IRL3502

PD 9.1698A PRELIMINARY l l l l IRL3502 HEXFET® Power MOSFET D Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching G VDSS = 20V RDS(on) = 0.007Ω S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ID = 110A… TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 110… 67 420 140 1.1 ± 10 14 390 64 14 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.89 ––– 62 Units °C/W 11/17/97 IRL3502 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 20 ––– ––– ––– 0.70 77 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.008 VGS = 4.5V, ID = 64A „ Ω 0.007 VGS = 7.0V, ID = 64A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 64A 25 VDS = 20V, VGS = 0V µA 250 VDS = 10V, VGS = 0V, TJ = 150°C 100 VGS = -10V nA -100 VGS = 10V 110 ID = 64A 27 nC VDS = 16V 39 VGS = 4.5V, See Fig. 6 „ ––– VDD = 10V ––– ID = 64A ns ––– RG = 3.8Ω, VGS = 4.5V ––– RD = 0.15Ω, „ Between lead, ––– 4.5 ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact ––– 4700 ––– VGS = 0V ––– 1900 ––– pF VDS = 15V ––– 640 ––– ƒ = 1.0MHz, See Fig. 5 Typ. ––– 0.019 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 10 140 96 130 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 110… showing the A G integral reverse ––– ––– 420 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V „ ––– 87 130 ns TJ = 25°C, IF = 64A ––– 200 310 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 ‚ Starting TJ = 25°C, L = 190µH RG = 25Ω, IAS = 64A. ƒ I ≤ 64A, di/dt ≤ 86A/µs, VDD ≤ V(BR)DSS, SD TJ ≤ 150°C IRL3502 1000 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 100 2.25V 2.25V 10 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = 25 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 110A I D , Drain-to-Source Current (A) 1.5 TJ = 150 ° C 100 1.0 0.5 10 2 3 4 V DS = 15V 20µs PULSE WIDTH 5 6 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL3502 8000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15 ID = 64A VDS = 16V 12 C, Capacitance (pF) 6000 Ciss 9 4000 Coss 2000 6 Crss 0 1 10 100 3 0 0 40 80 120 160 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us TJ = 150 ° C I D , Drain Current (A) 100us 100 100 TJ = 25 ° C 1ms 10 0.5 V GS = 0 V 1.0 1.5 2.0 2.5 10 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL3502 120 800 LIMITED BY PACKAGE 100 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 600 ID 29A 40A 64A I D , Drain Current (A) 80 60 400 40 200 20 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Starting TJ , Junction Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL3502 RDS (on) Drain-to-Source On Resistance ( Ω ) RDS (on) Drain-to-Source On Resistance ( Ω ) 0.014 0.010 0.012 0.008 0.010 0.008 I D = 6 4A 0.006 VG S = 4 .5V 0.006 VG S = 7 .0V 0.004 0 100 200 300 400 A 0.004 2.0 3.0 4.0 5.0 6.0 7.0 8.0 A I D , D rain C urrent ( A ) V G S , G ate-to-Source Volta g e (V ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage IRL3502 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048) 4 15.24 (.60 0) 14.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.55 5) 13.47 (.53 0) 4.06 (.160) 3.55 (.140) 3X 3X 1 .40 (.0 55) 1 .15 (.0 45) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB EXAMP : TH IS N 1 0 1 0 E X A M P L E :L ETH IS IS A N AIR F IR F 1 0 1 0 W A ASSEMB W ITH ITHS S E M B L Y L Y L C CO B M L O T O TO D E D9E 19 B 1 M A A IN TE R N A N A N IN TE R N A T IO T IOL A L RECT R R E C TIF IEIF IE R IR F IR F 1 0 1 0 1010 L LOGO GO 9 2 49 2 4 6 6 9 B 9 B1 M 1 M ASSEMB ASSEMBLY LY L C CO LOT OT ODE DE PA N NUMB P A R T R TU M B E R E R DA C CO D A TE TEO D E D E (Y Y(Y Y W W ) WW) Y Y Y Y Y= A R A R = E YE W W W E WK E K WW = = E E WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97