IRLL014NPBF

PD- 95154 IRLL014NPbF Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current  Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy * Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 2.8 2.0 1.6 16 2.1 1.0 8.3 ± 16 32 2.0 0.1 7.2 -55 to + 150 Units A W W mW/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units °C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 4/20/04 IRLL014NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V (BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) V GS(th) g fs IDSS I GSS Qg Qgs Qgd t d(on) tr t d(off) tf C iss Coss C rss Min. 55 ––– ––– ––– ––– 1.0 2.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.015 ––– ––– ––– ––– ––– ––– ––– ––– ––– 9.5 1.1 3.0 5.1 4.9 14 2.9 230 66 30 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.14 VGS = 10V, ID = 2.0A „ 0.20 Ω VGS = 5.0V, ID = 1.2A „ 0.28 VGS = 4.0V, ID = 1.0A „ 2.0 V VDS = VGS, I D = 250µA ––– S VDS = 25V, I D = 1.0A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 14 ID = 2.0A 1.7 nC VDS = 44V 4.4 VGS = 10V, See Fig. 6 and 9 „ ––– VDD = 28V ––– ID = 2.0A ns ––– RG = 6.0 Ω ––– RD = 14Ω, See Fig. 10 „ ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 1.3 showing the A integral reverse ––– ––– 16 p-n junction diode. ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V „ ––– 41 61 ns TJ = 25°C, I F = 2.0A ––– 73 110 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH RG = 25Ω, I AS = 4.0A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRLL014NPbF 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 3.0V 1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 100 1 0.1 1 3.0V 20µs PULSE WIDTH TJ = 150°C A 10 100 V DS , Drain-to-Source Voltage (V) V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 2.0A I D , Drain-to-Source Current (A) 1.5 10 TJ = 25°C TJ = 150°C 1.0 0.5 1 3.0 4.0 5.0 V DS = 25V 20µs PULSE WIDTH 6.0 7.0 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLL014NPbF 400 C, Capacitance (pF) 300 Ciss 200 Coss V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 2.0A V DS = 44V V DS = 28V 16 12 8 100 Crss 4 0 1 10 100 A 0 0 3 6 FOR TEST CIRCUIT SEE FIGURE 9 9 12 15 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) 10 10 10µs TJ = 150°C TJ = 25°C 1 100µs 1 1ms 10ms 0.1 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 A 0.1 1 TA = 25°C TJ = 150°C Single Pulse 10 1.6 100 A VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLL014NPbF QG V DS VGS RG 10V RD 10V VG QGS QGD D.U.T. + - VDD Charge Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50KΩ 12V .2µF .3µF 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Fig 10b. Switching Time Waveforms Thermal Response (ZthJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 P DM 1 Notes: 1. Duty factor D = t t 1 t S INGLE PULSE (THERMAL RESPONSE) /t 2 1 2 0.1 0.00001 2. Peak TJ = PDM x Z thJA + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLL014NPbF E AS , Single Pulse Avalanche Energy (mJ) 80 TOP BOTTOM 60 15V ID 1.8A 3.2A 4.0A VDS L DRIVER 40 RG 10V D.U.T IAS tp + V - DD A 0.01Ω 20 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 0 VDD = 25V 25 50 75 100 125 A 150 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRLL014NPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 IRLL014NPbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INT ERNAT IONAL RECTIF IER LOGO PART NUMBE R LOT CODE AXXXX FL014 314P A = AS S EMBLY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DE S IGNATES LEAD-F REE PRODUCT (OPTIONAL) T OP BOT TOM 8 www.irf.com IRLL014NPbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/04 www.irf.com 9