IRLHS6342TRPBF

PD - 96339A IRLHS6342PbF VDS VGS RDS(on) max (@VGS = 4.5V) 30 ±12 15.5 11 12 V V mΩ nC A D1 HEXFET® Power MOSFET TOP VIEW 6D D D D D Qg (typical) ID (@TC (Bottom) = 25°C) D2 S D 5D G i G3 4S D S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRLHS6342TRPBF IRLHS6342TR2PBF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom)= 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current Max. 30 ±12 8.7 6.9 19 15 Units V g Power Dissipation g Power Dissipation c hi hi 12i 76 2.1 1.3 A W W/°C °C Linear Derating Factor Operating Junction and g 0.02 -55 to + 150 Storage Temperature Range Notes  through ‡ are on page 2 www.irf.com 1 02/25/11 IRLHS6342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 30 ––– ––– ––– 0.5 ––– ––– ––– ––– ––– 39 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 22 12.0 15.0 ––– -4.2 ––– ––– ––– ––– ––– 11 0.5 4.6 2.1 4.9 13 19 13 1019 97 70 Max. Units ––– ––– 15.5 19.5 1.1 ––– 1.0 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Ω ns V Conditions VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.5A mΩ VGS = 2.5V, ID = 8.5A V VDS = VGS, ID = 10µA mV/°C e e µA nA S nC VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VDS = 10V, ID = 8.5A VDS = 15V VGS = 4.5V ID = 8.5A (See Fig. 6 & 17) VDD = 15V, VGS = 4.5V ID = 8.5A RG=1.8Ω See Fig.18 VGS = 0V pF VDS = 25V ƒ = 1.0MHz Max. 14 8.5 Units mJ A Avalanche Characteristics EAS IAR ™ d Min. ––– ––– ––– ––– Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Typ. ––– ––– ––– 11 Max. Units 12 Conditions MOSFET symbol D i A V ns Ù 76 1.2 17 showing the integral reverse G S ––– 13 20 nC Time is dominated by parasitic Inductance p-n junction diode. TJ = 25°C, IS = 8.5A, VGS = 0V TJ = 25°C, IF = 8.5A, VDD = 15V di/dt = 300 A/µs e eà Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (