IRLMS6802

PD- 91848E IRLMS6802 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -20V D 2 5 D G 3 4 S RDS(on) = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6ä Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -5.6 -4.5 -45 2.0 1.3 0.016 31 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 01/13/03 IRLMS6802 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 ––– ––– ––– -0.60 1.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250µA -0.005 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.050 VGS = -4.5V, ID = -5.1A ‚ Ω ––– 0.100 VGS = -2.5V, ID = -3.4A ‚ ––– -1.2 V VDS = VGS, I D = -250µA ––– ––– S VDS = -10V, I D = -0.80A ––– -1.0 VDS = -16V, VGS = 0V µA ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C ––– -100 VGS = -12V nA ––– 100 VGS = 12V 11 16 ID = -4.5A 2.2 3.3 nC VDS = -10V 2.9 4.3 VGS = -5.0V ‚ 12 ––– VDD = -10V 33 ––– ID = -1.0A ns 70 ––– RG = 6.0Ω 72 ––– RD = 10Ω ‚ 1079 ––– VGS = 0V 220 ––– pF VDS = -10V 152 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 74 45 -2.0 -45 -1.2 110 67 V ns nC A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V TJ = 25°C, IF = -3.0A di/dt = -100A/µs ‚ D S ƒ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ Surface mounted on FR-4 board, t ≤ 5sec. „ Starting TJ = 25°C, L = 6.8mH ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -3.0A. (See Figure 12) 2 www.irf.com IRLMS6802 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 10 10 1 1 -1.50V -1.50V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 ° C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.6A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 ° C 10 1.0 0.5 1 1.0 V DS = -15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS6802 1600 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = -4.5A 12 C, Capacitance (pF) 1200 Ciss VDS = -10V 9 800 6 400 Coss Crss 0 1 10 100 3 0 0 4 8 12 16 20 24 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I 100 10us 10 100us 1ms 1 10ms TJ = 150 ° C TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLMS6802 6.0 EAS , Single Pulse Avalanche Energy (mJ) 80 5.0 ID -1.3A -2.4A BOTTOM -3.0A TOP -ID , Drain Current (A) 60 4.0 3.0 40 2.0 20 1.0 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Starting TJ , Junction Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS6802 Micro6 Package Outline 3.00 (.118 ) 2.80 (.111 ) LEAD ASSIGNMENTS -BD D S RECOMMENDED FOOTPRINT 2X 0.95 (.0375 ) 6X (1.06 (.042 ) 1.75 (.068 ) 1.50 (.060 ) -A- 6 1 5 2 4 3.00 (.118 ) 2.60 (.103 ) 3 6 1 5 2 4 3 2.20 (.087 ) 0.95 ( .0375 ) 2X 6X D 0.50 (.019 ) 0.35 (.014 ) D G 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S 0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES O O 6X 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 Tape & Reel Information 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 6 www.irf.com IRLMS6802 Micro6 Part Marking Information Notes: This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRLMS6702 WW = (1-26) IF PRECEDED BY L AST DIGIT OF CALENDAR YEAR YEAR PART NUMBER DATE CODE TOP 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WAFER L OT NUMBER CODE 24 25 26 X Y Z BOT TOM PART NUMBER CODE REFERENCE: 2A = 2B = 2C = 2D = 2E = 2F = 2G = 2H = IRLMS 1902 IRLMS 1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRL MS 4502 IRLMS 2002 IRLMS 6803 WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DAT E CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF 50 51 X Y Notes: This part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y = YEAR W = WEEK 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D TOP LOT CODE PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLMS 1902 IRLMS 1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRLMS 4502 IRLMS 2002 IRLMS 6803 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/03 www.irf.com 7