IRKTF111-08HN

Bulletin I27091 rev.A 09/97 IRK.F112.. SERIES FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-pakä Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS i solating voltage Industrial standard package UL E78996 approved 112 A Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It 2 IRK.F112.. 112 90 250 3090 3237 47.8 43.6 478 10 and 15 2 up to 800 - 40 to 125 Units A °C A A A KA 2s KA 2s KA 2√ s µs µs V o @ 50Hz @ 60Hz I 2√ t tq t rr VDRM / V RRM TJ range C www.irf.com 1 IRK.F112.. Series Bulletin I27091 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 08 VRRM/VDRM, maximum repetitive peak reverse voltage V 400 800 VRSM , maximum nonrepetitive peak rev. voltage V 400 800 IRRM/I DRM max. @ T J = 125°C mA 30 IRK.F112.. Series Current Carrying Capacity ITM 180oel 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 220 285 205 175 125 50 80% VDRM 50 60 90 220 285 205 170 120 50 180 el 350 425 350 295 230 50 550 695 550 448 337 50 80% VDRM 60 90 o Frequency f ITM 100µs 2060 1230 460 295 50 ITM Units 2900 1785 552 448 50 A A A A A V V 80% VDRM 60 A/µ s °C 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF On-state Conduction Parameter IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current IRK.F112.. 112 90 250 3090 3237 2600 2720 Units Conditions A °C A A TC = 90°C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave I2t Maximum I2 t for fusing 47.8 43.6 33.8 30.8 I2 √t Maximum I2 √t for fusing 478 1.19 1.43 1.67 1.12 1.77 600 1000 KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. V mA mA Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6 Ω, Ig = 1A VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current 2 www.irf.com IRK.F112.. Series Bulletin I27091 rev. A 09/97 Switching Parameter di/dt Maximum non-repetitive rate of rise IRK.F112.. 800 Units Conditions A/µs Gate drive 20V, 20 Ω, tr ≤ 1ms, VD= 80% VDRM T J = 125°C ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM t rr Maximum recovery time Maximum turn-off time N 10 2 L 15 µs tq Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied IRK.F112.. 1000 Units Conditions V/µs TJ = 125°C., exponential to 67% VDRM Triggering Parameter P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger IRK.F112.. 60 10 10 5 200 3 20 0.25 Units Conditions W W A V mA V mA V TJ = 125°C, rated VDRM applied TJ = 25°C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms Thermal and Mechanical Specifications Parameter TJ T stg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound IRK.F112.. - 40 to 125 - 40 to 150 0.17 Units Conditions °C K/W Per junction, DC operation www.irf.com 3 IRK.F112.. Series Bulletin I27091 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction 0.015 0.018 0.024 0.036 0.060 0.012 0.020 0.027 0.037 0.060 Units K/W Conditions TJ = 125°C Ordering Information Table Device Code IRK 1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR T 2 F 3 11 4 2 5 - 08 6 H 7 L 8 N 9 - Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws 6 7 8 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H ≤ 400V/µs - tq code: N ≤ 10µs L ≤ 15µs - None = Standard devices N = Aluminum nitrade substrate 9 NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F112.. Series Bulletin I27091 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types IRK...1 IRK...2 A 25 (0.98) 23 (0.91) B ---30 (1.18) C ---36 (1.42) D 41 (1.61) ---- E 47 (1.85) ---- IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF.. Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 IRK.F112.. Series R thJC(DC) = 0.17 K/W 120 130 120 110 Conduction Period IRK.F112.. Series R thJC (DC) = 0.17 K/W 110 Conduction Angle 100 90 80 70 0 40 80 120 160 200 Average On-state Current (A) 30° 60° 90° 120° 180° DC 100 30° 60° 90 90° 120° 180° 80 0 20 40 60 80 100 120 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F112.. Series Bulletin I27091 rev. A 09/97 Maximum Average On-state Power Loss (W) 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Average On-state Current (A) Conduction Angle Maximum Average On-state Power Loss (W) 280 240 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 1 80 Average On-state Current (A) IRK.F112.. Series Per Junct ion T J = 125°C RMS Limit Conduction Period 180° 120° 90° 60° 30° DC 180° 120° 90° 60° 30° RMS Limit IRK.F112.. Series Per Junction T J= 125°C Fig. 3 - On-state Power Loss Characteristics 2800 2600 2400 2200 2000 1800 1600 1400 1200 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - On-state Power Loss Characteristics 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 IRK.F112.. Series Per Junction 0.1 Pulse Train Duration (s) 1 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated V RRMReapplied IRK.F112.. Series Per Junction 1200 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current 1 Steady State Value R thJC= 0.17 K/W (DC Operation) 0.1 1000 T J= 25°C 100 T J = 125°C Transient Thermal Impedance Z thJC(K/W) 0.01 IRK.F112.. Series Per Junction 0.001 0.001 IRK.F112.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.01 0.1 1 10 100 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic 6 www.irf.com IRK.F112.. Series Bulletin I27091 rev. A 09/97 Maximum Reverse Recovery Charge - Qrr (µC) IRK.F112.. Series T J = 125 °C I TM = 500 A 300 A 200 A Maximum Reverse Recovery Current - Irr (A) 160 140 120 100 80 60 40 20 10 50 A 140 120 100 80 60 40 20 10 IRK.F112.. Series T J = 125 °C I TM= 500 A 300 A 200 A 100 A 50 A 100 A 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristics 1E4 IRK.F112.. Series Sinusoidal Pulse T C = 90 °C Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D= 80% V DRM 50 Hz 1E3 1000 150 400 2500 5000 50 Hz 2500 5000 1000 400 150 tp IRK.F112.. Series Sinusoidal Pulse T C = 60 °C 1E2 1E1 1E2 1E3 1E 1E1 1E4 41 E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 1E4 IRK.F112.. Series Trapezoidal Pulse T C = 90°C, di/dt 50A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F112.. Series Trapezoidal Pulse T C = 90°C, di/dt 100A/µs Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM Peak On-state Current (A) tp tp 50 Hz 1E3 400 1000 2500 5000 150 400 1000 2500 5000 50 Hz 150 1E2 1E1 1E2 1E3 1E4 4 1E1 1E 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F112.. Series Bulletin I27091 rev. A 09/97 1E4 IRK.F112.. Series Trapezoidal Pulse T C= 60 °C, di/dt 50A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F112.. Series Trapezoidal Pulse T C = 60°C, di/dt 100A/µs Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM Peak On-state Current (A) tp tp 50 Hz 1E3 1000 2500 5000 150 400 1000 2500 5000 400 50 Hz 150 1E2 1E1 1E2 1E3 1E4 41 E1 1E 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 10 joules per pulse 10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05 Peak On-state Current (A) 1E3 0.05 0.5 0.25 0.1 1 2.5 5 1E2 IRK.F112.. Series Sinusoidal pulse tp IRK.F112..Series Trapezoidal Pulse di/dt 50A/µs tp 1E1 1E1 1E2 1E3 1E4 1E1 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr