PD - 95762
IRLMS1503PbF
HEXFET® Power MOSFET
l l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET Lead-Free
D D G
1
6
A D D S
VDSS = 30V RDS(on) = 0.10Ω
2
5
3
4
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Top View
Micro6™
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3.2 2.6 18 1.7 13 ± 20 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
RθJA Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max
75
Units
°C/W
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1/14/05
IRLMS1503PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 1.0 1.1 Typ. 0.037 6.4 1.1 1.9 4.6 4.4 10 2.0 210 90 32 Max. Units Conditions V V GS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA 0.100 V GS = 10V, ID = 2.2A Ω 0.20 V GS = 4.5V, ID = 1.1A V V DS = V GS, ID = 250µA S V DS = 10V, I D = 1.1A 1.0 V DS = 24V, V GS = 0V µA 25 V DS = 24V, VGS = 0V, TJ = 125°C -100 V GS = -20V nA 100 V GS = 20V 9.6 I D = 2.2A 1.7 nC V DS = 24V 2.8 V GS = 10V, See Fig. 6 and 9 V DD = 15V I D = 2.2A ns R G = 6.0Ω R D = 6.7Ω, See Fig. 10 V GS = 0V pF V DS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 36 39 1.7 18 1.2 54 58 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V TJ = 25°C, I F = 2.2A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec.
ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
2
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IRLMS1503PbF
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM3.0V TOP
10
10
1
1
3.0V
3.0V
20µs PULSE WIDTH TJ = 25 °C
1 10
0.1 0.1
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 2.2A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 ° C
1.0
1
0.5
0.1 3.0
V DS = 10V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLMS1503PbF
350 300
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 2.2A VDS = 24V VDS = 15V
16
C, Capacitance (pF)
250 200 150 100 50 0 1
Ciss
12
Coss
8
4
Crss
0
FOR TEST CIRCUIT SEE FIGURE 9
0 2 4 6 8 10
10
100
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
ID , Drain Current (A)
10us 10 100us
TJ = 150 ° C
TJ = 25 ° C
1
1ms 1 10ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4 1.6
0.1 1
TC = 25° C TJ = 150° C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLMS1503PbF
QG
VDS VGS RG 10V
RD
10V
QGS VG QGD
D.U.T.
+
- VDD
Charge
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50KΩ 12V .2µF .3µF
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLMS1503PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
-
+
RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-channel HEXFET® power MOSFET s
6
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IRLMS1503PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
3.00 (.118 ) 2.80 (.111 )
LEAD ASSIGNMENTS
-BD D S
RECOMMENDED FOOTPRINT
2X 0.95 (.0375 ) 6X (1.06 (.042 )
1.75 (.068 ) 1.50 (.060 ) -A-
6 1
5 2
4 3.00 (.118 ) 2.60 (.103 ) 3 6 1 5 2 4 3 2.20 (.087 )
0.95 ( .0375 ) 2X 6X
D 0.50 (.019 ) 0.35 (.014 )
D
G 6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES
O
O
6X
0.20 (.007 ) 0.09 (.004 )
0.60 (.023 ) 0.10 (.004 )
NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y = YEAR W = WEEK 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
T OP
LOT CODE
PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLMS1902 IRLMS 1503 IRLMS6702 IRLMS5703 IRLMS 6802 IRLMS4502 IRLMS2002 IRLMS6803
24 25 26
X Y Z
W = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
Note: A line above the work week (as shown here) indicates Lead-Free.
50 51 52
X Y Z
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IRLMS1503PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
4mm
FEED DIRECTION
NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . 01/05
8
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