IRL2505SPBF

Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET Power MOSFET D IRL2505LPbF IRL2505SPbF ® VDSS = 55V RDS(on) = 0.008Ω PD - 95577 G ID = 104A† S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2505L) is available for lowprofile applications. D 2 Pak TO-262 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current  … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ … Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 104† 74 360 3.8 200 1.3 ±16 500 54 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 0.75 40 Units °C/W 07/19/04 www.irf.com 1 IRL2505S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) V GS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 ––– ––– ––– ––– 1.0 59 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.035 ––– V/°C Reference to 25°C, ID = 1mA… ––– 0.008 VGS = 10V, ID = 54A „ ––– 0.010 Ω VGS = 5.0V, ID = 54A „ ––– 0.013 VGS = 4.0V, ID = 45A „ ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 54A… ––– 25 VDS = 55V, VGS = 0V µA ––– 250 VDS = 44V, VGS = 0V, T J = 150°C ––– 100 VGS = 16V nA ––– -100 VGS = -16V ––– 130 ID = 54A ––– 25 nC VDS = 44V ––– 67 VGS = 5.0V, See Fig. 6 and 13 „ … 12 ––– VDD = 28V 160 ––– ID = 54A ns 43 ––– RG = 1.3Ω, VGS = 5.0V 84 ––– RD = 0.50Ω, See Fig. 10 „ … Between lead, 7.5 ––– nH and center of die contact 5000 ––– VGS = 0V 1100 ––– pF VDS = 25V 390 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton P arameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 104† showing the A G integral reverse ––– ––– 360 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V „ ––– 140 210 ns TJ = 25°C, IF = 54A ––– 650 970 nC di/dt = 100A/µs „ … Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 240µH RG = 25Ω, IAS = 54A. (See Figure 12) ƒ ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRL2505 data and test conditions † Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL2505S/LPbF 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 2.5V 10 10 2.5V 20µs PULSE WIDTH T J = 25°C 1 10 1 0.1 A 100 1 0.1 20µs PULSE WIDTH T J = 175°C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 90A I D , Drain-to-Source Current (A) TJ = 25°C 100 2.5 TJ = 175°C 2.0 1.5 10 1.0 0.5 1 2.5 3.5 4.5 V DS= 25V 20µs PULSE WIDTH 5.5 6.5 7.5 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL2505S/LPbF 10000 8000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 15 I D = 54A VDS = 44V VDS = 28V 12 C, Capacitance (pF) Ciss 6000 9 4000 Coss 6 2000 Crss A 1 10 100 3 0 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 A 200 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10µs I D , Drain Current (A) 100 100µs 100 TJ = 175°C TJ = 25°C 1ms 10 10ms 10 0.4 0.8 1.2 1.6 2.0 VGS = 0V 2.4 A 1 1 TC = 25°C TJ = 175°C Single Pulse 10 A 100 2.8 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL2505S/LPbF 120 LIMITED BY PACKAGE 100 V GS RG 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + ID , Drain Current (A) -V DD 80 60 40 Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL2505S/LPbF L VDS D.U.T. RG + V - DD 10 V EAS , Single Pulse Avalanche Energy (mJ) 1200 TOP 1000 BOTTOM ID 22A 38A 54A 800 IAS tp 0.01Ω 600 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 400 200 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL2505S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRL2505S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S E MBL E D ON WW 02, 2000 IN T H E AS S E MB LY L INE "L" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IE R LOGO PART NUMB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L AS S E MB LY LOT CODE OR INT ERNAT IONAL RECT IF IER L OGO AS S EMB LY LOT CODE PART NUMB ER F 530S DAT E CODE P = DES IGNAT E S LEAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMB LY S IT E CODE 8 www.irf.com IRL2505S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL E: T HIS IS AN IRL3103L L OT CODE 1789 AS S E MB L ED ON WW 19, 1997 IN T HE AS S E MB L Y LINE "C" Note: "P" in as sembly line pos ition indicates "L ead-F ree" INT ERNAT IONAL RE CT IF IER L OGO AS S EMB LY L OT CODE PART NUMB ER DAT E CODE YE AR 7 = 1997 WEE K 19 LINE C OR INT E RNAT IONAL RE CT IFIE R L OGO AS S E MBL Y LOT CODE PART NUMBE R DAT E CODE P = DES IGNAT ES L E AD-F RE E PRODUCT (OPT IONAL) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRL2505S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com