PD - 97607A
IRLHS6376PbF
HEXFET® Power MOSFET
VDS VGS RDS(on) max
(@VGS = 4.5V)
30 ±12 63 82 3.4
V V mΩ mΩ A
X @ D W Ã Q P U
S2 G2 D1
D1 D2
6 '
'
RDS(on) max
(@VGS = 2.5V)
7 ( )
*
*
G1 S1
ID
(@Tc(Bottom) = 25°C)
d
D2
'
6
'
2mm x 2mm Dual PQFN
7 ( )
Applications
• Charge and discharge switch for battery application • Load/System Switch
Features and Benefits
Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier
Orderable part number Package Type IRLHS6376TRPBF IRLHS6376TR2PBF PQFN Dual 2mm x 2mm PQFN Dual 2mm x 2mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current
Max.
30 ±12 3.6 2.9 7.6
Units
V
d
A
f Power Dissipation f
Power Dissipation
c
d d 3.4d
4.9 30 1.5 6.6 0.012 -55 to + 150
W W/°C °C
Linear Derating Factor Operating Junction and
f
Storage Temperature Range
Notes through are on page 2
www.irf.com
1
07/19/11
IRLHS6376PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 ––– ––– ––– 0.5 ––– ––– ––– ––– ––– 8.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ.
––– 0.023 48 61 0.8 -3.6 ––– ––– ––– ––– ––– 2.8 0.13 1.1 4.6 4.4 11 11 9.4 270 32 20
Max. Units
––– ––– 63 82 1.1 ––– 1.0 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF Ω ns nC V
Conditions
VGS = 0V, ID = 250μA VGS = 4.5V, ID = 3.4A VGS = 2.5V, ID = 3.4A VDS = VGS, ID = 10μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VDS = 10V, ID = 3.4A VDS = 15V VGS = 4.5V ID = 3.4A
V/°C Reference to 25°C, ID = 1mA mΩ V mV/°C μA nA S
ed ed
h
d
h h
d (See Fig.17 & 18) d
VDD = 10V, VGS = 4.5V ID = 3.4A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min.
––– ––– ––– ––– –––
Typ.
––– ––– ––– 8.0 5.9
Max. Units
7.6
Conditions
MOSFET symbol
D
d
A
30 1.2 12 8.9 V ns nC
showing the integral reverse
G S
p-n junction diode. TJ = 25°C, IS = 3.4A , VGS = 0V TJ = 25°C, IF = 3.4A , VDD = 15V di/dt = 260A/μs
eÃ
d d
e
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom) RθJC (Top) RθJA RθJA (
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