IRKV105

Bulletin I27136 rev. E 10/02 IRKU/V105 SERIES THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pullout: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IT(AV) @ 85°C IT(RMS) ITSM @ 50Hz @ 60Hz It 2 IRKU/V105 105 165 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 125 - 40 to130 Units A A A A KA 2s KA 2s KA 2√s V o @ 50Hz @ 60Hz I 2√ t VRRM range TSTG TJ C C o www.irf.com 1 IRKU/V105 Series Bulletin I27136 rev. E 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 IRKU/V105 08 12 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 800 1200 1600 500 900 1300 1700 400 800 1200 1600 IRRM IDRM 130°C mA 20 On-state Conduction Parameters IT(AV) Max. average on-state current IT(RMS) Max. RMS on-state current. ITSM @ TC Max. peak, one cycle non-repetitive on-state current IRKU/V105 105 165 77 1785 1870 1500 1570 2000 2100 Units Conditions 180o conduction, half sine wave, A °C TC = 85oC DC t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied Initial TJ = TJ max. Sinusoidal half wave, Initial TJ = TJ max. A I2t Max. I2t for fusing 15.91 14.52 11.25 10.27 20.00 18.30 KA s 2 I2√t Max. I2√ t for fusing (1) voltage (2) 159.1 0.80 0.85 2.37 2.25 1.64 K A2√s V mΩ t= 0.1 to 10ms, no voltage reappl., TJ =TJ max. Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) T J = 25oC, from 0.67 VDRM, TJ = TJ max TJ = TJ max TJ = 25°C VT(TO) Max. value of threshold rt VTM di/dt Max. value of on-state slope resistance (2) Max. peak on-state voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current V 150 200 A/µs ITM =π x IT(AV), I = 500mA, g tr < 0.5 µs, t p > 6 µs TJ = 25oC, anode supply = 6V, mA 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (1) I2t for time t = I2√t x √t . x x (3) 16.7% x π x IAV < I < π x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (4) I > π x IAV 2 www.irf.com IRKU/V105 Series Bulletin I27136 rev. E 10/02 Triggering Parameters PGM IGM VGT Max. peak gate power IRK.U/V105 12 3 3 10 4.0 2.5 1.7 270 150 80 0.25 6 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current -VGM Max. peak negative gate voltage Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger IGD Max. gate current that will not trigger V TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied o Anode supply = 6V resistive load Anode supply = 6V resistive load mA VGD V mA Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 V/µs shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 20 mA TJ = 130oC, gate open circuit IRKU/V 105 Units Conditions (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temperature range IRKU/V105 - 40 to 130 - 40 to 125 0.135 Units Conditions °C Per module, DC operation K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar wt Approximate weight Case style 0.1 5 3 110 (4) TO-240AA Nm g (oz) JEDEC ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices 180o IRKU/V105 0.04 Sine half wave conduction 120o 0.05 90o 0.06 60o 0.08 30o 0.12 180o 0.03 Rect. wave conduction 120o 0.05 90o 0.06 60o 0.08 30o 0.12 Units °C/W www.irf.com 3 IRKU/V105 Series Bulletin I27136 rev. E 10/02 Ordering Information Table Device Code IRK.106 types With no auxiliary cathode IRK 1 1 2 3 4 5 6 Module type U 2 105 3 / 16 4 A 5 S90 6 Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs e.g. : IRKU106/16A etc. * * Available with no auxiliary cathode. To specify change: 105 to 106 Outline Table Dimensions are in millimeters and [inches] IRKU (1) + IRKV (1) - (2) - + (2) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 + (3) K2 G2 (4) (5) (7) (6) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRKU/V105 Series Bulletin I27136 rev. E 10/02 Maximum Allowable Case Temperature (°C) IRK.105.. Series R thJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (°C) 130 120 110 Conduction Angle 130 120 110 IRK.105.. Series R (DC) = 0.27 K/W thJC Conduction Period 100 90 80 70 100 90 80 70 30° 60° 30° 90° 120° 180° 60° 90° 120° 180° DC 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 40 20 0 0 20 40 60 200 180 160 140 120 Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° RMS Limit Maximum Average On-state Power Loss (W) DC 180° 120° 90° 60° 30° 100 RMS Limit 80 60 40 20 0 0 20 40 60 Conduction Period Conduction Angle IRK.105.. Series Per Junction T J = 130°C 80 100 120 IRK.105.. Series Per Junction T J = 130°C 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 1500 1400 1300 1200 1100 1000 900 800 700 1 Peak Half Sine Wave On-state Current (A) 1600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1800 1600 1400 1200 1000 800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 130°C No Voltage Reapplied Rated V RRMReapplied IRK.105.. Series Per Junction 10 100 IRK.105.. Series Per Junction 0.1 Pulse Train Duration (s) 1 600 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRKU/V105 Series Bulletin I27136 rev. E 10/02 600 hS Rt Maximum Total Power Loss (W) 500 400 300 200 100 0 180° (Sine) 180° (Rect) 0. 2K /W A = 0. 1 W K/ -D ta el R 0. 3 K/ W 2 x IRK.105.. Series Single Phase Bridge Connected T J = 130°C 0 40 80 120 160 0. 5 K/W 0.7 K/ W 1 K/ W 2 K/W 0 200 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV) 900 Maximum Total Power Loss (W) 800 R 700 600 500 400 300 200 100 0 0 Io 60° (Rect) 0.2 0 .3 3 x IRK.105.. Series 6-Pulse Midpoint Connection Bridge T J = 130°C 0 .5 1 K /W SA th = 0. 1 K/ W -D K/ W K/ W el ta R K/ W 50 100 150 200 250 300 350 400 450 0 Total Output Current (A) 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-state Power Loss Characteristics 1000 Instantaneous On-state Current (A) 100 T J= 25°C 10 T J= 130°C IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics 6 www.irf.com IRKU/V105 Series Bulletin I27136 rev. E 10/02 Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Recovery Current - Irr (A) 700 600 500 50 A 140 120 100 80 60 40 20 10 IRK.105.. Series TJ = 125 °C I TM = 200 A 100 A 50 A 20 A 10 A IRK.105.. Series T J= 125 °C I TM = 200 A 100 A 400 300 200 100 10 20 A 10 A 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 10 - Recovery Charge Characteristics 1 Steady State Value: R thJC = 0.27 K/W (DC Operation) Fig. 11 - Recovery Current Characteristics Transient Thermal Impedance Z thJC (K/W) 0.1 IRK.105.. Series Per Junction 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 12 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = -40 °C (b) TJ = 25 °C TJ = 125 °C 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) IRK.105.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 13- Gate Characteristics www.irf.com 7 IRKU/V105 Series Bulletin I27136 rev. E 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 8 www.irf.com