IRLF230

Provisional Data Sheet No. PD-9.1614 IRLF230 HEXFET TRANSISTOR N-CHANNEL 200Volt, 0.40 Ω, HEXFET The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-tosource voltage of 5V. In addition to the well established characteristics of HEXFETs, they have the added advantage of providing low drive requirements to interface power loads to logic level IC’s and microprocessors. Fields of application include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers. The HEXFET technology is the key to International Rectifier ’s advance line of logic level power MOSFET transistors. The efficient geometry and unique processing of the HEXFET achieve very low on-state resistance combine with high transconductance. ® Product Summary Part Number IRLF230 BVDSS 200V RDS(on) 0.40Ω ID 5.2A Features: n n n n n n Dynamic dv/dt Rating Logic Level Gate Drive RDS(on) Specific at VGS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 5.0V, TC = 25°C ID @ VGS = 5.0V, TC = 100°C I DM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Lead Temperature Weight 300(0.063 in.(1.6mm) from case for 10s) 0.98 (typical) g 4/7/97 IRLF230 5.2 3.3 20 25 0.20 ±10 4.2 -55 to 150 Units A W W/K … V V/ns o C IRLF230 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — — 1.0 4.5 — — — — — — — — — — — — — Typ Max Units — 0.28 — — — — — — — — — — — — — — — 5.0 15 — — 0.40 0.50 2.0 — 25 250 100 -100 41 4.9 21 9.4 34 43 26 — — V V/°C Ω V S( ) µA Ω Test Conditions VGS =0 V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 5.0V, ID = 3.1A „ VGS = 4.0V, ID = 2.6A VDS = VGS, ID = 250µA VDS > 15V, IDS = 3.1A „ VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 10 V VGS = -10V VGS = 5.0V, ID = 5.2A VDS = Max Rating x 0.5 VDD = 100V, ID = 5.2A, RG = 6.0Ω IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance nA nC ns nH Measured from dr ain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 230 61 — — — pF VGS = 0V, VDS = 25 V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS I SM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 5.2 20 2.0 250 1.7 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 5.2A, VGS = 0V „ Tj = 25°C, I F = 5.2A, di/dt ≤ 100A/µs VDD ≤ 50V „ A V ns µC Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min. Typ. Max. Units — — — — 5.0 175 K/W Test Conditions Typical socket mount IRLF230 100 TOP I D , Drain-to-Source Current (A) BOTTOM I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2.5V 100 TOP BOTTOM VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2.5V 10 10 2.5V 20µs PULSE WIDTH TJ = 150 °C 1 10 100 2.5V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 I D = 5.2A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C 10 TJ = 150 ° C 2.0 1.5 1 1.0 0.5 0.1 2.0 V DS = 50V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = 5.0V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) T J, Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLF230 2000 1600 V GS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 15 ID = 5.2A VDS = 160V VDS = 100V VDS = 40V 12 C, Capacitance (pF) 1200 9 800 6 Coss 400 3 Crss 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT 12 SEE FIGURE 13 30 40 50 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10us 10 I D , Drain Current (A) 10 100us TJ = 150 ° C TJ = 25 ° C 1 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 0.1 1 TC = 25 ° C TJ = 150° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLF230 6.0 VDS 5.0 RD VGS RG D.U.T. + ID , Drain Current (A) 4.0 -VDD 5.0V 3.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC ) 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 1 Thermal Response 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRLF230 Current Regulator Same Type as D.U.T. 50KΩ 5.0V 12V .2µF QG .3µF 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit IRLF230 Notes:  Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. ‚ K/W = °C/W ƒ ISD ≤ 5.2A, di/dt ≤ 270 A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω „ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — TO-205AF (Modified TO-39) All dimensions are shown millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/97