IRL540NL

PD -91535 IRL540NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.044Ω ID = 36A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current  … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ … Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 36 26 120 3.8 140 0.91 ± 16 310 18 14 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 1.1 40 Units °C/W 5/13/98 IRL540NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Min. 100 ––– ––– ––– ––– 1.0 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA … 0.044 VGS = 10V, ID = 18A „ 0.053 Ω VGS = 5.0V, ID = 18A „ 0.063 VGS = 4.0V, ID = 15A „ 2.0 V VDS = V GS, ID = 250µA ––– S V DS = 25V, ID = 18A… 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 74 ID = 18A 9.4 nC VDS = 80V 38 VGS = 5.0V, See Fig. 6 and 13 „ … ––– VDD = 50V ––– ID = 18A ns ––– RG = 5.0Ω, VGS = 5.0V ––– R D = 2.7Ω, See Fig. 10 „ … Between lead, 7.5 ––– nH and center of die contact 1800 ––– VGS = 0V 350 ––– pF VDS = 25V 170 ––– ƒ = 1.0MHz, See Fig. 5… Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 81 39 62 Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) … Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 36 ––– ––– showing the A G integral reverse ––– ––– 120 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ … ––– 190 290 ns TJ = 25°C, IF = 18A ––– 1.1 1.7 µC di/dt = 100A/µs „ … Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRL540N data and test conditions ‚ Starting TJ = 25°C, L = 1.9mH TJ ≤ 175°C RG = 25Ω, IAS = 18A. (See Figure 12) ƒ ISD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. IRL540NS/L 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 1000 TOP ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 10 2.5V 2.5V 1 0.1 1 20µs PULSE WIDTH T J = 25°C 10 100 A 1 0.1 1 20µs PULSE WIDTH T J = 175°C 10 100 A V D S , Drain-to-Source Volta g e ( V ) V D S , Drain-to-Source Volta g e ( V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R D S ( o n ) , Drain-to-Source On Resistance (Normalized) I D = 3 0A I D , Drain-to-Source Current (A) 2.5 100 TJ = 25°C TJ = 175°C 2.0 1.5 10 1.0 0.5 1 V D S = 5 0V 20µs PULSE WIDTH 2 4 6 8 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V 100 120 140 160 180 A V G S , Gate-to-Source Volta g e (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL540NS/L 3000 V G S , Gate-to-Source Voltage (V) V G S = 0V, f = 1MHz C iss = C gs+ C gd C SHORTED , ds C rss = C gd C oss = C ds+ C gd 15 I D = 18A V D S = 8 0V V D S = 50V V D S = 20V 12 C, Capacitance (pF) C i ss 2000 9 6 1000 C o ss C r ss 3 0 1 10 100 A 0 0 20 40 F OR TEST CIRCUIT SEE FIGURE 13 60 80 100 A V D S , Drain-to-Source Volta g e ( V ) Q G , Total Gate Char g e ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RD S ( o n ) 100 I D , Drain Current (A) 100 10µs TJ = 175°C T J = 25°C 10 100µs 10 1ms 1 0.4 0.6 0.8 1.0 1.2 1.4 VG S = 0V 1.6 A 1 1 T C = 2 5°C T J = 175°C Sin g le Pulse 10 10ms A 100 1000 1.8 V S D , Source-to-Drain Voltage (V) V D S , Drain-to-Source Volta g e ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRL540NS/L 40 VDS VGS RD D.U.T. + I D , Drain Current (A) 30 RG -VDD 5.0V 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 P DM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRL540NS/L 800 E A S , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 600 1 5V ID 7.3A 13A 18A VD S L D R IV E R RG 10V tp D .U .T IA S + V - DD 400 A 0.0 1 Ω 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 A 175 V (B R )D SS tp Startin g T J , J unction Temperature ( °C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRL540NS/L Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRL540NS/L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK IRL540NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRL540NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. 60.00 (2.3 62) MIN . NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98