IRKT9116AS90

Bulletin I27132 rev. H 10/02 IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 75 A 95 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IT(AV) or IF(AV) @ 85°C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It 2 IRK.71 75 165 1665 1740 13.86 12.56 138.6 IRK.91 95 210 1785 1870 15.91 14.52 159.1 Units A A A A KA 2s KA2s KA 2√s V o @ 50Hz @ 60Hz I √t V RRM range TSTG TJ (*) As AC switch. 2 400 to 1600 - 40 to 125 - 40 to125 C C o www.irf.com 1 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.71/ .91 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V 400 600 800 1000 1200 1400 1600 IRRM IDRM 125°C mA V 500 700 900 1100 1300 1500 1700 V 400 600 800 1000 1200 1400 1600 15 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 165 1665 1740 1400 1470 1850 1940 I2 t Max. I2t for fusing 13.86 12.56 9.80 8.96 17.11 15.60 I2√t Max. I2√t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/µs 1.59 1.58 V 138.6 0.82 0.85 3.00 2.90 210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 KA2√s V mΩ KA2s or 75 95 180o conduction, half sine wave, TC = 85oC IRK.71 IRK.91 Units Conditions I(RMS) t=8.3ms reapplied I(RMS) Sinusoidal half wave, Initial TJ = TJ max. t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t= 8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied Low level (3) High level (4) Low level High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = TJ max (3) TJ = TJ max TJ = 25°C Initial TJ = TJ max. VT(TO) Max. value of threshold TJ = 25oC, from 0.67 VDRM, ITM =π x IT(AV), I = 500mA, g tr < 0.5 µs, tp > 6 µs TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x π x IAV < I < π x IAV (1) I2t for time tx = I2√t x √tx (4) I > π x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Triggering Parameters PGM IGM Max. peak gate power IRK.71 12 3.0 3.0 10 4.0 2.5 1.7 270 150 80 IRK.91 12 3.0 3.0 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C Anode supply = 6V resistive load Anode supply = 6V resistive load mA VGD IGD 0.25 6 V mA TJ = 125oC, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM Max. peak reverse and off-state leakage current at VRRM, VDRM 2500 (1 min) VINS RMS isolation voltage 3500 (1 sec) 500 V/µs V shorted TJ = 125oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 15 mA TJ = 125 oC, gate open circuit IRK.71 IRK.91 Units Conditions dv/dt Max. critical rate of rise of off-state voltage (5) (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range IRK.71 IRK.91 Units Conditions - 40 to 125 °C - 40 to 125 RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar wt Approximate weight Case style 0.1 5 Nm 3 110 (4) TO-240AA gr (oz) JEDEC 0.165 0.135 K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Per module, DC operation ∆R Conduction (per Junction) Devices IRK.71 IRK.91 (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sine half wave conduction 180o 0.06 0.04 120o 0.07 0.05 90o 0.09 0.06 60o 0.12 0.08 30o 0.18 0.12 180o 0.04 0.03 Rect. wave conduction 120o 0.08 0.05 90o 0.10 0.06 60o 0.13 0.08 30o 0.18 0.12 Units °C/W www.irf.com 3 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Ordering Information Table Device Code IRK.92 types With no auxiliary cathode IRK 1 1 2 3 4 5 6 - T 2 91 3 / 16 4 A 5 S90 6 Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs e.g. : IRKT92/16A etc. * * Available with no auxiliary cathode. To specify change: 71 to 72 91 to 92 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 120 110 100 90 80 70 Conduction Angle IRK.71.. Series R thJC (DC) = 0.33 K/W 130 120 110 IRK.71.. Series R thJC (DC) = 0.33 K/W Conduction Period 100 90 30° 80 70 60° 90° 120° 60 30° 60° 90° 120° 180° 180° 80 DC 100 120 0 10 20 30 40 50 60 70 80 0 20 40 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 120 100 80 60 40 20 0 180° 120° 90° 60° 30° RMS Limit 140 120 100 80 60 40 20 0 Fig. 2 - Current Ratings Characteristics DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Conduction Angle IRK.71.. Series Per Junction T J = 125°C 0 10 20 30 40 50 60 70 80 IRK.71.. Series Per Junction T J = 125°C 0 20 40 60 80 100 120 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 IRK.71.. Series Per Junction 10 100 Fig. 4 - On-state Power Loss Characteristics 1800 1600 1400 1200 1000 800 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRMReapplied IRK.71.. Series Per Junction 0.1 Pulse Train Duration (s) 1 600 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 250 Maximum Total On-state Power Loss (W) 180° 120° 90° 60° 30° SA R th 0. 2 W K/ 3 0. 200 = W K/ 0. 4 0. 150 0. 5 0.7 K/ W /W 1K K/ ta el -D W K/ W R 100 Conduction Angle 1K /W 1 .5 50 IRK.71.. Series Per Module T J = 125°C 0 20 40 60 K/ W 3 K/W 0 0 80 100 120 140 160 180 20 40 60 80 100 120 140 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-state Power Loss Characteristics 600 Maximum Total Power Loss (W) 500 400 300 200 100 0 2 x IRK.71.. Series Single Phase Bridge Connected T J = 125°C 0 20 40 60 180° (Sine) 180° (Rect) h Rt SA = 1 0. W K/ 0. 2 0. 3 -D K/ W lta e R K/ W 0.5 K 1 K/ /W W 2 K/ W 80 100 120 140 160 180 0 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-state Power Loss Characteristics 800 Maximum Total Power Loss (W) 700 600 500 400 300 200 100 0 0 40 80 3 x IRK.71.. Series Three Phase Bridge Connected T J = 125°C 120 160 200 120° (Rect) 0.2 R SA th = 0. 1 K/ W K/ W -D el ta 0.3 R K/ W 0 .5 K/W 1 K/W 0 240 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. H 10/02 Maximum Allowable Case Temperature (°C) IRK.91.. Series R thJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (°C) 130 120 110 Conduction Angle 130 120 110 IRK.91.. Series R thJC (DC) = 0.27 K/W Conduction Period 100 90 80 70 100 90 80 70 30° 60° 90° 120° 180° 100 30° 60° 90° 120° DC 180° 0 20 40 60 80 0 20 40 60 80 100 120 140 160 Average On-state Current (A) Average On-state Current (A) Fig. 10 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 140 120 100 80 60 40 20 0 Conduction Angle Fig. 11 - Current Ratings Characteristics 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 Conduction Period 180° 120° 90° 60° 30° RMS Limit DC 180° 120° 90° 60° 30° RMS Limit IRK.91.. Series Per Junction T J = 125°C 0 20 40 60 80 100 IRK.91.. Series Per Junction T J = 125°C 100 120 140 160 Average On-state Current (A) Average On-state Current (A) Fig. 12 - On-state Power Loss Characteristics 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 IRK.91.. Series Per Junction 10 100 1800 1600 1400 1200 1000 800 Fig. 13 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125°C No Voltage Reapplied Rated VRRM Reapplied IRK.91.. Series Per Junction 0.1 Pulse Train Duration (s) 1 600 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current www.irf.com 7 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 350 Maximum Total On-state Power Loss (W) R th 300 250 200 180° 120° 90° 60° 30° 0. 2 SA 0. K/ W = 1 0. 3 W K/ K/ W K/ W a elt -D 0.5 R 150 100 50 0 Conduction Angle 0.7 K/ W IRK.91.. Series Per Module T J = 125°C 0 40 80 120 160 200 1K /W 1.5 K /W 3 K/W 0 240 20 40 60 80 100 120 140 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 16 - On-state Power Loss Characteristics 600 Maximum Total Power Loss (W) 500 400 300 200 100 0 2 x IRK.91.. Series Single Phase Bridge Connected T J = 125°C 0 40 80 120 160 180° (Sine) 180° (Rect) h Rt SA = 1 0. 0. 2 W K/ K/ W -D ta el 0.3 R K/ W 0 .5 K/ W 1 K/ W 2 K/ W 200 0 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-state Power Loss Characteristics 900 Maximum Total Power Loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 3 x IRK.91.. Series Three Phase Bridge Connected T J = 125°C 160 200 240 120° (Rect) R SA th = 0. 1 K/ W 0.2 K/ W -D el ta R 0.3 K/ W 0.5 K /W 1 K/W 280 0 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 18 - On-state Power Loss Characteristics 8 www.irf.com IRK.71, .91 Series Bulletin I27132 rev. H 10/02 1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A) 1000 100 100 T J= 25°C 10 T J= 125°C IRK.91.. Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 T J= 25°C 10 T J= 125°C IRK.71.. Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 19 - On-state Voltage Drop Characteristics Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Recovery Current - Irr (A) 700 600 500 50 A Fig. 20 - On-state Voltage Drop Characteristics 140 120 100 80 60 40 20 10 IRK.71.. Series IRK.91.. Series T J = 125 °C I TM = 200 A 100 A 50 A 20 A 10 A IRK.71.. Series IRK.91.. Series T J = 125 °C I TM = 200 A 100 A 400 300 200 100 10 20 A 10 A 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 21 - Recovery Charge Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value: R thJC = 0.33 K/W R thJC = 0.27 K/W (DC Operation) 0.1 IRK.71.. Series IRK.91.. Series Fig. 22 - Recovery Current Characteristics Per Junction 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 23 - Thermal Impedance ZthJC Characteristics www.irf.com 9 IRK.71, .91 Series Bulletin I27132 rev. H 10/02 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = -40 °C (b) TJ = 25 °C TJ = 125 °C 1 VGD IGD (4) (3) (2) (1) 0.1 0.001 IRK.71../.91.. Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 0.01 Instantaneous Gate Current (A) Fig. 24 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 10 www.irf.com