PD - 96310
IRLML9301TRPbF
VDS VGS Max RDS(on) max
(@VGS = -10V)
-30 ± 20 64 103
V V mΩ mΩ
6 *
HEXFET® Power MOSFET
'
RDS(on) max
(@VGS = -4.5V)
Micro3TM (SOT-23) IRLML9301TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Features
Low RDS(on) ( ≤ 64mΩ ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification
Benefits
Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly ⇒ Increased reliability
Symbol
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG
Parameter
Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -3.6 -2.9 -15 1.3 0.8 0.01 ± 20 -55 to + 150
Units
V A
W W/°C V °C
Thermal Resistance
Symbol
RθJA RθJA
Parameter
Junction-to-Ambient
e
Typ.
––– –––
Max.
100 99
Units
°C/W
Junction-to-Ambient (t
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