IRLD110PBF

PD-95980 IRLD110PbF • Lead-Free www.irf.com 1 12/20/04 IRLD110PbF 2 www.irf.com IRLD110PbF www.irf.com 3 IRLD110PbF 4 www.irf.com IRLD110PbF www.irf.com 5 IRLD110PbF 6 www.irf.com IRLD110PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS www.irf.com 7 IRLD110PbF Hexdip Package Outline Hexdip Part Marking Information THIS IS AN IRFD120 INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFD120 XXXX DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S ITE CODE Data and specifications subject to change without notice. ASS EMBLY LOT CODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 8 www.irf.com