IRL2910

PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS(on) = 0.026Ω G ID = 55A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current… Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 55 39 190 200 1.3 ± 16 520 29 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.75 ––– 62 Units °C/W °C/W °C/W 5/13/98 IRL2910 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.026 VGS = 10V, ID = 29A „ 0.030 Ω VGS = 5.0V, ID = 29A „ 0.040 VGS = 4.0V, ID = 24A „ 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 29A 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 29A 20 nC VDS = 80V 81 VGS = 5.0V, See Fig. 6 and 13 „ ––– VDD = 50V ––– ID = 29A ns ––– RG = 1.4Ω, VGS = 5.0V ––– RD = 1.7Ω, See Fig. 10 „ Between lead, ––– 4.5 ––– 6mm (0.25in.) nH from package G ––– 7.5 ––– and center of die contact ––– 3700 ––– VGS = 0V ––– 630 ––– pF VDS = 25V ––– 330 ––– ƒ = 1.0MHz, See Fig. 5 Min. 100 ––– ––– ––– ––– 1.0 28 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 100 49 55 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 55 showing the A G integral reverse ––– ––– 190 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „ ––– 240 350 ns TJ = 25°C, IF = 29A ––– 1.8 2.7 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 1.2mH RG = 25Ω, IAS = 29A. (See Figure 12) ƒ ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS, „ Pulse width ≤ 300µs; duty cycle ≤ 2%. TJ ≤ 175°C IRL2910 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 1000 ID , Drain-to-Source Current (A ) 100 ID , Drain-to-Source Current (A ) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 10 10 2.5 V 2.5 V 1 0.1 1 2 0 µ s P U LS E W ID TH T J = 2 5°C 10 100 A 1 0.1 1 2 0 µ s P U LS E W ID TH T J = 1 75 °C 10 100 A V D S , D rain-to-S ource V olta g e ( V ) V D S , D rain-to-S ource V olta g e ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = 4 8A I D , D ra in -to-S ourc e C urrent (A) 2.5 100 TJ = 2 5 °C TJ = 1 7 5 °C 2.0 1.5 10 1.0 0.5 1 2.0 2.5 3.0 3.5 4.0 V DS = 50V 2 0 µ s P U L S E W ID T H 4.5 5.0 5.5 6.0 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G a te -to -S o u rc e V o lta g e (V ) T J , Junction T em perature (°C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL2910 6000 5000 V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C i ss C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 15 I D = 29 A V D S = 8 0V V D S = 5 0V V D S = 2 0V 12 C , Capacitance (pF) 4000 9 3000 C o ss 2000 6 C r ss 1000 3 0 1 10 100 A 0 0 40 80 F O R TE S T C IRC UIT S E E FIG U R E 1 3 120 160 A 200 V D S , D rain-to-S ourc e V olta g e ( V ) Q G , T otal G ate C har g e ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R everse Drain C urrent (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) I D , Drain C urrent (A ) 100 10µ s 100 100µ s T J = 1 75 °C T J = 25 °C 10 1m s 10m s 10 0.4 0.8 1.2 1.6 V G S = 0V A 1 1 T C = 2 5 °C T J = 17 5°C S in g le P u lse 10 100 2.0 1000 A V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V olta g e ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL2910 60 VDS 50 RD VGS RG D.U.T. + I D , Drain Current (A) 40 -VDD 5.0V 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL2910 1400 E A S , S ingle P ulse A valanche E nergy (m J) TO P 1200 1 5V B O TTO M 1000 ID 12 A 2 0A 29 A VDS L D R IV E R 800 RG 20V tp D .U .T IA S + V - DD 600 A 0 .0 1 Ω 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 V DD = 25 V 25 50 75 100 125 150 A 175 V (B R )D SS tp S tartin g T J , J unc tion T em perature ( °C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRL2910 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRL2910 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.113 ) 2.62 (.103 ) 10.54 (.415 ) 10.29 (.405 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) -B4.69 (.1 85) 4.20 (.1 65) 1.3 2 (.052) 1.2 2 (.048) 4 15.24 (.600 ) 14.84 (.584 ) 1.15 (.0 45) MIN 1 2 3 L EA D A S SIG N ME NT S 1 - G AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN 14 .09 (.55 5) 13 .47 (.53 0) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1 .40 (.05 5) 1 .15 (.04 5) 0.93 (.037 ) 0.69 (.027 ) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.01 4) 2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER A N SI Y 14 .5 M, 19 82. 2 C O N TRO LLIN G D IME N S IO N : INC H 2 .9 2 (.11 5) 2 .6 4 (.10 4) 3 O U TLIN E C ON F OR MS TO JE DE C O UT LIN E TO -2 20A B . 4 HE A TS INK & LE AD M E AS U RE M E NTS D O N O T IN CL UD E B UR R S. Part Marking Information TO-220AB E XE X A M P L:E THTH IS IS NA N F 1 F1 0 1 0 AMPLE : IS IS A IR IR 0 1 W ITH H SA S S E M B L Y W IT A S E M B L Y L OL O C OC O D E B 9 B 1 M T T D E 9 1M AA IN TE TE R N A TIO N A L IN R N A T IO N A L R ER E C TIFR R C TIFIE IE IR F 1 F 10 1 0 IR 0 L OL O G O GO 9246 46 92 9B 9B 1 M1 M A SA S S E M B L Y SEMBLY L OTO T C OC O D E DE L P AP A R N UN U M B E R RT T MBER D AD A TE OC O D E TE C D E (Y Y W W )W ) (Y Y W Y YY Y Y EY E A R = = AR W W W W E EE E K W = = WK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98