IRL2203S

PRELIMINARY PD 9.1091A IRL2203S HEXFET® Power MOSFET l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D VDSS = 30V RDS(on) = 0.007Ω G ID = 100A… S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current † Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dtƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 100… 71 400 3.8 130 0.83 ± 20 390 60 13 1.2 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter Rθ JC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 1.2 40 Units °C/W IRL2203S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LS Ciss Coss Crss Min. 30 ––– ––– ––– 1.0 47 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.035 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 15 210 29 54 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA† 0.007 VGS = 10V, ID = 60A „ 0.01 VGS = 4.5V, ID = 50A „ 2.5 V VDS = VGS, ID = 250µA ––– S VDS = 25V, I D = 60A † 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 110 I D = 60A 31 nC VDS = 24V 57 VGS = 4.5V, See Fig. 6 and 13 „ † ––– VDD = 15V ––– I D = 60A ns ––– RG = 1.8Ω, VGS = 4.5V ––– RD = 0.25Ω, See Fig. 10 „† Between lead, 7.5 nH ––– and center of die contact 3500 ––– VGS = 0V 1400 ––– pF VDS = 25V 690 ––– ƒ = 1.0MHz, See Fig. 5 † Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– 100… A ––– ––– 94 280 400 1.3 140 410 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 60A, VGS = 0V „ TJ = 25°C, IF = 60A di/dt = 100A/µs „† D S  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 ‚ VDD = 15V, starting TJ = 25°C, L = 220µH RG = 25Ω, IAS = 60A. (See Figure 12) ƒ ISD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C † Uses IRL2203N data and test conditions. ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. IRL2203S 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , D ra in -to -S o u rce C u rre n t (A ) ID , D ra in -to -S o u rce C u rre n t (A ) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 100 10 10 2 .5V 2.5 V 2 0µ s PU L SE W ID TH T J = 2 5°C 0.1 1 10 1 A 1 0.1 1 2 0µ s PU L SE W ID TH T J = 1 75 °C 10 A 100 100 V D S , Drain-to-S ource Voltage (V ) V D S , Drain-to-S ource Voltage (V ) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, T J = 175oC 1000 2.0 T J = 2 5 °C 100 R DS (on ) , Drain-to-S ource O n Resistance ( Norm alized) I D = 1 00 A I D , D r ain- to-S ourc e C urre nt (A ) 1.5 T J = 1 75 °C 1.0 10 0.5 1 2.0 3.0 4.0 5.0 V DS = 1 5 V 2 0 µ s P U L SE W ID TH 6.0 7.0 8.0 9.0 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V A 100 120 140 160 180 V G S , Ga te-to-S o urce V oltage (V ) T J , Junction Tem perature (°C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL2203S 8000 C , C a p a c ita n c e (p F ) 6000 C is s C os s V G S , Gate-to-Source Voltage ( V) V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d 15 I D = 60A V D S = 24 V V D S = 15 V 12 9 4000 6 Crs s 2000 3 0 1 10 100 A 0 0 30 60 F OR TE ST CIR C UIT SEE FIGU RE 1 3 A 90 120 150 V D S , Drain-to-Source V oltage (V) Q G , T otal G ate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R e v e rse D ra in C u rre n t (A ) O PER ATIO N IN TH IS AR EA L IM ITED BY R DS (o n) 10 µs TJ = 25 °C TJ = 17 5°C 100 I D , D ra in C u rre n t (A ) 100 10 0µs 1m s 10 10m s 10 0.5 1.0 1.5 2.0 2.5 VG S = 0 V 3.0 A 1 1 T C = 2 5 °C T J = 17 5°C S ing le Pulse 10 100 A 3.5 V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL2203S VDS 100 RD L IM ITED BY PAC KA GE VGS RG D.U.T. + 80 I D , D ra in C u rre n t (A m p s) -VDD 5.0V 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 A 175 TC , C ase T em perature (°C ) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms T her m al R e spon se ( Z th J C ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 S INGLE PULS E ( THER MAL R ESP ONS E) 0.01 0.00001 0.0001 0.001 0.01 P DM t 1 t2 Notes : 1. D uty fac tor D = t 1 /t 2 2. P ea k TJ = P D M x Z thJ C + T C A 10 0.1 1 t 1 , R ectan gular P ulse D u ration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL2203S 1000 E A S , S in g le P u lse A va la n c h e E n e rg y (m J ) TO P 800 1 5V B OTTO M ID 24 A 4 2A 60 A VD S L D R IV E R RG 20 V D .U .T IA S tp 0 .0 1 Ω + - VDD 600 5.0 V A 400 Fig 12a. Unclamped Inductive Test Circuit V (BR )D SS tp 200 0 25 VD D = 1 5V 50 75 100 125 150 A 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRL2203S Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRL2203S Package Outline — D2Pak Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 1.40 ( .055) M AX. -A2 4.69 (.185) 4.20 (.165) -B1.32 ( .052) 1.22 ( .048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 ( .208) 4.78 ( .188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BA M 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIM UM RE CO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENSIO NS AF T ER S OLDE R DIP. 2 DIM ENSIO NING & TO LERAN CING PER ANS I Y14.5M, 1982. 3 CO NTRO LLING DIME NS IO N : INC H. 4 HE AT SINK & LE AD D IM ENS IONS DO NO T INCLUDE B UR RS . LEA D AS SIG NMEN TS 1 - GA TE 2 - DRAIN 3 - SO URCE 8.89 ( .350) 17.78 ( .700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking E X AM PL E : T H IS I S A N IR F1 010 E X A M P L E : THIT H ISS S E MB LY5 30 S W IS A A N IR F L OT CO D E E M B LY W ITH A S S 9 B1M L O T C O D E 9B 1 M A I NT E RN A TIO N AL IN TE R N A TIO N A L R E C TIF IE R IRF 10 10 R E C T IF IE R LOG O F 53 92460 S LOG O 9B 1 M9 2 4 6 A SS E MB LY 9B 1M LOTS S C OD E Y A EM BL P AR T NU M BE R A P A RT N U MB E R LOT CO DE D A TE D A TEE C O D E C OD (Y YW W ) (Y Y W W ) Y Y = YE A R YY = YE AR W W = W EE K W W = W E EK IRL2203S Tape & Reel — D2Pak Dimensions are shown in millimeters (inches) TR R 1 .60 (.063 ) 1 .50 (.059 ) 4.10 ( .16 1) 3.90 ( .15 3) 1 . 6 0 (. 0 6 3 ) 1 . 5 0 (. 0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D IR E C T IO N 1 .85 ( .07 3) 1 .65 ( .06 5) 1 1 . 6 0 (. 4 5 7 ) 1 1 . 4 0 (. 4 4 9 ) 1 5 . 4 2 (. 6 0 9 ) 1 5 . 2 2 (. 6 0 1 ) 2 4 . 3 0 (. 9 5 7 ) 2 3 . 9 0 (. 9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 1 3 . 50 (.5 3 2 ) 1 2 . 80 (.5 0 4 ) 2 7 .4 0 (1 . 07 9 ) 2 3 .9 0 (. 9 41 ) 4 330.00 (14.173) MAX. 60 .0 0 (2. 3 6 2) M IN . NOTES : 1. C O M F O R M S T O E IA -4 1 8. 2. C O N T R O L LI N G D I M E N S IO N : M IL L IM E T E R . 3. D IM E N S I O N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 26.40 (1.039) 24.40 (.961) 3 0 . 40 (1 .1 9 7) MAX. 4 3 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96