IRL3714LPBF

PD - 95580 SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free l IRL3714PbF IRL3714SPbF IRL3714LPbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 20mΩ ID 36A Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3714 D2Pak IRL3714S TO-262 IRL3714L Absolute Maximum Ratings Symbol VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation ƒ Maximum Power Dissipation ƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 36 31 140 47 33 0.31 -55 to + 175 Units V V A W W W/°C °C = 25°C = 70°C = 25°C = 70°C TJ , TSTG Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount) … Typ. ––– 0.50 ––– ––– Max. 3.2 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 07/20/04 IRL3714/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units ––– ––– V 0.022 ––– V/°C 15 20 mΩ 21 28 ––– 3.0 V ––– 20 µA ––– 100 ––– 200 nA ––– -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 18A ƒ VGS = 4.5V, ID = 14A ƒ VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 6.5 1.8 2.9 7.1 8.7 78 10 4.5 670 470 68 Max. Units Conditions ––– S VDS = 10V, ID = 14A 9.7 ID = 14A ––– nC VDS = 10V ––– VGS = 4.5V ––– VGS = 0V, VDS = 10V ––– VDD = 10V ––– ID = 14A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 10V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 72 14 Units mJ A Diode Characteristics Symbol IS I SM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– 36 A ––– 140 ––– ––– ––– ––– ––– ––– ––– 1.3 0.88 ––– 35 53 34 51 35 53 35 53 V ns nC ns nC VSD trr Q rr trr Q rr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V ƒ TJ = 125°C, IS = 18A, VGS = 0V ƒ TJ = 25°C, IF = 18A, VR=10V di/dt = 100A/µs ƒ TJ = 125°C, IF = 18A, VR=10V di/dt = 100A/µs ƒ 2 www.irf.com IRL3714/S/LPbF 10000 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 100 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP 10 10 1 2.0V 1 0.1 2.0V 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 175°C 0.1 100 0.01 0.1 1 10 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.5 I D = 36A ID, Drain-to-Source Current (Α ) 2.0 T J = 25°C TJ = 175°C 100.00 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 10.00 0.5 VDS = 15V 20µs PULSE WIDTH 1.00 2.0 4.0 6.0 8.0 10.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3714/S/LPbF 10000 15 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + Cgd ds VGS , Gate-to-Source Voltage (V) ID = 14 VDS = 16V VDS = 10V 12 C, Capacitance(pF) 1000 Ciss Coss 9 6 100 Crss 3 10 1 10 100 0 0 4 8 12 16 20 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 1msec 10.00 1.00 T J = 25°C 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 10msec VGS = 0V 0.10 0.0 1.0 2.0 3.0 VSD, Source-toDrain Voltage (V) 100 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3714/S/LPbF 40 V DS V GS RD 30 RG 4.5V D.U.T. + -V DD I D , Drain Current (A) 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1 Thermal Response J = P DM x Z thJC 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3714/S/LPbF 150 15V ID TOP 120 5.9A 10A 14A E AS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER BOTTOM RG 20V D.U.T IAS tp + V - DD 90 A 0.01Ω 60 Fig 12a. Unclamped Inductive Test Circuit 30 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( °C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 4.5 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3714/S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRL3714/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" INT E R NAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 8 www.irf.com IRL3714/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IR F530S WITH LOT CODE 8024 AS S E MBL ED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E RNATIONAL RE CT IF IER LOGO AS S EMBL Y L OT CODE PAR T NUMB E R F 530S DAT E CODE YEAR 0 = 2000 WEE K 02 L INE L OR INT ERNAT IONAL RECT IF IE R L OGO AS S E MB LY LOT CODE PART NUMB ER F 530S DAT E CODE P = DES IGNAT ES L EAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMB LY S IT E CODE www.irf.com 9 IRL3714/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE : T HIS IS AN IRL 3103L LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MBL Y L INE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RE CT IF IE R L OGO AS S E MBL Y L OT CODE PART NUMB ER DAT E CODE YEAR 7 = 1997 WE EK 19 L INE C OR INT E RNAT IONAL RE CT IF IE R L OGO AS S E MBL Y L OT CODE PART NUMB ER DAT E CODE P = DE S IGNAT ES LE AD-F REE PRODUCT (OPT IONAL) YEAR 7 = 1997 WE EK 19 A = AS S E MBL Y S IT E CODE 10 www.irf.com IRL3714/S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) F EED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957 ) 23.90 (.941 ) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) F EED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) M IN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package ‚ Starting TJ = 25°C, L = 0.69 mH RG = 25 Ω, I AS = 14A. … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. These products have been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/