IRLML9301TRPBF

PD - 96310 IRLML9301TRPbF VDS VGS Max RDS(on) max (@VGS = -10V) -30 ± 20 64 103 V V mΩ mΩ 6 * HEXFET® Power MOSFET ' RDS(on) max (@VGS = -4.5V) Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Features Low RDS(on) ( ≤ 64mΩ ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Benefits Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly ⇒ Increased reliability Symbol VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -3.6 -2.9 -15 1.3 0.8 0.01 ± 20 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Symbol RθJA RθJA Parameter Junction-to-Ambient e Typ. ––– ––– Max. 100 99 Units °C/W Junction-to-Ambient (t