IRL1004L

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A… Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1004L) is available for lowprofile application. D2Pak IRL1004S TO-262 IRL1004L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current  † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy† Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 130 … 92 … 520 3.8 200 1.3 ± 16 700 78 20 5.0 -55 to + 175 300 (1.6mm from case) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)* Typ. ––– ––– Max. 0.75 40 Units °C/W www.irf.com 1 12/29/99 IRL1004S/1004L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Min. 40 ––– ––– ––– 1.0 63 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V V GS = 0V, ID = 250µA 0.04 ––– V/°C Reference to 25°C, I D = 1mA ––– 0.0065 VGS = 10V, ID = 78A „ Ω ––– 0.009 VGS = 4.5V, ID = 65A „ ––– V VDS = V GS, ID = 250µA ––– ––– S VDS = 25V, ID = 78A† ––– 25 VDS = 40V, VGS = 0V µA ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C ––– 100 VGS = 16V nA ––– -100 VGS = -16V ––– 100 ID = 78A ––– 32 nC VDS = 32V ––– 43 VGS = 4.5V, See Fig. 6 and 13 „† 16 ––– VDD = 20V, 210 ––– ID = 78A, 25 ––– ns RG = 2.5Ω, 14 ––– RD = 0.18Ω, See Fig. 10 „† Between lead, 7.5 nH ––– and center of die contact 5330 ––– VGS = 0V 1480 ––– pF VDS = 25V 320 ––– ƒ = 1.0MHz, See Fig. 5…† Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode)‡ Pulsed Source Current (Body Diode) ‡ Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 130… showing the A G integral reverse ––– ––– 520 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V„ ––– 78 120 ns TJ = 25°C, IF = 78A ––– 180 270 nC di/dt = 100A/µs„† Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4 Uses IRL1004 data and test conditions ‚ Starting TJ = 25°C, L = 0.23mH TJ ≤ 175°C RG = 25Ω, I AS = 78A. (See Figure 12) † ƒ ISD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL1004S/1004L 10000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 1000 100 10 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 100 10 2.7V 1 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 1 0.1 20µs PULSE WIDTH TJ = 175 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 130A TJ = 25 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 100 TJ = 175 ° C 1.5 10 1.0 1 0.5 0.1 2.0 V DS = 50V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL1004S/1004L 10000 VGS , Gate-to-Source Voltage (V) 8000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = 78 A VDS = 32V VDS = 20V 10 C, Capacitance (pF) 6000 Ciss 8 6 4000 Coss 4 2000 Crss 0 1 10 100 2 0 0 30 60 90 FOR TEST CIRCUIT SEE FIGURE 13 120 150 180 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C 1000 10us 100 I D , Drain Current (A) 10 100 100us 1ms TJ = 25 ° C 1 10 10ms 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 1 1 TC = 25 °C TJ = 175 °C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL1004S/1004L 140 LIMITED BY PACKAGE 120 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 100 -VDD 80 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL1004S/1004L L VDS D.U.T. RG + 4.5 V 1800 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 1500 ID 32A 55A 78A VDD IAS tp 0.01Ω 1200 900 Fig 12a. Unclamped Inductive Test Circuit 600 300 V(BR)DSS tp VDD VDS 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF 4.5 V QGS VG QGD VGS 3mA .3µF D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL1004S/1004L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs www.irf.com 7 IRL1004S/1004L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRL1004S/1004L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 9 IRL1004S/1004L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 0 .3 6 8 ( .0 1 4 5 ) 0 .3 4 2 ( .0 1 3 5 ) F EE D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 ( .4 5 7 ) 1 1 .4 0 ( .4 4 9 ) 1 5 .4 2 ( .6 0 9 ) 1 5 .2 2 ( .6 0 1 ) 2 4 .3 0 ( .9 5 7 ) 2 3 .9 0 ( .9 4 1 ) TRL 1 0 .9 0 ( .4 2 9 ) 1 0 .7 0 ( .4 2 1 ) 1 .7 5 ( .0 6 9 ) 1 .2 5 ( .0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D IR E C T IO N 1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 ) 2 7 .4 0 (1 .0 79 ) 2 3 .9 0 (.9 4 1) 4 3 3 0 .0 0 (1 4 .1 7 3) M A X. 6 0 .0 0 ( 2 .3 6 2 ) M IN . N OT ES : 1. C O M F O R M S T O E IA -4 1 8 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . 2 6 .4 0 ( 1 .0 3 9 ) 2 4 .4 0 ( .9 6 1 ) 3 3 0 .4 0 (1 .1 97 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99 10 www.irf.com