IRLBA1304

PD- 91842A IRLBA1304 HEXFET® Power MOSFET l l l l l q Logic-Level Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated Purchase IRLBA1304/P for solder plated option. D VDSS = 40V RDS(on) = 0.004Ω G ID = 185A… S Description The HEXFET® is the most popular power MOSFET in the world. This particular HEXFET® is in the Super220TM and has the same outline and pinout as the industry standard TO-220. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has also been designed to meet automotive qualification standard Q101. Super - 220 Max. Units A W W/°C V mJ A mJ V/ns °C Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force 185, pkg limited to 95A* 130, pkg limited to 95A* 740 300 2.0 ± 16 1160 100 30 5.0 -55 to + 175 300 (1.6mm from case ) 20 N Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.5 ––– Max. 0.5 ––– 58 Units °C/W * Current capability in normal application, see Fig.9. www.irf.com 1 9/14/99 IRLBA1304 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. Typ. Max. Units Conditions 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.0040 VGS = 10V, ID = 110A „ Ω ––– ––– 0.0065 VGS = 4.5V, ID = 93 „ 1.0 ––– ––– V VDS = VGS, ID = 250µA 120 ––– ––– S VDS = 25V, ID = 110A ––– ––– 25 VDS = 40V, VGS = 0V µA ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = -16V ––– ––– 140 ID = 110A ––– ––– 39 nC VDS = 32V ––– ––– 79 VGS = 4.5V, See Fig. 6 and 13 „ ––– 21 ––– VDD = 20V ––– 350 ––– ID = 110A ––– 45 ––– RG = 0.9 Ω ––– 103 ––– RD = 0.18Ω,See Fig. 10 „ Between lead, ––– 2.0 ––– nH 6mm (0.25in.) G from package ––– 5.0 ––– and center of die contact ––– 7660 ––– VGS = 0V ––– 2150 ––– pF VDS = 25V ––– 460 ––– ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 185* showing the A G integral reverse ––– ––– 740 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 110A, VGS = 0V „ ––– 100 150 ns TJ = 25°C, IF = 110A ––– 250 380 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 110A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ‚ Starting TJ = 25°C, L = 230µH „ Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 100A. (See Figure 12) 2 www.irf.com IRLBA1304 1000 VGS 15V 10V 5.0V 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V TOP 1000 I D , Drain-to-Source Current (A) 100 10 1 I D , Drain-to-Source Current (A) VGS 15V 10V 5.0V 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V TOP 100 2.5V 20µs PULSE WIDTH TJ = 175 °C 1 10 100 2.5V 0.1 0.1 1 20µs PULSE WIDTH TJ = 25 °C 10 100 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 175 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C ID = 170A I D , Drain-to-Source Current (A) 2.0 100 1.5 10 1.0 1 0.5 0.1 2.0 V DS = 25V 20µs PULSE WIDTH 4.0 6.0 8.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLBA1304 12000 VGS , Gate-to-Source Voltage (V) 10000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 110A VDS = 32V VDS = 20V VDS = 8V 12 C, Capacitance (pF) 8000 Ciss 9 6000 6 4000 Coss 2000 3 Crss 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) TJ = 175 ° C I D , Drain Current (A) 1000 10us 100 100us TJ = 25 ° C 100 1ms 10 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 1 TC = 25 ° C TJ = 175 ° C Single Pulse 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLBA1304 200 LIMITED BY PACKAGE VDS VGS RD 160 D.U.T. + RG I D , Drain Current (A) -VDD 120 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLBA1304 3000 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 2500 ID 41A 71A BOTTOM 100A TOP VDS L D R IV E R 2000 RG 20V tp D .U .T IA S 1500 + V - DD A 0 .0 1 Ω 1000 Fig 12a. Unclamped Inductive Test Circuit 500 0 25 50 75 100 125 150 175 V (B R )D SS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 4.5 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLBA1304 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLBA1304 Super-220 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99 8 www.irf.com