IRL2203NL

PD - 94394 HEXFET® Power MOSFET l l l l l l IRL2203NS IRL2203NL VDSS = 30V RDS(on) = 7.0mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 116A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications. D2Pak IRL2203NS TO-262 IRL2203NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 116‡ 82 400 3.8 180 1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient(PCB Mounted,steady-state)ˆ Typ. ––– ––– Max. 0.85 40 Units °C/W www.irf.com 1 02/18/02 IRL2203NS/IRL2203NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Min. 30 ––– ––– ––– 1.0 73 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 7.0 VGS = 10V, ID = 60A „ mΩ 10 VGS = 4.5V, ID = 48A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 60A„ 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 16V nA -100 VGS = -16V 60 ID = 60A 14 nC VDS = 24V 33 VGS = 4.5V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 60A ––– RG = 1.8Ω ––– VGS = 4.5V, See Fig. 10 „ Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3290 ––– VGS = 0V 1270 ––– VDS = 25V 170 ––– pF ƒ = 1.0MHz, See Fig. 5 1320…290† mJ IAS = 60A, L = 0.16mH Typ. ––– 0.029 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 160 23 66 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 116‡ showing the A G integral reverse ––– ––– 400 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V „ ––– 56 84 ns TJ = 25°C, IF = 60A ––– 110 170 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL2203NS/IRL2203NL 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 100  VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 2.7V 10 10 2.7V 1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 1 0.1 20µs PULSE WIDTH  T = 175 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 100A  TJ = 25 ° C  TJ = 175 ° C  RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 1.5 100 1.0 0.5 10 2.0  V DS = 15V 20µs PULSE WIDTH 5.0 6.0 3.0 4.0 7.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL2203NS/IRL2203NL 6000 VGS , Gate-to-Source Voltage (V) 5000  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 60A  12  VDS = 24V VDS = 15V C, Capacitance (pF) 4000 Ciss  3000 9 2000 C oss 6 1000 3 C rss 0 1 10 100 0 0 20  FOR TEST CIRCUIT SEE FIGURE 13 60 40 80 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS (on) TJ = 175  °C ISD , Reverse Drain Current (A) 100 10 ID , Drain-to-Source Current (A) 1000 100 100µsec 1msec 1 TJ = 25 ° C  10 Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec 0.1 0.0 V GS = 0 V  0.4 0.8 1.2 1.6 2.0 2.4 1 VSD ,Source-to-Drain Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL2203NS/IRL2203NL 120  LIMITED BY PACKAGE 100 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 80 -VDD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001  P DM t1 t2 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL2203NS/IRL2203NL 600 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 500 VD S L D R IV E R  TOP BOTTOM ID 24A 42A 60A 400 RG VGS 20V D .U .T IA S tp 0 .0 1 Ω + - VD D A 300 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL2203NS/IRL2203NL Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL2203NS/IRL2203NL D2Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 8 www.irf.com IRL2203NS/IRL2203NL TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 9 IRL2203NS/IRL2203NL D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.16 1 ) 3.9 0 (.15 3 ) 1 .6 0 (.06 3) 1 .5 0 (.05 9) 0 .3 68 (.0 14 5) 0 .3 42 (.0 13 5) F EE D D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1.60 (.45 7) 1 1.40 (.44 9) 1 5.42 (.6 09) 1 5.22 (.6 01) 24.30 (.95 7) 23.90 (.94 1) TR L 10.90 (.42 9) 10.70 (.42 1) 1 .7 5 (.069 ) 1 .2 5 (.049 ) 1 6.10 (.6 34 ) 1 5.90 (.6 26 ) 4.7 2 (.13 6) 4.5 2 (.17 8) F E ED D IRE C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M AX. 60.00 (2.362) M IN. NO TES : 1. CO MF OR MS TO EIA-418. 2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER . 3. DIM ENS ION M EASUR ED @ HU B. 4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E. 30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961) 4 3 Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/02 10 www.irf.com