IRL3202

PD 9.1695A PRELIMINARY l l l l IRL3202 HEXFET® Power MOSFET D Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching G VDSS = 20V RDS(on) = 0.016W S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. ID = 48A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 48 30 190 69 0.56 ± 10 14 270 29 6.9 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V mJ A mJ V/ns °C Thermal Resistance Parameter RqJC RqCS RqJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.8 ––– 62 Units °C/W 11/18/97 IRL3202 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 ––– ––– ––– 0.70 28 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.029 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 9.8 100 63 82 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.019 VGS = 4.5V, ID = 29A „ W 0.016 VGS = 7.0V, ID = 29A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 16V, ID = 29A 25 VDS = 20V, VGS = 0V µA 250 VDS = 10V, VGS = 0V, TJ = 150°C 100 VGS = 10V nA -100 VGS = -10V 43 ID = 29A 12 nC VDS = 16V 13 VGS = 4.5V, See Fig. 6 „ ––– VDD = 10V ––– ID = 29A ns ––– RG = 9.5W VGS = 4.5V , ––– RD = 0.3W „ , Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 2000 ––– VGS = 0V 800 ––– pF VDS = 15V 290 ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS I SM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 ––– ––– showing the A G integral reverse ––– ––– 190 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „ ––– 68 100 ns TJ = 25°C, IF = 29A ––– 130 190 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ I £ 29A, di/dt £ 63A/µs, VDD £ V(BR)DSS, SD TJ £ 150°C ‚ Starting TJ = 25°C, L = 0.64mH RG = 25W , IAS = 29A. „ Pulse width £ 300µs; duty cycle £ 2%. IRL3202 1000 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP 1000 100 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP 100 10 2.0V 2.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 48A I D , Drain-to-Source Current (A) 1.5 100 TJ = 150 ° C 1.0 10 0.5 1 2 3 V DS = 15V 20µs PULSE WIDTH 4 5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL3202 3500 3000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15 ID = 29A VDS = 16V 12 C, Capacitance (pF) 2500 Ciss 2000 9 1500 Coss 1000 6 3 500 Crss 0 1 10 100 0 0 10 20 30 40 50 60 70 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 I D , Drain Current (A) 100 TJ = 150 ° C 100us 1ms 10 TJ = 25 ° C 10 10ms 1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL3202 EAS , Single Pulse Avalanche Energy (mJ) 50 600 TOP 500 40 BOTTOM ID 13A 18A 29A I D , Drain Current (A) 400 30 300 20 200 10 100 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Starting T , Junction Temperature( ° C) J Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL3202 R DS (on) , Drain-to-Source On Resistance(W) RDS(on), Drain-to-Source On Resistance ( W ) 0.018 0.025 0.016 VGS = 4.5V 0.020 0.014 VGS = 7.0V 0.012 ID = 4 8A 0.015 0.010 0 10 20 30 40 50 60 0.010 0.0 2.0 4.0 6.0 8.0 A I D , Drain Current (A) V G S , G ate-to-Source V olta g e (V ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage IRL3202 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048) 4 15.24 (.60 0) 14.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.55 5) 13.47 (.53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 (.0 55) 1 .15 (.0 45) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M A IN TE R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LOT CODE PART NUMBER IR F 1 0 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97