IRL2203NLPBF

PD - 95219 IRL2203NSPbF IRL2203NLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications. D2Pak IRL2203NS TO-262 IRL2203NL Absolute Maximum Ratings Symbol Parameter Max 116 ‡ 82 400 3.8 180 1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case) A W W W/°C V A mJ V/ns °C Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  IDM PD @TA = 25°C Power Dissipation PD @TC = 25°C Power Dissipation VGS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJC RθJA Junction-to-Case ‰ Parameter Typ ––– ––– Max 0.85 40 Units °C/W Junction-to-Ambient (PCB mount, steady state) ˆ‰ www.irf.com 1 04/27/04 IRL2203NS/LPbF Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy ‚ Min 30 ––– ––– ––– 1.0 73 ––– ––– ––– ––– ––– ––– ––– 0.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ ––– 0.029 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 160 23 66 4.5 7.5 3290 1270 Max Units ––– ––– 7.0 10 3.0 ––– 25 250 100 -100 60 14 33 3.0 ––– ––– ––– ––– ––– Nh ––– ––– ––– pF mJ Ω VDD = 15V ID = 60A RG = 1.8Ω nC V S µA nA V Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 60A „ VGS = 4.5V, ID = 48A „ VDS = VGS, ID = 250µA VDS = 25V, ID = 60A „ VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 60A VDS = 24V VGS = 4.5V, See Fig. 6 and 13 V/°C Reference to 25°C, ID = 1mA VGS = 4.5V, See Fig. 10 „ Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 IAS = 60A, L = 0.16mH 170 ––– ––– 1320 … 290 † Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min ––– ––– ––– ––– ––– Typ ––– ––– ––– 56 110 Max Units 116 ‡ 400 1.2 84 170 V ns nC A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 60A, VGS = 0V „ TJ = 25°C, IF = 60A di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ approximately 90°C 2 www.irf.com IRL2203NS/LPbF 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A)  VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 1000 100  VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP 2.7V 10 10 2.7V 1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 1 0.1 20µs PULSE WIDTH  T = 175 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 100A  TJ = 25 ° C  TJ = 175 ° C  RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 1.5 100 1.0 0.5 10 2.0  V DS = 15V 20µs PULSE WIDTH 5.0 6.0 3.0 4.0 7.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL2203NS/LPbF 6000 VGS , Gate-to-Source Voltage (V) 5000  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 60A  12  VDS = 24V VDS = 15V C, Capacitance (pF) 4000 Ciss  3000 9 2000 C oss 6 1000 3 C rss 0 1 10 100 0 0 20  FOR TEST CIRCUIT SEE FIGURE 13 60 40 80 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175  °C ID , Drain-to-Source Current (A) 1000 10 100 100µsec 1msec 1 TJ = 25 ° C  10 Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec 0.1 0.0 V GS = 0 V  0.4 0.8 1.2 1.6 2.0 2.4 1 VSD ,Source-to-Drain Voltage (V) 100 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL2203NS/LPbF 120  LIMITED BY PACKAGE 100 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 80 -VDD VGS 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001  P DM t1 t2 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL2203NS/LPbF 600 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 500 VD S L D R IV E R  TOP BOTTOM ID 24A 42A 60A 400 RG VGS 20V D .U .T IA S tp 0 .0 1 Ω + - VD D A 300 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL2203NS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL2203NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H I S IS AN IR F 53 0 S WIT H L OT COD E 8 02 4 AS S E MB L E D ON WW 0 2 , 2 00 0 IN T H E AS S E MB L Y L IN E "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S D AT E COD E YE AR 0 = 200 0 WE E K 02 L IN E L OR INT E R NAT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S DAT E COD E P = DE S IGNAT E S L E AD -F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E 8 www.irf.com IRL2203NS/LPbF TO-262 Package Outline TO-262 Part Marking Information E XAMP L E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRL2203NS/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 0 .3 6 8 ( .0 1 4 5 ) 0 .3 4 2 ( .0 1 3 5 ) F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 ( .4 5 7 ) 1 1 .4 0 ( .4 4 9 ) 1 5 .4 2 ( .6 0 9 ) 1 5 .2 2 ( .6 0 1 ) 2 4 .3 0 ( .9 5 7 ) 2 3 .9 0 ( .9 4 1 ) TRL 1 0 .9 0 ( .4 2 9 ) 1 0 .7 0 ( .4 2 1 ) 1 .7 5 ( .0 6 9 ) 1 .2 5 ( .0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 ( .1 3 6 ) 4 .5 2 ( .1 7 8 ) F E E D D IR E C T IO N 1 3 .5 0 (.5 3 2 ) 1 2 .8 0 (.5 0 4 ) 2 7 .4 0 (1 .0 7 9 ) 2 3 .9 0 (.9 4 1 ) 4 330.00 (1 4.17 3) M AX. 6 0 .0 0 (2 .3 6 2) M IN . NOTES : 1 . C O M F O R M S T O E IA -4 1 8 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0 .4 0 (1 .1 9 7 ) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/