PD - 93967
PROVISIONAL
IRLML5203
HEXFET® Power MOSFET RDS(on) max (mΩ)
98@VGS = -10V 165@VGS = -4.5V
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-30V
ID
-3.0A -2.6A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (
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免费人工找货- 国内价格
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- 10+0.43559
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- 1+0.3648
- 10+0.35055
- 100+0.31635
- 500+0.29925