IRL3716S

PD - 94403A SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC IRL3716 IRL3716S IRL3716L HEXFET® Power MOSFET VDSS 20V RDS(on) max 4.0mΩ ID 180A† TO-220AB IRL3716 D2Pak IRL3716S TO-262 IRL3716L Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation ƒ Maximum Power Dissipation ƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 180† 130 720 210 100 1.4 -55 to + 175 Units V V A W W W/°C °C = 25°C = 100°C = 25°C = 100°C TJ , TSTG Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case ‡ Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount) … Typ. ––– 0.50 ––– ––– Max. 0.72 ––– 62 40 Units °C/W Notes  through ‡ are on page 11 www.irf.com 1 10/8/04 IRL3716/3716S/3716L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.021 ––– V/°C Reference to 25°C, ID = 1mA 3.0 4.0 VGS = 10V, ID = 90A ƒ mΩ 4.0 4.8 VGS = 4.5V, ID = 72A ƒ ––– 3.0 V VDS = VGS, ID = 250µA ––– 20 VDS = 16V, VGS = 0V µA ––– 250 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 16V nA ––– -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units Conditions 100 ––– ––– S VDS = 10V, ID = 72A ––– 53 79 ID = 72A ––– 17 26 nC VDS = 16V ––– 24 35 VGS = 4.5V ––– 50 75 VGS = 0V, V DS = 10V 1.5 18 140 38 36 5090 3440 560 ––– ––– ––– ––– ––– ––– ––– Ω ns VDD = 10V ID = 72A RG = 3.9Ω VGS = 4.5V ƒ VGS = 0V VDS = 10V ƒ = 1.0MHz pF Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 640 72 Units mJ A Diode Characteristics Symbol IS I SM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 180† ––– 0.93 0.80 180 87 190 85 720 1.3 ––– 280 130 280 130 V ns nC ns nC A VSD trr Q rr trr Q rr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 72A, VGS = 0V ƒ TJ = 125°C, IS = 72A, VGS = 0V ƒ TJ = 25°C, IF = 72A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 72A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRL3716/3716S/3716L 10000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 10000 ID, Drain-to-Source Current (A) 1000 ID, Drain-to-Source Current (A) 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 100 100 2.5V 10 10 2.5V 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.0 I D = 180A ID, Drain-to-Source Current (Α ) T J = 25°C T J = 175°C RDS(on) , Drain-to-Source On Resistance 1.5 100.00 (Normalized) 1.0 0.5 10.00 2.0 3.0 4.0 VDS = 15V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3716/3716S/3716L 100000 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd 10000 VGS , Gate-to-Source Voltage (V) 16 ID = 72A VDS = 16V 12 C, Capacitance(pF) Ciss Coss 8 1000 Crss 4 100 1 10 100 0 0 30 60 90 120 150 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175 ° C 10 T = 25 ° C J ID , Drain-to-Source Current (A) 1000 I SD, Reverse Drain Current (A) 100 100µsec 1msec 10 Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec 1 V GS= 0 V 0.1 0.2 0.8 1.4 2.0 2.6 1 100 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3716/3716S/3716L 180 V DS LIMITED BY PACKAGE RD 150 VGS RG D.U.T. + 120 -VDD I D , Drain Current (A) 4.5V 90 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 Fig 10a. Switching Time Test Circuit VDS 90% 30 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 Thermal Response D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TC 1 J = P DM x Z thJC 0.01 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3716/3716S/3716L 15V 1650 TOP ID 29A 51A 72A RG 20V D.U.T IAS tp EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 1320 BOTTOM + V - DD 990 A 0.01Ω 660 Fig 12a. Unclamped Inductive Test Circuit 330 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF 4.5 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3716/3716S/3716L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRL3716/3716S/3716L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS HEXFET GATE 11234LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2 GATE- DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPLE : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R LOGO AS S E MB LY LOT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 8 www.irf.com IRL3716/3716S/3716L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L ED ON WW 02, 2000 IN T HE AS S E MBL Y L INE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E RNAT IONAL R E CT IFIER L OGO AS S E MBL Y L OT CODE PAR T NUMBE R F 530S DAT E CODE YE AR 0 = 2000 WEE K 02 L INE L OR INT E RNAT IONAL RE CT IF IE R LOGO AS S E MBL Y L OT CODE PART NUMB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F RE E PRODUCT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E CODE www.irf.com 9 IRL3716/3716S/3716L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking InformaEXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S E MB LED ON WW 19, 1997 IN T HE AS S E MBL Y L INE "C" Note: "P" in as sembly line pos ition indicates "L ead-Free" INT E RNAT IONAL RECT IFIER L OGO PART NUMBER AS S EMBL Y L OT CODE DAT E CODE YEAR 7 = 1997 WEE K 19 L INE C OR INT ERNAT IONAL RECT IF IE R LOGO PART NUMBER DAT E CODE P = DES IGNAT E S LE AD-F REE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEE K 19 A = AS S E MB LY S IT E CODE AS S EMB LY L OT CODE 10 www.irf.com IRL3716/3716S/3716L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) F EED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) F EED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. Notes: NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package ‚ Starting TJ = 25°C, L = 0.25mH RG = 25 Ω, I AS = 72A. … This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‡ Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 11