IRL5602S

PD- 91888 IRL5602S HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V G S RDS(on) = 0.042W ID = -24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D 2 Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -24 -17 -96 75 0.5 ± 8.0 290 -12 7.5 -0.81 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 2.0 40 Units °C/W www.irf.com 1 5/11/99 IRL5602S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Min. -20 ––– ––– ––– ––– -0.7 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250µA -0.013 ––– V/°C Reference to 25°C, ID = -1mA… ––– 0.042 VGS = -4.5V, ID = -12A „ ––– 0.062 W VGS = -2.7V, ID = -10A „ ––– 0.075 VGS = -2.5V, ID = -10A „ ––– -1.0 V VDS = VGS, ID = -250µA ––– ––– S VDS = -15V, ID = -12A… ––– -25 VDS = -20V, VGS = 0V µA ––– -250 VDS = -16V, VGS = 0V, TJ = 150°C ––– 500 VGS = -8.0V nA ––– -500 VGS = 8.0V ––– 44 ID = -12A ––– 8.7 nC VDS = -16V ––– 19 VGS = -4.5V, See Fig. 6 and 13 „ … 9.7 ––– VDD = -10 V 73 ––– ID = -12A ns 53 ––– RG = 6.0W, VGS = 4.5V 84 ––– RD = 0.8W, See Fig. 10„… Between lead, 7.5 ––– nH and center of die contact 1460 ––– VGS = 0V 790 ––– pF VDS = -15V 370 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -24 showing the A G integral reverse -96 ––– ––– p-n junction diode. S ––– ––– -1.4 V TJ = 25°C, IS = -12A, VGS = 0V „ ––– 58 88 ns TJ = 25°C, IF = -12A ––– 54 81 nC di/dt = -100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD £ -12A, di/dt £ 120A/µs, VDD £ V(BR)DSS, TJ £ 175°C ‚ Starting TJ = 25°C, L = 3.0mH RG = 25W, IAS = -14A. (See Figure 12) „ Pulse width £ 300µs; duty cycle £ 2%. ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL5602S 100 VGS -15V -12V -10V -7.0V -5.0V -4.5V -2.7V BOTTOM -2.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -7.0V -5.0V -4.5V -2.7V BOTTOM -2.0V TOP 10 -2.0V -2.0V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.5 -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -24A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 10 1 2.0 V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 VGS = -4.5V 20 40 60 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL5602S 2800 2400 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = -12A VDS = -16V VDS = -10V 12 C, Capacitance (pF) 2000 Ciss 1600 1200 800 9 Coss 6 Crss 400 0 3 1 10 100 0 0 10 20 30 FOR TEST CIRCUIT SEE FIGURE 13 40 50 60 70 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I 100 100us TJ = 175 ° C TJ = 25 ° C 1 1ms 10 10ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 1 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL5602S 25 VDS 20 RD VGS RG -ID , Drain Current (A) D.U.T. + 15 -4.5V 10 Pulse Width £ 1 µs Duty Factor £ 0.1 % 5 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - VDD 5 IRL5602S VDS EAS , Single Pulse Avalanche Energy (mJ) L 1000 RG D.U.T IAS VDD A DRIVER 800 ID -5.9A -10A BOTTOM -14A TOP -20V tp 0.01Ω 600 400 15V Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 175 I AS Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + QGS QGD D.U.T. - -4.5V .3µF VDS IRL5602S Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS · dv/dt controlled by RG · ISD controlled by Duty Factor "D" · D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 7 TO-263AB Package Details 10.54 (.415) 10.29 (.405) -A2 1.40 (.055) MAX. 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 10.16 (.400) REF. IRL5602S 1.78 (.070) 1.27 (.050) 1 3 3X 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 0.368 (.0145) 0.342 (.0135) 2.54 (.100) 2X FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) (This is an IRF530S with assembly lot code 9B1M ) INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE A Part Marking FEED DIRECTION Tape & Reel 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 PART NUMBER F530S 9246 9B 1M DATE CODE (YYWW) YY = YEAR WW = WEEK 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 8 www.irf.com