IRLIB9343

PD - 95852 DIGITAL AUDIO MOSFET IRLIB9343 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Key Parameters VDS RDS(ON) typ. @ VGS = -10V RDS(ON) typ. @ VGS = -4.5V Qg typ. TJ max D -55 93 150 31 175 V m: m: nC °C G S TO-220 Full-Pak Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Max. -55 ±20 -14 -10 -60 33 20 0.26 -40 to + 175 10 (1.1) Units V A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Mounting Torque, 6-32 or M3 screw W W/°C °C lbf in (N m) y y Thermal Resistance RθJC RθJA Junction-to-Case f Parameter Typ. ––– ––– Max. 3.84 65 Units °C/W Junction-to-Ambient f Notes  through … are on page 7 www.irf.com 1 4/1/04 IRLIB9343 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs Qgd Qgodr td(on) tr td(off) tf Ciss Coss Crss Coss LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance Min. -55 ––– ––– ––– -1.0 ––– ––– ––– ––– ––– 5.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– -52 93 150 ––– -3.7 ––– ––– ––– ––– ––– 31 7.1 8.5 15 9.5 24 21 9.5 660 160 72 280 4.5 7.5 ––– ––– 105 170 ––– ––– -2.0 -25 -100 100 ––– 47 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF VGS = 0V VDS = -50V ns S nA V Conditions VGS = 0V, ID = -250µA mV/°C Reference to 25°C, ID = -1mA mΩ VGS = -10V, ID = -3.4A e VGS = -4.5V, ID = -2.7A e V mV/°C µA VDS = -55V, VGS = 0V VDS = -55V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VDS = -25V, ID = -14A VDS = -44V VGS = -10V ID = -14A See Fig. 6 and 19 VDD = -28V, VGS = -10V e ID = -14A RG = 2.5Ω VDS = VGS, ID = -250µA ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to -44V Between lead, 6mm (0.25in.) from package and center of die contact Avalanche Characteristics Parameter Typ. Max. Units mJ A mJ EAS IAR EAR Single Pulse Avalanche Energyd Avalanche Current g Repetitive Avalanche Energy g ––– 190 See Fig. 14, 15, 17a, 17b Diode Characteristics Parameter IS @ TC = 25°C Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– ––– 57 120 -14 A -60 -1.2 86 180 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25°C, IS = -14A, VGS = 0V e TJ = 25°C, IF = -14A di/dt = 100A/µs e 2 www.irf.com IRLIB9343 100 TOP VGS -15V -12V -10V -8.0V -5.5V -4.5V -3.0V -2.5V 100 TOP VGS -15V -12V -10V -8.0V -5.5V -4.5V -3.0V -2.5V -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 1 1 -2.5V ≤ 60µs PULSE WIDTH Tj = 175°C -2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 0.1 0.1 1 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.0 Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (Α) T J = 25°C T J = 175°C 10.0 ID = -14A VGS = -10V 1.5 1.0 1.0 VDS = -25V ≤ 60µs PULSE WIDTH 0.1 0.0 5.0 10.0 15.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 -V GS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 20 -VGS, Gate-to-Source Voltage (V) 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd ID= -14A 16 C, Capacitance (pF) VDS= -44V VDS= -28V VDS= -11V 1000 Ciss Coss 100 12 8 Crss 4 FOR TEST CIRCUIT SEE FIGURE 19 10 1 10 100 0 0 10 20 30 40 50 QG Total Gate Charge (nC) -V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRLIB9343 100.0 1000 -I SD, Reverse Drain Current (A) T J = 175°C 10.0 -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1.0 T J = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 1 Tc = 25°C Tj = 175°C Single Pulse 10 1msec 10msec 100 1000 -V SD, Source-to-Drain Voltage (V) -V DS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 16 2.5 Fig 8. Maximum Safe Operating Area -I D , Drain Current (A) 12 -VGS(th) Gate threshold Voltage (V) 2.0 8 ID = -250µA 1.5 4 0 25 50 75 100 125 150 175 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Junction Temperature (°C) T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 10 Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 0.02 0.01 Ri (°C/W) τi (sec) 0.8737 0.000799 0.877 2.089 0.068578 2.593 τ1 τ2 0.01 Ci= τi/Ri Ci τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRLIB9343 RDS(on), Drain-to -Source On Resistance ( mΩ) EAS, Single Pulse Avalanche Energy (mJ) 600 1000 ID = -14A 500 800 ID -5.0A -5.6A BOTTOM -10A TOP 400 600 300 400 200 T J = 125°C 100 200 0 4.0 6.0 T J = 25°C 8.0 10.0 0 25 50 75 100 125 150 175 -V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage 1000 Fig 13. Maximum Avalanche Energy Vs. Drain Current Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax -Avalanche Current (A) 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current Vs.Pulsewidth 200 EAR , Avalanche Energy (mJ) 160 TOP Single Pulse BOTTOM 1% Duty Cycle ID = -10A 120 80 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy Vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav www.irf.com 5 IRLIB9343 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Inductor Curent Current Ripple ≤ 5% ISD * Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs VDS L VDS RG -VGS -20V RD D.U.T IAS VDD A DRIVER VGS RG -10V D.U.T. + 15V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 17a. Unclamped Inductive Test Circuit I AS Fig 18a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% tp V(BR)DSS 90% VDS Fig 17b. Unclamped Inductive Waveforms Fig 18b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K Qgs1 Qgs2 Qgd Qgodr Fig 19a. Gate Charge Test Circuit Fig 19b Gate Charge Waveform 6 - tp 0.01Ω VDD www.irf.com IRLIB9343 TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) ø 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN. 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 2 CONTROLLING DIMENSION: INCH. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 3X 1.40 (.055) 1.05 (.042) 3X 0.90 (.035) 0.70 (.028) 0.25 (.010) 2.54 (.100) 2X M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) MINIMUM CREEPAGE DISTANCE BETWEEN A-B-C-D = 4.80 (.189) TO-220 Full-Pak Part Marking Information Notes : T his part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB. EXAMPLE: T HIS IS AN IRFI840G WIT H AS S EMBLY LOT CODE E401 PART NUMBER IRFI840G E 401 9245 INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE DAT E CODE (YYWW) YY = YEAR WW = WEEK Notes : This part marking information applies to devices produced after 02/26/2001 in location other than GB. EXAMPLE: T HIS IS AN IRFI840G WIT H ASS EMBLY LOT CODE 3432 AS S EMBLED ON WW 24 1999 IN T HE AS SEMBLY LINE "K" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFI840G 924K 34 32 DAT E CODE YEAR 9 = 1999 WEEK 24 LINE K TO-220 FullPak packages are not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 3.89mH, ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Rθ is measured at TJ of approximately 90°C. … Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information RG = 25Ω, IAS = -10A. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.4/04 www.irf.com 7