IRLL014PBF

PD - 95387 IRLL014PbF HEXFET® Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G S ID = 2.7A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application. SOT-223 Absolute Maximum Ratings Parameter ID @ Tc = 25°C ID @ Tc = 100°C IDM PD @Tc = 25°C PD @TA = 25°C Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current  Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds Max. 2.7 1.7 22 3.1 2.0 0.025 0.017 -/+10 100 2.7 0.31 4.5 -55 to + 150 300 (1.6mm from case) Units A W W/°C VGS EAS IAR EAR dv/dt TJ, TSTG V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-PCB Junction-to-Ambient. (PCB Mount)** Typ. ––– ––– Max. 40 60 Units °C/W ** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 06/10/04 IRLL014PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 60 ––– ––– ––– 1.0 3.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –– ––– ––– ––– ––– ––– Typ. ––– 0.073 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 9.3 110 17 26 4.0 6.0 400 170 42 Max. Units Conditions ––– V VGS = 0V, I D = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.20 VGS = 5.0V, I D = 1.6A „ 0.28 Ω VGS = 4.0V, ID = 1.4A „ 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 1.6 A 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 125°C 100 VGS = 10V nA -100 VGS = -10V 8.4 ID = 10A 3.5 nC VDS = 48V 6.0 VGS = 5.0V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 10A ns ––– RG = 12 Ω ––– RD = 2.8 Ω, See Fig. 10 „ ––– ––– ––– ––– ––– pF nH Between lead, 6mm(0.25in) from package and center of die contact. VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 D G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 2.7 showing the A integral reverse ––– ––– 22 p-n junction diode. ––– ––– 1.6 V TJ = 25°C, IS = 2.7A, VGS = 0V „ ––– 65 130 ns TJ = 25°C, IF = 10A ––– 0.33 0.65 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ VDD=25V, starting TJ = 25°C, L =16 mH RG = 25Ω, IAS = 2.7A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRLL014PbF www.irf.com 3 IRLL014PbF 4 www.irf.com IRLL014PbF www.irf.com 5 IRLL014PbF 6 www.irf.com IRLL014PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING T HIS IS AN IRFL014 PART NUMBER INT ERNAT IONAL RECT IFIER LOGO LOT CODE AXXXX F L014 314P A = AS S EMBLY S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) T OP BOT T OM www.irf.com 7 IRLL014PbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 8 www.irf.com