IRLMS6802PBF

PD- 94897 IRLMS6802PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free D D 1 6 A D VDSS = -20V RDS(on) = 0.050Ω 2 5 D G 3 4 S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Top View Micro6ä Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -5.6 -4.5 -45 2.0 1.3 0.016 31 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 1/18/05 IRLMS6802PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 ––– ––– ––– -0.60 1.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250µA -0.005 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.050 VGS = -4.5V, ID = -5.1A ‚ Ω ––– 0.100 VGS = -2.5V, ID = -3.4A ‚ ––– -1.2 V VDS = VGS, ID = -250µA ––– ––– S VDS = -10V, ID = -0.80A ––– -1.0 VDS = -16V, VGS = 0V µA ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C ––– -100 VGS = -12V nA ––– 100 VGS = 12V 11 16 ID = -4.5A 2.2 3.3 nC VDS = -10V 2.9 4.3 VGS = -5.0V ‚ 12 ––– VDD = -10V 33 ––– ID = -1.0A ns 70 ––– R G = 6.0Ω 72 ––– R D = 10Ω ‚ 1079 ––– VGS = 0V 220 ––– pF VDS = -10V 152 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 74 45 -2.0 -45 -1.2 110 67 V ns nC A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V TJ = 25°C, IF = -3.0A di/dt = -100A/µs ‚ D S ƒ Notes:  Repetitive rating; pulse width limited by ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) ƒ Surface mounted on FR-4 board, t ≤ 5sec. „ Starting TJ = 25°C, L = 6.8mH RG = 25Ω, IAS = -3.0A. (See Figure 12) 2 www.irf.com IRLMS6802PbF 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 10 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1 1 -1.50V -1.50V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 ° C TJ = 150 ° C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.6A -I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.0 V DS = -15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS6802PbF 1600 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = -4.5A 12 C, Capacitance (pF) 1200 Ciss VDS = -10V 9 800 6 400 Coss Crss 0 1 10 100 3 0 -VDS , Drain-to-Source Voltage (V) 0 4 8 12 16 20 24 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I 100 10us 10 100us 1ms 1 10ms TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLMS6802PbF 6.0 EAS , Single Pulse Avalanche Energy (mJ) 80 5.0 -ID , Drain Current (A) 60 ID -1.3A -2.4A BOTTOM -3.0A TOP 4.0 3.0 40 2.0 20 1.0 0.0 25 50 TC , Case Temperature ( ° C) 75 100 125 150 0 25 Starting TJ , Junction Temperature ( °C) 50 75 100 125 150 Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 Thermal Response (Z thJA ) PDM t1 t2 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS6802PbF Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) 2.80 (.111 ) -B- LEAD ASSIGNMENTS RECOMMENDED FOOTPRINT 2X 0.95 (.0375 ) 6X (1.06 (.042 ) 2.20 (.087 ) D 1.75 (.068 ) 1.50 (.060 ) -A6 1 5 2 4 3 3.00 (.118 ) 2.60 (.103 ) D S 6 1 D 5 2 D 4 3 G 0.95 ( .0375 ) 2X 6X 0.50 (.019 ) 0.35 (.014 ) 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S 0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES O O 6X 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 (SOT23 6L) Part Marking Information W = (1-26) IF PRECEDE D BY LAST DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y = YEAR W = WE EK 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D T OP LOT CODE PART NUMBER CODE REF ERENCE: A= B= C= D= E= F= G= H= IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 24 25 26 X Y Z W = (27-52) IF PRECEDE D BY A LETT ER YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D Note: A line above the work week (as s hown here) indicates Lead-Free. 50 51 52 X Y Z 6 www.irf.com IRLMS6802PbF Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Data and specifications subject to change without notice. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/05 7