IRKTF82-08HN

Bulletin I27103 rev. A 09/97 IRK.F82.. SERIES FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-pakä Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS i solating voltage Industrial standard package UL E78996 approved 81 A Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It 2 IRK.F82.. 81 90 180 2200 2300 24.2 22.1 242 Units A °C A A A KA 2s KA 2s KA 2√ s µs µs V o @ 50Hz @ 60Hz I 2√ t tq t rr VDRM / V RRM TJ range range 10 and 15 2 up to 800 - 40 to 125 C www.irf.com 1 IRK.F82.. Series Bulletin I27103 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 IRK.F82.. 08 VRRM/VDRM, maximum repetitive peak reverse voltage V 400 800 VRSM , maximum nonrepetitive peak rev. voltage V 400 800 IRRM/I DRM max. @ T J = 125°C mA 30 Current Carrying Capacity ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 160 200 150 135 90 50 80% VDRM 50 60 90 265 320 240 215 160 50 o Frequency f ITM 180 el o ITM 100µs Units 250 290 260 235 190 50 400 475 400 355 275 50 2240 1070 370 235 50 3100 1550 550 355 50 A A A A A V V 80% VDRM 60 90 80% VDRM 60 A/µ s °C 22 Ω / 0.15 µF 22 Ω / 0.15 µF 22 Ω / 0.15 µF On-state Conduction Parameter IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS current ITSM Maximum peak, one-cycle, non-repetitive surge current IRK.F82.. 81 90 180 2200 2300 1850 1950 Units Conditions A °C A A TC = 90°C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave I2 t Maximum I2 t for fusing 24.2 22.1 17.1 15.6 I2 √t Maximum I2 √t for fusing 242 1.20 1.24 2.18 2.00 1.96 600 1000 KA 2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. V mA mA Ipk = 350A, T J = T J max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6 Ω, Ig = 1A VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current 2 www.irf.com IRK.F82.. Series Bulletin I27103 rev. A 09/97 Switching Parameter di/dt Maximum non-repetitive rate of rise IRK.F82.. 800 Units Conditions A/µs Gate drive 20V, 20 Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM trr tq Maximum recovery time Maximum turn-off time N 10 2 L 15 µs Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied IRK.F82.. 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM Triggering Parameter P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger IRK.F82.. 40 2 5 5 200 3 20 0.25 Units Conditions W W A V mA V mA V TJ = 125°C, rated VDRM applied TJ = 25°C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms Thermal and Mechanical Specifications Parameter TJ T stg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound IRK.F82.. - 40 to 125 - 40 to 150 0.25 Units Conditions °C K/W Per junction, DC operation www.irf.com 3 IRK.F82.. Series Bulletin I27103 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction 0.016 0.019 0.024 0.035 0.060 0.011 0.020 0.026 0.037 0.060 Units K/W Conditions TJ = 125°C Ordering Information Table Device Code IRK 1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR T 2 F 3 8 4 2 5 - 08 6 H 7 L 8 N 8 - Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws 6 7 8 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H ≤ 400V/µs - tq code: N ≤ 10µs L ≤ 15µs - None = Standard devices N = Aluminum nitrade substrate 9 NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F82.. Series Bulletin I27103 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types IRK...1 IRK...2 A 25 (0.98) 23 (0.91) B ---30 (1.18) C ---36 (1.42) D 41 (1.61) ---- E 47 (1.85) ---- IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF.. Maximum Allowable Case Temperature (°C ) Maximum Allowable Case Temperature (°C) 130 120 110 Conduction Angle 130 120 110 IRK.F82.. Series R thJC (DC) = 0.25 K/W IRK.F82.. Series R thJC (DC) = 0.25 K/W Conduction Period 100 90 80 70 0 20 40 60 80 100 Average On-state Current (A) 30° 100 90 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) 30° 60° 90° 120° 180° DC 60° 90° 120° 180° Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F82.. Series Bulletin I27103 rev. A 09/97 Maximum Average On-state Power Loss (W) Max imum Average On-state Power Loss (W) 140 120 100 80 60 Conduction Angle 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Average On-state Current (A) IRK.F82.. Series Per Junction T J = 125°C RMS Limit Conduction Period 180° 120° 90° 60° 30° RMS Limit DC 180° 120° 90° 60° 30° 40 20 0 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A) IRK.F82.. Series Per Junction T J = 125°C Fig. 3 - On-state Power Loss Characteristics 2000 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 1 10 100 Number Of Equal Amplitude Half Cycle Curre nt Pulses (N) Fig. 4 - On-state Power Loss Characteristics 2200 2000 1800 1600 1400 1200 1000 IRK.F82.. Series Per Junction 0.1 Pulse Train Duration (s) 1 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Contro l Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated VRRMReapplied IRK.F82.. Series Per Junction 800 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) Fig. 6 - Maximum Non-Repetitive Surge Current 1 Steady State Value R thJC= 0.25 K/W (DC Operation) 0.1 T J = 25°C T J = 125°C 1000 Transient Thermal Impedance Z thJC(K/W) 0.01 IRK.F82.. Series Per Junction 100 1 2 3 4 5 6 7 8 Instantaneous On-state Voltage (V) IRK.F82.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic 6 www.irf.com IRK.F82.. Series Bulletin I27103 rev. A 09/97 Maximum Reverse Recovery Charge - Qrr (µC) 160 140 120 100 100 A IRK.F82.. Series T J = 125 °C ITM = 500 A Maximum Reverse Recovery Current - Irr (A) 120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50 60 70 80 90 100 50 A IRK.82.. Series T J= 125 °C I TM = 500 A 300 A 200 A 100 A 300 A 200 A 80 60 50 A 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristic 1E4 IRK.F82.. Series Sinusoidal Pulse T C = 60 °C Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM Fig. 10 - Reverse Recovery Current Characteristic Peak On-state Current (A) tp tp IRK.F82.. Series Sinusoidal Pulse T C = 90 °C Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM 1E3 1000 2500 5000 400 150 50 Hz 150 50 Hz 1000 2500 5000 400 1E2 1E1 1E2 1E3 1E1E4 E1 4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 1E4 IRK.F82.. Series Trapezoidal Pulse T C = 60 °C, di/dt 50A/µs Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F82.. Series Trapezoidal Pulse T = 60 °C, di/dt 100A/µs C Peak On-state Current (A) tp tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM 1E3 400 50 Hz 150 1000 2500 5000 5000 2500 1000 400 150 50 Hz 1E2 1E1 1E2 1E3 1E4 41E1 1E 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F82.. Series Bulletin I27103 rev. A 09/97 1E4 IRK.F82.. Series Trapezoidal Pulse T C = 90 °C, di/dt 50A/µs Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F 82.. Series Trapezoidal Pulse T C = 90 °C, di/dt 100A/µs Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM Peak On-state Current (A) tp tp 1E3 150 400 1000 2500 5000 50 Hz 50 Hz 1000 2500 5000 400 150 1E2 1E1 1E2 1E3 1E4 1E1 1 E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 10 joules per pulse Peak On-state Current (A) 2.5 5 2.5 5 10 joules per pulse 1E3 0.5 0.25 0.1 0.05 0.01 1 1 0.5 0.25 0.1 0.05 1E2 IRK.F82.. Series Trapezoidal Pulse di/dt 50A/µs tp IRK.F82.. Series Sinusoidal pulse tp 1E1 1E1 1E2 1E3 1E4 1 E1 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms tr