate open circuit IRK. 26 Units Conditions (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range IRK.26 - 40 to 125 - 40 to 125 Units Conditions °C RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar wt Approximate weight Case style 0.1 5 Nm 3 110 (4) TO-240AA gr (oz) JEDEC 0.31 K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Per module, DC operation ∆R Conduction (per Junction) Devices IRK.26 (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction 180o 0.23 120o 0.27 90o 0.34 60o 0.48 30o 0.73 180o 0.17 Rect. wave conduction 120o 0.28 90o 0.36 60o 0.49 30o 0.73 Units °C/W www.irf.com 3 IRK.26 Series Bulletin I27130 rev. G 10/02 Ordering Information Table Device Code IRK.27 types With no auxiliary cathode IRK 1 1 2 3 4 5 6 - T 2 26 3 / 16 4 A 5 S90 6 Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs e.g. : IRKT27/16A etc. * * Available with no auxiliary cathode. To specify change: 26 to 27 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.26 Series Bulletin I27130 rev. G 10/02 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 IRK.26.. Series R thJC (DC) = 0.62 K/W 130 IRK.26.. Series R thJC (DC) = 0.62 K/W 120 120 110 Conduction Angle 110 Conduction Period 100 30° 100 30° 60° 90° 120° 180° DC 40 50 60° 90° 90 120° 180° 90 80 0 5 10 15 20 25 30 80 0 10 20 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 40 180° 120° 90° 60° 30° RMS Limit Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 50 70 60 50 40 30 20 10 0 30 DC 180° 120° 90° 60° 30° RMS Limit 20 Conduction Angle Conduction Period 10 IRK.26.. Series Per Junction T J = 125°C 0 5 10 15 20 25 30 IRK.26.. Series Per Junction T J = 125°C 0 10 20 30 40 50 0 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 400 400 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 350 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) 350 300 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 250 250 200 IRK.26.. Series Per Junction 150 1 10 100 200 IRK.26.. Series Per Junction 150 0.01 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.26 Series Bulletin I27130 rev. G 10/02 100 Maximum Total On-state Power Loss (W) 90 80 70 60 50 40 30 20 10 0 0 10 20 30 Conduction Angle 180° 120° 90° 60° 30° R thSA 0 .3 0.5 W K/ 0. 7 K/ K/ W 1 W K/ = 0.1 W K /W 1. 5 K/ W lta - De 2K /W R 3K /W 4 K/ W IRK.26.. Series Per Module T J = 125°C 40 50 8 K/W 0 60 20 40 60 80 100 120 140 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-state Power Loss Characteristics 250 SA R th 0.2 3 0. Maximum Total Power Loss (W) K/ W K .1 =0 K/ 200 0. 5 W /W 150 100 180° (Sine) 180° (Rect) K/ K/ W -D a el t 0.7 1K R W /W 50 0 2 x IRK.26.. Series Single Phase Bridge Connected T J = 125°C 0 10 20 30 40 50 1.5 K/W 3 K/W 8 K/W 0 60 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-state Power Loss Characteristics 350 S R th Maximum Total Power Loss (W) 300 0. 3 2 0. W K/ K/ W A =0 .1 250 200 150 100 50 0 3 x IRK.26.. Series Three Phase Bridge Connected TJ = 125°C 0 10 20 30 40 50 60 70 120° (Rect) W K/ 0. 4 0. 5 0. 7 elt -D K/ W a K/ W K/W R 1 K/ W 1.5 K /W 3 K/ W 0 80 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.26 Series Bulletin I27130 rev. G 10/02 1000 Instantaneous On-state Current (A) 100 T J = 25°C 10 T J = 125°C IRK.26.. Series Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value: R thJC = 0.62 K/W (DC Operation) 0.1 IRK.26.. Series 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) TJ = -40 °C TJ = 25 °C (b) TJ = 125 °C 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) IRK.26.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 12- Gate Characteristics www.irf.com 7 IRK.26 Series Bulletin I27130 rev. G 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 8 www.irf.com