IRLHS6276TRPBF

PD - 97570B IRLHS6276PbF HEXFET® Power MOSFET VDS VGS RDS(on) max (@VGS = 4.5V) 20 ±12 45 62 3.4 V V mΩ mΩ A   6 X @ D W à Q P U S2 G2 D1 D1 D2  '  RDS(on) max (@VGS = 2.5V)  '  7 ( )   *  *  S1 ID (@Tc(Bottom) = 25°C) d D2 G1  '  6    ' 2mm x 2mm Dual PQFN  7 ( ) Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 45mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier results in ⇒ Orderable part number Package Type IRLHS6276TRPBF IRLHS6276TR2PBF PQFN Dual 2mm x 2mm PQFN Dual 2mm x 2mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current Max. 20 Units V 3.6 f Power Dissipation f Power Dissipation c d d 9.6d 6.1d 3.4d 4.5 40 1.5 6.6 ±12 A W W/°C °C Linear Derating Factor Operating Junction and f 0.012 -55 to + 150 Storage Temperature Range Notes  through † are on page 2 www.irf.com 1 07/19/11 IRLHS6276PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 ––– ––– ––– 0.5 ––– ––– ––– ––– ––– 8.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 9.3 33 46 0.8 -3.8 ––– ––– ––– ––– ––– 3.1 0.22 1.3 4.0 4.4 9.3 10 4.9 310 79 49 Max. Units ––– ––– 45 62 1.1 ––– 1.0 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 3.4A mΩ VGS = 2.5V, ID = 3.4A V VDS = VGS, ID = 10μA mV/°C VDS = 16V, VGS = 0V μA VDS = 16V, VGS = 0V, TJ = 125°C ed ed nA S nC Ω ns VGS = 12V VGS = -12V h h h VDS = 10V, ID = 3.4A VDS = 10V d VGS = 4.5V ID = 3.4A (See Fig.17 & 18) d VDD = 10V, VGS = 4.5V ID = 3.4A d RG=1.8Ω See Fig.15 VGS = 0V VDS = 10V ƒ = 1.0MHz pF Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. ––– ––– ––– ––– Typ. ––– ––– ––– 5.2 Max. Units 9.6 Conditions MOSFET symbol D d A V ns Ù 40 1.2 7.8 showing the integral reverse G S ––– 5.0 7.5 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25°C, IS = 3.4A , VGS = 0V TJ = 25°C, IF = 3.4A , VDD = 10V di/dt = 126A/μs eà d d e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (