IRL1404Z

PD - 94804A AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRL1404Z IRL1404ZS IRL1404ZL VDSS = 40V RDS(on) = 3.1mW ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB IRL1404Z D2Pak IRL1404ZS TO-262 IRL1404ZL 5h…x‡†qÂGguy‡yÂRg†u€s… 8 7 8Â4ÂT7Â1Âu7 C 8Â4ÂT7Â1 #u7 C 8G P 8Â4T 7Â1 #u7 C C Â4ÂT Â1 #u7 V 9 2CTCOGVGT Â4ÂVÂSuxui€ÂFuyu†qp /CZ  " %# %' ! # 7PKVU 5 AS ASÂ4ÂV 7€†u€‡‡…Â8„gu€Â7‡„„q€†ÂV ASÂ4ÂVÂPgiwgsqÂFuyu†qp 7€†u€‡‡…Â8„gu€Â7‡„„q€†ÂV 7€†u€‡‡…Â8„gu€Â7‡„„q€†ÂV P‡x…qpÂ8„gu€Â7‡„„q€†Â P‰q„Â8u……u‚g†u€Â Fu€qg„Â8q„g†u€sÂ@gi†„ ™ W Wu7 V yD AS Ag†q†S‡„iqÂVx†gsq 5SÂTtq„ygxx‘Âxuyu†qp 5SÂTq…†qp C 5R 9 5R 9 T T Su€sxqÂP‡x…qÂ5ˆgxg€itqÂ9€q„s‘ d ÂvÂ$ Su€sxqÂP‡x…qÂ5ˆgxg€itqÂ9€q„s‘ÂTq…†qpÂVgx‡q 5ˆgxg€itqÂ7‡„„q€† Ù h  "' SqqÂ@us g hÂ#Â$ Rq‚q†u†uˆqÂ5ˆgxg€itqÂ9€q„s‘ I‚q„g†u€sÂD‡€i†u€Âg€p S†„gsqÂTqy‚q„g†‡„qÂRg€sq D STA g 5 yD ##†ÂÂ%# u7 !Â$yyÂr„yÂig…q Âxhr u€ÂH y Sxpq„u€sÂTqy‚q„g†‡„qÂr„Â…qi€p… Ttq„ygxÂRq…u…†g€iq D7 RT7S RTD5 RTD5 RT G‡€†u€sÂT„ƒ‡qÂ$! „ÂG!…i„q‰ y y 2CTCOGVGT 6[R /CZ $# $ " 7PKVU u7W D‡€i†u€†7g…q 7g…q†Su€wÂ@xg†ÂA„qg…qpÂS‡„rgiq D‡€i†u€†5yhuq€†Â i i # D‡€i†u€†5yhuq€†ÂP76ÂG‡€† jà www.irf.com 1 2/2/04 IRL1404Z/S/L 9xqi†„uigxÂ7tg„gi†q„u…†ui…Â4ÂT,Â1 #u7‡€xq……†tq„‰u…q…‚qiuruqp V 'V R 6R8SS 6R8SS 'T D 8S€ 8„gu€†S‡„iqÂ6„qgwp‰€ÂVx†gsq 6„qgwp‰€ÂVx†gsqÂTqy‚Â7qrruiuq€† S†g†uiÂ8„gu€†S‡„iqÂI€Rq…u…†g€iq Ag†qÂTt„q…txpÂVx†gsq @„‰g„pÂT„g€…i€p‡i†g€iq 8„gu€†S‡„iqÂFqgwgsqÂ7‡„„q€† Ag†q†S‡„iqÂ@„‰g„pÂFqgwgsq Ag†q†S‡„iqÂRqˆq„…qÂFqgwgsq T†gxÂAg†qÂ7tg„sq Ag†q†S‡„iqÂ7tg„sq Ag†q†8„gu€ÂÄGuxxq„ÄÂ7tg„sq T‡„€I€Â8qxg‘ÂTuyq Ru…qÂTuyq T‡„€IrrÂ8qxg‘ÂTuyq @gxxÂTuyq C€†q„€gxÂ8„gu€ÂC€p‡i†g€iq C€†q„€gxÂS‡„iqÂC€p‡i†g€iq C€‚‡†Â7g‚giu†g€iq I‡†‚‡†Â7g‚giu†g€iq Rqˆq„…qÂT„g€…rq„Â7g‚giu†g€iq I‡†‚‡†Â7g‚giu†g€iq I‡†‚‡†Â7g‚giu†g€iq 9rrqi†uˆqÂI‡†‚‡†Â7g‚giu†g€iq Pg„gyq†q„ Gu€ T‘‚ Gg U€u†… " !" # !# V sr… C C AS†t "  8SS ASS Q Q Q † † † † F „ r s s… sp p€ prr 8 %# & " ' & ! "' "# %# #& '% #% !! &%  & F S 7 7 7 7 7 7 Âqrr u…… …… „…… …… …… …… S‡„iq8„gu€ÂRg†u€s…Âg€pÂ7tg„gi†q„u…†ui… ÂÂÂÂÂÂÂÂPg„gyq†q„ 7€†u€‡‡…ÂS‡„iqÂ7‡„„q€†Â 6p‘Â8upq P‡x…qpÂS‡„iqÂ7‡„„q€† 6p‘Â8upqÙ 8upqÂ@„‰g„pÂVx†gsq Rqˆq„…qÂRqiˆq„‘ÂTuyq Rqˆq„…qÂRqiˆq„‘Â7tg„sq @„‰g„pÂT‡„€I€ÂTuyq V V Â1ÂVÂC Â1 #z5 Vu7 Rqrq„q€iq†Â #u7ÂC Â1Ây5 ! y: V Â1ÂVÂC Â1Â%#5Âe "% V Â1Â#VÂC Â1Â"5Âe % V V Â1ÂV ÂC Â1 #z5 S V Â1ÂVÂC Â1Â%#5  z5 V Â1Â"VÂV Â1ÂV # V Â1Â"VÂV Â1ÂVÂT Â1 #u7  €5 V Â1Â$V   V Â1Â$V  C Â1Â%#5 €7 V Â1Â! V V Â1Â#VÂe V Â1 V C Â1Â%#5 €… R Â1Â": V Â1Â#VÂe 6q†‰qq€Âxqgp D €B $yy #u€ G r„y‚giwgsq S g€pÂiq€†q„rÂpuqÂi€†gi† V Â1ÂV V Â1 #V ‚@ Â1ÂGB’ V Â1ÂVÂÂV Â1ÂV Â1ÂGB’ V Â1ÂVÂÂV Â1Â! V Â1ÂGB’ V Â1ÂVÂV Â1ÂV†Â! VÂf AS 8 8 AS AS 8S 8S 8S 8S 8 8 AS 8 8 AS AS D AS AS 8 8S AS 88 8 A AS AS 8S AS AS AS 8S 8S 8S 7€pu†u€… C5 C5/ V5& †TT QTT †QP Gu€ T‘‚ Gg U€u†… & % $ & ! !' % GIS@9T…‘yhx 5 …t‰u€s†tq u€†qs„gx„qˆq„…q ‚€Âv‡€i†u€Âpupq V T,Â1 #u7ÂC5Â1Â%#5ÂV)5Â1ÂVÂe €… T,Â1 #u7ÂC(Â1Â%#5ÂV Â1 V €7 pup†Â1Â5z…Âe G 88 7€pu†u€… D S C€†„u€…ui†‡„€€Â†uyqÂu…€qsxusuhxq†‡„€€Âu…Âpyu€g†qpÂh‘ÂFSF8 Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.079mH, RG = 25W, IAS = 75A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width £ 1.0ms; duty cycle £ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical † This value determined from sample failure population. 100% ‡ This is only applied to TO-220AB package. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. tested to this value in production. repetitive avalanche performance. 2 www.irf.com IRL1404Z/S/L 1000 TIP ID, Drain-to-Source Current (A) 100 6ITTIG ID, Drain-to-Source Current (A) VAS V %V #V "#V "V !#V !!V !V 1000 TIP VAS V %V #V "#V "V !#V !!V !V 100 6ITTIG !V 10 10 !V 1 0.1 1 $z…ÂPUFS9ÂWC8TB TvÂ1 #u7 10 100 V DS, Drain-to-Source Voltage (V) 1 0.1 1 $z…ÂPUFS9ÂWC8TB TvÂ1Â%#u7 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000  $   T DÂ1Â%#u7 100  † € q „ „ ‡ 7  q i „ ‡  S   †  € u g „ 8   8 C 10 T DÂ1 #u7 V8SÂ1ÂV $z…ÂPUFS9ÂWC8TB 2 3 4 5 6 7 8 9 10  S  Âq i € g †i ‡ p €  i … € g „ T Âp „ g ‰ „  @  … r A TDÂ1 #u7 #  T DÂ1Â%#u7 # V DS = 10V 1.0   #  #  VASÂAg†q†S‡„iqÂVx†gsqÂV Fig 3. Typical Transfer Characteristics C88„gu€†S‡„iqÂ7‡„„q€†Â5 Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRL1404Z/S/L $   @  ‚  q i € g u†i g ‚ g 7 Â7 VASÂÂÂ1ÂVÂÂÂÂÂÂÂrÂ1ÂÂGB` 7u…… ÂÂ1Â7 s… Â7spÂÂ7 p… SBIRT98 7„…… Â1Â7 sp 7…… 1Â7p… Â7sp 7u…… 7…… 7„……  V   q s g † x V  q i „ ‡  S   †  q † g A  S A V  C81Â%#5 # " !    V8S1Â! V V8S1 V      " $ & V8SÂ8„gu€†S‡„iqÂVx†gsqÂV Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ÂQAÂÂT†gxÂAg†qÂ7tg„sq€7 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage   5   † € q „ „ ‡ 7  € u g „ 8  q … „ q ˆ q R   8 CS   5   † € q „ „ ‡ 7  q i „ ‡  S   †  € u g „ 8    C8 T DÂ1Â%#u7  IP9R5TCIHÂCHÂTBCSÂ5R95 FCGCT98Â6YÂR 8S€   z…qi y…qi y…qi     T DÂ1 #u7 VASÂ1ÂV  #  #  # VS8ÂS‡„iq†8„gu€ÂVx†gsqÂV  TiÂ1 #u7 TvÂ1Â%#u7 Su€sxqÂP‡x…q    V8SÂ8„gu€†S‡„iqÂVx†gsqÂV Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL1404Z/S/L  Fuyu†qpÂ6‘ÂPgiwgsq  5   † € q „ „ ‡ 7  € u g „ 8   C8 #  #  Âq i € g †u… … q R € I   Âq ip „q ‡ u’  xg Sy „ †   € ug H „   Â8     €     S  8 R   C8 1Â%#5 VASÂ1ÂV # # %#  # # %#              ÂT 7ÂÂ7g…qÂTqy‚q„g†‡„qÂu7 T DÂÂD‡€i†u€ÂTqy‚q„g†‡„qÂu7 Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature  8Â1Â#  7  D t †  `    q … €   ‚ … q R  xg y „ q t T  '    #   WJ R1 R1 WJ W1 W2 R2 R2 R3 R3 WC W W1 W2 W3 SCHAF9ÂPUFS9 ÂTB9RG5FÂR9SPIHS9 W3 Ci= Wi Ri Ci= iRi Ri (°C/W) ti (sec) 0.000213 0.185 0.241 0.001234 0.227 0.021750 H†q…( Â8‡†‘Â@gi†„Â8Â1†† ÂPqgwÂTvÂ1ÂPÂpyÂ`†tviÂÂTi '      † ÂRqi†g€s‡xg„ÂP‡x…qÂ8‡„g†u€Â…qi  Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL1404Z/S/L  15V VDS L DRIVER RG VGS 20V D.U.T IAS tp + V - DD A 0.01: Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp  D y    ‘ s „  q € 9  q  t i € g  xg ˆ 5   q x… ‡ P   q xs €  uS   S  5 9      ID 16A 26A BOTTOM 75A TOP    S†g„†u€sÂT DÂÂD‡€i†u€ÂTqy‚q„g†‡„qÂu7 I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD  Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF  V    q s g † x V  xp   t … q „ t †Â q †  g A   t †   S A V    C8Â1 #z5 D.U.T. VGS 3mA + V - DS           T DÂÂTqy‚q„g†‡„qÂÂu7 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRL1404Z/S/L   5    † € q „ „ ‡ 7  q t i € g xg  ˆ 5 8‡†‘Â7‘ixqÂ1ÂSu€sxqÂP‡x…q 5xx‰qp gˆgxg€itq 7‡„„q€†Â ˆ… gˆgxg€itq g……‡yu€s ' Tv 1 ‚‡x…q‰up†t †gˆÂ #u7 p‡q †Â  gˆgxg€itqÂx……q… #   ' ' ' †gˆÂ…qi ' ' Fig 15. Typical Avalanche Current vs.Pulsewidth    D y   ‘ s „ q  € 9  q t i € g  xg ˆ 5   R 5 9     TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A      S†g„†u€sÂT DÂÂD‡€i†u€ÂTqy‚q„g†‡„qÂu7 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·t av www.irf.com Fig 16. Maximum Avalanche Energy vs. Temperature 7 IRL1404Z/S/L D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG · dv/dt controlled by RG · Driver same type as D.U.T. · I SD controlled by Duty Factor "D" · D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS V GS RG 10V Pulse Width £ 1 µs Duty Factor £ 0.1 % D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRL1404Z/S/L TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) Dimensions are shown in millimeters (inches) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS . TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃ&Ã2à ((& X@@Fà ( GDI@Ã8 For GB Production @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (à ((& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP GPUÃ8P9@ 96U@Ã8P9@ www.irf.com 9 IRL1404Z/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ For GB Production Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S A$"T 96U@Ã8P9@ UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP GPUÃ8P9@ 10 www.irf.com IRL1404Z/S/L 2- COLLECTOR 3- EMITTER IGBT 1- GATE S @ 7 H V I à U S 6 Q @ 9 P 8 à @ U 6 9 & ( ( à 2 à & à S 6 @ ` ( à F @ @ X 8 à @ DI G Dimensions are shown in millimeters (inches) TO-262 Part Marking Information G 6 I P D U 6 I S @ U DI S @P D DA B UP 8G @ S & ( ( à  ( à X X à I P à 9 @ G 7 H @ T T 6 G "  " G S D à I 6 à T D à DT C U ) @ G Q H 6 Y @ ( ' & à @ 9 P 8 à U P G ` G 7 H @ T T 6 @ 9 P 8 à U P G TO-262 Package Outline Å 8 Å Ã @ DI G à ` G 7 H @ T T 6 à @ C U à DI www.irf.com 11 IRL1404Z/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. 12 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 2/04 www.irf.com