IRL3705ZLPBF

PD - 95579 AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF HEXFET® Power MOSFET D VDSS = 55V G S RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB IRL3705Z D2Pak IRL3705ZS TO-262 IRL3705ZL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. 86 61 75 340 130 0.88 ± 16 120 180 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A ™ d Ù h W W/°C V mJ A mJ °C g Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient i 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Typ. Max. 1.14 ––– 62 40 Units °C/W i i ––– 0.50 ––– ––– Junction-to-Ambient (PCB Mount) j www.irf.com 1 07/20/04 IRL3705Z/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– ––– ––– 1.0 150 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.055 6.5 ––– ––– ––– ––– ––– ––– ––– ––– 40 12 21 17 240 26 83 4.5 7.5 2880 420 220 1500 330 510 ––– ––– 8.0 11 12 3.0 ––– 20 250 200 -200 60 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 52A mΩ VGS = 5.0V, ID = 43A VGS = 4.5V, ID = 30A V VDS = VGS, ID = 250µA V VDS = 25V, ID = 52A µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 16V VGS = -16V ID = 43A nC VDS = 44V VGS = 5.0V VDD = 28V ns ID = 43A RG = 4.3 Ω VGS = 5.0V e e e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V D G S ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 16 7.4 75 A 340 1.3 24 11 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù p-n junction diode. TJ = 25°C, IS = 52A, VGS = 0V TJ = 25°C, IF = 43A, VDD = 28V di/dt = 100A/µs e S e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRL3705Z/S/LPbF 1000 TOP VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V 1000 TOP VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V ID, Drain-to-Source Current (A) 100 10 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 1 2.8V 0.1 10 2.8V ≤60µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 1 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α ) T J = 175°C 100 100 T J = 25°C 80 10 60 T J = 175°C 40 1 TJ = 25°C VDS = 15V ≤60µs PULSE WIDTH 20 V DS = 8.0V 0 0 20 40 60 80 100 120 0.1 0 2 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage (V) ID,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRL3705Z/S/LPbF 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = Cds + C gd 6.0 ID= 52A VGS, Gate-to-Source Voltage (V) 5.0 VDS= 44V VDS= 28V VDS= 11V C, Capacitance(pF) 10000 4.0 Ciss 3.0 1000 Coss Crss 2.0 1.0 100 1 10 100 0.0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100.00 100 100µsec 10 Tc = 25°C Tj = 175°C Single Pulse 1 1 10 1msec 10msec 100 1000 10.00 T J = 25°C VGS = 0V 1.00 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3705Z/S/LPbF 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 90 80 ID, Drain Current (A) Limited By Package ID = 43A VGS = 5.0V 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ Ri (°C/W) 0.5413 0.5985 τi (sec) 0.000384 0.002778 τ1 τ2 0.01 Ci= τi/Ri Ci= i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3705Z/S/LPbF 500 EAS , Single Pulse Avalanche Energy (mJ) 15V VDS L DRIVER 400 ID 5.7A 8.5A BOTTOM 52A TOP RG 20V VGS D.U.T IAS tp + V - DD 300 A 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 3.0 2.5 Charge 2.0 Fig 13a. Basic Gate Charge Waveform ID = 250µA 1.5 L VCC 0 1.0 DUT 0.5 1K -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRL3705Z/S/LPbF 100 Duty Cycle = Single Pulse 0.01 Avalanche Current (A) 10 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 150 EAR , Avalanche Energy (mJ) 125 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 52A 100 75 50 25 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRL3705Z/S/LPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRL3705Z/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS HEXFET GATE 1LEAD ASSIGNMENTS IGBTs, CoPACK 1234GATE COLLECTOR EMITTER COLLECTOR 14.09 (.555) 13.47 (.530) 21- GATE DRAIN 32- DRAINSOURCE 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IRF 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com 9 IRL3705Z/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T HE AS S E MB L Y L INE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MBL Y L OT CODE PAR T NU MB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL RE CT IF IE R L OGO PART NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F RE E PRODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE AS S E MB LY L OT CODE 10 www.irf.com IRL3705Z/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IER LOGO AS S E MB LY LOT CODE PART NUMB ER DAT E CODE YE AR 7 = 1997 WE E K 19 LINE C OR INT E RNAT IONAL RE CT IF IER LOGO AS S E MB LY LOT CODE PART NUMBE R DAT E CODE P = DE S IGNAT E S LEAD-F RE E PRODU CT (OPT IONAL) YE AR 7 = 1997 WE E K 19 A = AS S E MB LY S IT E CODE www.irf.com 11 IRL3705Z/S/LPbF TRR D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957 ) 23.90 (.941 ) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.09mH † This value determined from sample failure population. 100% RG = 25Ω, IAS = 52A, VGS =10V. Part not tested to this value in production. recommended for use above this value. ‡ This is only applied to TO-220AB pakcage. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR„ Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . ‰ Rθ is measured at TJ of approximately 90°C.  Repetitive rating; pulse width limited by TO-220AB package is not recommended for Surface Mount Application. Notes: Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/