IRLHS2242PBF

PD - 96360 IRLHS2242PbF HEXFET® Power MOSFET VDS VGS max RDS(on) max (@VGS = 4.5V) -20 ±12 31 53 9.6 -8.5 V V mΩ mΩ nC A D1 T OP VIEW 6D D D D RDS(on) max (@VGS = 2.5V) G D2 S D 5D Qg typ ID (@Tc(Bottom) = 25°C) D G3 4S D S S i 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRLHS2242TRPBF IRLHS2242TR2PBF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Wirebond Limited) Pulsed Drain Current Max. -20 ±12 -7.2 -5.8 -15 -9.8 Units V g Power Dissipation g Power Dissipation c hi hi -8.5i -34 2.1 9.6 A W W/°C °C Linear Derating Factor Operating Junction and g 0.02 -55 to + 150 Storage Temperature Range Notes  through ‡ are on page 9 www.irf.com 1 03/18/11 IRLHS2242TR/TR2PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units -20 ––– ––– ––– -0.4 ––– ––– ––– ––– ––– 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.01 25 43 -0.8 -3.8 ––– ––– ––– ––– ––– 12 9.6 1.6 3.7 4.3 4.8 6.8 17 7.9 54 54 66 877 273 182 ––– ––– 31 53 Conditions V VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA mΩ VGS = -4.5V, ID = -8.5A VGS = -2.5V, ID = -6.8A e e -1.1 V VDS = VGS, ID = -10μA ––– mV/°C -1.0 VDS = -16V, VGS = 0V μA -150 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V ––– S VDS = -10V, ID = -8.5A ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– nC Ω ns VDD = -10V, VGS = -4.5V ID = -8.5A RG = 2.0Ω VGS = 0V VDS = -10V ƒ = 1.0KHz Max. 18 -8.5 Units mJ A nC nC VGS =-10V, VDS = -10V, ID = -8.5A VDS = -10V VGS = -4.5V ID = -8.5A VDS = 16V, VGS = 0V pF Avalanche Characteristics EAS IAR ™ d Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 27 20 -8.5 Conditions MOSFET symbol D h A V ns nC Ù -34 -1.2 41 30 showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = -8.5A, VGS = 0V e TJ = 25°C, IF = -8.5A, VDD = -10V di/dt = 200A/μs eà Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (