IRL1004LPBF

PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A… Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1004L) is available for lowprofile application. D2Pak IRL1004S TO-262 IRL1004L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current  † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy† Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 130 … 92 … 520 3.8 200 1.3 ± 16 700 78 20 5.0 -55 to + 175 300 (1.6mm from case) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)* Typ. ––– ––– Max. 0.75 40 Units °C/W www.irf.com 1 07/19/04 IRL1004S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Min. 40 ––– ––– ––– 1.0 63 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.04 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.0065 VGS = 10V, ID = 78A „ Ω ––– 0.009 VGS = 4.5V, ID = 65A „ ––– V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 78A† ––– 25 VDS = 40V, VGS = 0V µA ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C ––– 100 VGS = 16V nA ––– -100 VGS = -16V ––– 100 ID = 78A ––– 32 nC VDS = 32V ––– 43 VGS = 4.5V, See Fig. 6 and 13 „† 16 ––– VDD = 20V, 210 ––– ID = 78A, 25 ––– ns RG = 2.5Ω, 14 ––– RD = 0.18Ω, See Fig. 10 „† Between lead, 7.5 nH ––– and center of die contact 5330 ––– VGS = 0V 1480 ––– pF VDS = 25V 320 ––– ƒ = 1.0MHz, See Fig. 5…† Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode)‡ Pulsed Source Current (Body Diode) ‡ Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 130… showing the A G integral reverse ––– ––– 520 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V„ ––– 78 120 ns TJ = 25°C, IF = 78A ––– 180 270 nC di/dt = 100A/µs„† Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4 Uses IRL1004 data and test conditions ‚ Starting TJ = 25°C, L = 0.23mH TJ ≤ 175°C RG = 25Ω, I AS = 78A. (See Figure 12) † ƒ ISD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL1004S/LPbF 10000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1000 I D , Drain-to-Source Current (A) 1000 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 100 100 10 10 2.7V 1 2.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 130A 2.0 TJ = 175 ° C 1.5 10 1.0 1 0.5 0.1 2.0 V DS = 50V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL1004S/LPbF 10000 VGS , Gate-to-Source Voltage (V) 8000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = 78 A VDS = 32V VDS = 20V 10 C, Capacitance (pF) 6000 Ciss 8 6 4000 Coss 4 2000 Crss 0 1 10 100 2 0 0 30 60 90 FOR TEST CIRCUIT SEE FIGURE 13 120 150 180 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 TJ = 175 ° C 1000 10us 100us 1ms 10 10ms 10 100 TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 1 1 TC = 25 °C TJ = 175 °C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL1004S/LPbF 140 LIMITED BY PACKAGE 120 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 100 80 60 40 20 0 -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL1004S/LPbF L VDS D.U.T. RG + 4.5 V EAS , Single Pulse Avalanche Energy (mJ) 1800 TOP BOTTOM 1500 ID 32A 55A 78A VDD IAS tp 0.01Ω 1200 900 Fig 12a. Unclamped Inductive Test Circuit 600 300 V(BR)DSS tp VDD VDS 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF 4.5 V QGS VG QGD VGS 3mA .3µF D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL1004S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs www.irf.com 7 IRL1004S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T H IS IS AN IR F 530S WIT H LOT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB LY LINE "L" Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E RNAT IONAL RE CT IF IE R LOGO PART NUMB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L AS S E MB L Y L OT CODE OR INT ERNAT IONAL RE CT IF IER LOGO AS S EMB LY L OT CODE PART NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F RE E PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS S E MB L Y S IT E CODE 8 www.irf.com IRL1004S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE: THIS IS AN IRL 3103L LOT CODE 1789 AS S EMBL ED ON WW 19, 1997 IN THE AS S E MB LY L INE "C" Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT ERNATIONAL RE CTIF IE R L OGO AS S EMBLY LOT CODE PART NUMBE R DAT E CODE YE AR 7 = 1997 WE EK 19 LINE C OR INT ERNAT IONAL RECT IF IER L OGO AS S EMBL Y L OT CODE PART NUMB ER DAT E CODE P = DES IGNAT E S LEAD-F RE E PRODUCT (OPT IONAL) YE AR 7 = 1997 WE EK 19 A = AS S EMBL Y S IT E CODE www.irf.com 9 IRL1004S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com