IRLL024Z

PD - 95886A AUTOMOTIVE MOSFET Features l l l l l IRLL024Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 60mΩ G S ID = 5.0A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. SOT-223 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) i Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Parameter Max. 5.0 4.0 40 2.8 1.0 0.02 ± 16 Units A Power Dissipation Linear Derating Factor Gate-to-Source Voltage i j ™ i i d h W W/°C V mJ A mJ EAS (Thermally limited) Single Pulse Avalanche Energy Avalanche Current 21 38 See Fig.12a, 12b, 15, 16 -55 to + 150 Single Pulse Avalanche Energy Tested Value Ù Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C Thermal Resistance RθJA RθJA i Junction-to-Ambient (PCB mount, steady state) j Junction-to-Ambient (PCB mount, steady state) Parameter Typ. ––– ––– Max. 45 120 Units °C/W www.irf.com 1 08/03/04 IRLL024Z Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– ––– ––– 1.0 7.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.049 48 ––– ––– ––– ––– ––– ––– ––– ––– 7.0 1.5 4.0 8.6 33 20 15 380 66 36 220 53 93 ––– ––– 60 80 100 3.0 ––– 20 250 200 -200 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– V V/°C mΩ V S µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.0A VGS = 5.0V, ID = 3.0A VGS = 4.5V, ID = 3.0A VDS = VGS, ID = 250µA VDS = 25V, ID = 3.0A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 3.0A VDS = 44V VGS = 5.0V VDD = 28V ID = 3.0A RG = 56 Ω VGS = 5.0V VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V e e e nC e e ns pF f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 15 9.1 5.0 A 40 1.3 23 14 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù S p-n junction diode. TJ = 25°C, IS = 3.0A, VGS = 0V TJ = 25°C, IF = 3.0A, VDD = 28V di/dt = 100A/µs e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) e Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 4.8mH RG = 25 Ω, IAS = 3.0A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population. 100% tested to this value in production. ‡ When mounted on 1 inch square copper board. ˆ When mounted on FR-4 board using minimum recommended footprint. 2 www.irf.com IRLL024Z 100 TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 100 TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 3.0V 1 1 3.0V ≤60µs PULSE WIDTH 0.1 0.1 1 Tj = 25°C 0.1 100 0.1 1 10 ≤60µs PULSE WIDTH Tj = 150°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 Gfs, Forward Transconductance (S) 10 TJ = 25°C 8 T J = 150°C ID, Drain-to-Source Current (Α) T J = 150°C 10 6 1 T J = 25°C 4 2 0.1 0 2 4 VDS = 10V ≤60µs PULSE WIDTH 6 8 10 V DS = 10V 300µs PULSE WIDTH 0 2 4 6 8 10 12 0 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRLL024Z 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.0 ID= 3.0A VGS, Gate-to-Source Voltage (V) 5.0 4.0 3.0 2.0 1.0 0.0 VDS= 44V VDS= 28V VDS= 11V C, Capacitance(pF) 1000 Ciss Coss Crss 100 10 1 10 100 0 1 2 3 4 5 6 7 8 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 1000 100 10 100µsec 1 0.1 DC T A = 25°C Tj = 150°C Single Pulse 0.1 1.0 10 100 1000.0 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 10 T J = 150°C TJ = 25°C 1 VGS = 0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V) 0.0001 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 0.01 0.001 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLL024Z 5 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 4 ID, Drain Current (A) ID = 3.0A VGS = 10V 1.5 3 2 1.0 1 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Normalized On-Resistance vs. Temperature 100 10 Thermal Response ( Z thJA ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 Ri (°C/W) τi (sec) 5.3396 0.000805 19.881 19.771 0.706300 20.80000 0.01 τ1 τ2 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100 0.0001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLL024Z EAS , Single Pulse Avalanche Energy (mJ) 15V 100 VDS L DRIVER 80 ID 3.0A 0.80A BOTTOM 0.69A TOP RG 20V VGS D.U.T IAS tp + V - DD 60 A 0.01Ω 40 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 2.5 VG 2.0 Charge Fig 13a. Basic Gate Charge Waveform ID = 250µA 1.5 L 0 DUT 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRLL024Z 100 Avalanche Current (A) 10 Duty Cycle = Single Pulse 1 0.01 0.05 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.1 0.10 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 25 EAR , Avalanche Energy (mJ) 20 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 3.0A 15 10 5 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRLL024Z Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRLL024Z SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information C@YA@UÃQSP9V8UÃH6SFDIB UCDTÃDTÃ6IÃDSAG # GPUÃ8P9@ 6YYYY 6Ã2Ã6TT@H7G`ÃTDU@ 96U@Ã8P9@ 8P9@ ``XX ``Ã2Ã`@6S XXÃ2ÃX@@F QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G DIU@SI6UDPI6G S@8UDAD@S GPBP Q6SUÃIVH7@S )/ 3 UPQ 7PUUPH www.irf.com 9 IRLL024Z SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Data and specifications subject to change without notice. This product has been designed for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 10 www.irf.com