IRLI520N

PD - 9.1496A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI520N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID =8.1A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. 8.1 5.7 35 30 0.20 ± 16 85 6.0 3.0 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max. 5.0 65 Units °C/W 3/16/98 IRLI520N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Min. 100 ––– ––– ––– ––– 1.0 3.1 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 40 35 23 22 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.18 VGS = 10V, ID = 6.0A „ 0.22 Ω VGS = 5.0V, ID = 6.0A „ 0.26 VGS = 4.0V, ID = 5.0A „ 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 6.0A† 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 20 ID = 6.0A 4.6 nC VDS = 80V 10 VGS = 5.0V, See Fig. 6 and 13 „† ––– VDD = 50V ––– ID = 6.0A ns ––– RG = 11Ω, VGS = 5.0V ––– RD = 8.2Ω, See Fig. 10 „† Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 440 ––– VGS = 0V 97 ––– VDS = 25V pF 50 ––– ƒ = 1.0MHz, See Fig. 5† 12 ––– ƒ = 1.0MHz D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 8.1 showing the A G integral reverse ––– ––– 35 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 6.0A, VGS = 0V „ ––– 110 160 ns TJ = 25°C, IF = 6.0A ––– 410 620 nC di/dt = 100A/µs „† Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 4.7mH RG = 25Ω, IAS = 6.0A. (See Figure 12) ƒ ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … t=60s, ƒ=60Hz † Uses IRL520N data and test conditions