IRL3102PBF

PD- 95658 IRL3102PbF HEXFET® Power MOSFET Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description l D VDSS = 20V RDS(on) = 0.013Ω G S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. ID = 61A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 61 39 240 89 0.71 ± 10 14 220 35 8.9 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.4 ––– 62 Units °C/W 07/30/04 IRL3102PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 ––– ––– ––– 0.70 36 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.015 VGS = 4.5V, ID = 37A „ Ω 0.013 VGS = 7.0V, ID = 37A „ ––– V VDS = VGS , ID = 250µA ––– S VDS = 16V, ID = 35A 25 VDS = 20V, VGS = 0V µA 250 VDS = 10V, V GS = 0V, TJ = 150°C 100 VGS = 10V nA -100 VGS = -10V 58 ID = 35A 14 nC VDS = 16V 21 VGS = 4.5V, See Fig. 6 „ ––– VDD = 10V ––– ID = 35A ns ––– RG = 9.0Ω, VGS = 4.5V ––– RD = 0.28 Ω, „ Between lead, ––– 4.5 ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact ––– 2500 ––– VGS = 0V ––– 1000 ––– pF VDS = 15V ––– 360 ––– ƒ = 1.0MHz, See Fig. 5 Typ. ––– 0.016 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 130 80 110 D S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Notes: P arameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 61 ––– ––– showing the A G integral reverse ––– ––– 240 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V „ ––– 59 88 ns TJ = 25°C, IF = 35A ––– 110 160 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ƒ ISD ≤ 35A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ Starting TJ = 25°C, L = 0.36mH RG = 25Ω, IAS = 35A. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. IRL3102PbF 1000 VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 3.0V 4.0V 3.0V BOTTOM 2.5V BOTTOM 2.5V TOP TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 4.0V 3.0V 3.0V BOTTOM 2.5V BOTTOM 2.5V TOP TOP 100 100 2.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 2.5V 20µs PULSE WIDTH TJ = 150 °C 1 10 100 10 0.1 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C TJ = 150 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 61A I D , Drain-to-Source Current (A) 1.5 100 1.0 10 0.5 1 2 3 4 V DS = 15V 20µs PULSE WIDTH 5 6 7 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL3102PbF 4200 3600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 35A VDS = 16V 12 C, Capacitance (pF) 3000 2400 1800 Ciss 9 Coss 1200 600 0 1 10 100 6 Crss 3 0 0 20 40 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 I D , Drain Current (A) 100 TJ = 150 ° C 100us TJ = 25 ° C 10 1ms 10 10ms 1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL3102PbF 70 500 EAS , Single Pulse Avalanche Energy (mJ) TOP 400 60 BOTTOM ID 16A 22A 35A ID , Drain Current (A) 50 40 30 20 10 0 25 50 75 100 125 150 300 200 100 0 25 50 75 100 125 150 TC , Case Temperature ( °C) Starting TJ , Junction Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL3102PbF R DS (on), Drain-to-Source On Resistance( Ω ) RDS(on), Drain-to-Source On Resistance ( Ω ) 0.015 0.020 0.014 0.018 VGS = 4.5V 0.013 0.016 0.014 0.012 0.012 ID = 61A 0.011 VGS = 7.0V 0.010 0.010 0 20 40 60 80 0.008 0 2 4 6 8 10 A I D , Drain Current (A) V GS , Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage IRL3102PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T H E AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" AS S E MB L Y L OT CODE DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04