IRL3713S

PD - 94184D SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l IRL3713 IRL3713S IRL3713L HEXFET® Power MOSFET RDS(on) max (mW) 3.0@VGS = 10V VDSS 30V ID 260A† Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3713 D2Pak IRL3713S TO-262 IRL3713L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @Tc = 100°C TJ, TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max 30 Units V V A c h 180h 1040h 260 330 170 2.2 -55 to +175 ± 20 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range W W/°C °C Thermal Resistance Symbol RθJC RqCS RθJA RθJA Parameter Junction-to-Case i Typ Max 0.45 ––– 62 40 Units Case-to-Sink, Flat, Greased Surface Junction-to-Ambient fi f ––– 0.50 ––– ––– °C/W Junction-to-Ambient (PCB Mount) gi Notes  through ‡ are on page 11 www.irf.com 1 11/12/03 IRL3713/S/L Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/ ∆TJ RDS(on) VGS(th) IDSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min 30 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– Typ ––– 0.027 2.6 3.3 ––– ––– ––– ––– ––– ––– Max Units ––– ––– 3.0 4.0 2.5 50 20 100 200 -200 nA µA V Conditions VGS = 0V, I D = 250µA VGS = 10V, ID = 38A VGS = 4.5V, I D = 30A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V V/°C Reference to 25°C, I D = 1mA mΩ V e e VDS = VGS, ID = 250µA IGSS Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd QOSS RG td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 76 ––– ––– ––– 0.5 ––– ––– ––– ––– ––– ––– ––– Typ ––– 75 24 37 61 ––– 16 160 40 57 5890 3130 630 Max Units ––– 110 ––– ––– 92 3.4 ––– ––– ––– ––– ––– ––– ––– pF ns Ω VDD = 15V I D = 30A RG = 1.8Ω VGS = 4.5V VGS = 0V VDS = 15V ƒ = 1.0MHz nC S I D = 30A VDS = 15V VGS = 4.5V Conditions VDS = 15V, ID = 30A f VGS = 0V, VDS = 15V e Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Min ––– ––– ––– ––– ––– ––– ––– ––– Typ ––– ––– Max 1530 46 Units mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Typ ––– Max Units 260 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 30A, VR = 0V di/dt = 100A/µs h h A Ùh ––– 1040 0.80 0.68 75 140 78 160 1.3 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge ––– 110 210 120 240 V ns nC ns nC TJ = 125°C, I S = 30A, VGS = 0V e e e e TJ = 125°C, I F = 30A, VR = 20V di/dt = 100A/µs 2 www.irf.com IRL3713/S/L 1000 VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP 100 10 10 2.5V 1 2.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 260A I D , Drain-to-Source Current (A) TJ = 175 ° C 100 1.5 1.0 10 TJ = 25 ° C 0.5 1 2.5 V DS = 15V 20µs PULSE WIDTH 3.0 3.5 4.0 4.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3713/S/L 100000 14 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 30A 12 10 8 6 4 2 0 VDS = 24V VDS = 15V VDS = 6V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 0 40 80 120 160 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 175 ° C ID , Drain Current (A) 1000 10us 10 100us 100 TJ = 25 ° C 1 1ms T C = 25 ° C T J = 175° C 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Single Pulse 10 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3713/S/L 300 LIMITED BY PACKAGE 250 V DS VGS RG RD D.U.T. + I D , Drain Current (A) 200 -VDD 10V 150 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 100 Fig 10a. Switching Time Test Circuit VDS 90% 50 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3713/S/L 15V EAS , Single Pulse Avalanche Energy (mJ) 3000 TOP BOTTOM 2500 VDS L DRIVER ID 30A 38A 46A 2000 RG 20V VGS D.U.T IAS tp + V - DD A 1500 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 1000 500 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 10 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3713/S/L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRL3713/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 L OT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S E MBLY LINE "C" INTERNATIONAL RECTIFIER LOGO LOT CODE PART NUMBER DATE CODE 8 www.irf.com IRL3713/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE PART NUMBER F 530S DAT E CODE www.irf.com 9 IRL3713/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 10 www.irf.com IRL3713/S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220A package ‚ Starting TJ = 25°C, L = 1.4mH RG = 25Ω, IAS = 46A,VGS=10V … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‡ Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/03 www.irf.com 11