IRLP3803

Previous Datasheet Index Next Data Sheet PD - _____ PRELIMINARY IRLP3803 VDSS = 30V RDS(on) = 0.006Ω ID = 120A HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 120 83 470 150 1.0 ±20 610 71 15 1.8 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. –––– –––– –––– Typ. –––– 0.24 –––– Max. 1.0 –––– 40 Units °C/W 8/4/95 To Order Previous Datasheet Index Next Data Sheet IRLP3803 Electrical Characteristics @ T = 25°C (unless otherwise specified) J V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 30 ––– ––– ––– 1.0 55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA 0.006 VGS = 10V, ID = 71A Ω 0.011 VGS = 4.5V, ID = 59A 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 71A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 71A ns ––– RG = 1.3Ω, VGS = 4.5V ––– RD = 0.20Ω, See Fig. 10 Between lead, ––– 5.0 ––– 6mm (0.25in.) nH from package ––– 13 ––– and center of die contact ––– 5000 ––– VGS = 0V ––– 1800 ––– pF VDS = 25V ––– 880 ––– ƒ = 1.0MHz, See Fig. 5 Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 230 29 35 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– 120 A ––– ––– 120 450 470 1.3 180 680 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 71A, VGS = 0V TJ = 25°C, IF = 71A di/dt = 100A/µs Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting T J = 25°C, L = 180µH RG = 25Ω, IAS = 71A. (See Figure 12) ISD ≤ 71A, di/dt ≤ 130A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 To Order Previous Datasheet Index Next Data Sheet IRLP3803 10000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP 10000 ID , Drain-to-Source Current (A) 1000 ID , Drain-to-Source Current (A) 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP 100 100 10 10 1 1 2.0V 0.1 0.1 2.0V 0.01 0.1 20µs PULSE WIDTH T J = 25°C 10 A 1 100 0.01 0.1 20µs PULSE WIDTH T J = 175°C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 175oC 1000 2.0 I D , Drain-to-Sourc e Curr ent ( A) TJ = 25°C 100 TJ = 175°C R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 120A 1.5 10 1.0 1 0.5 0.1 0.01 2.0 3.0 4.0 5.0 V DS = 25V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature To Order Previous Datasheet Index Next Data Sheet IRLP3803 10000 8000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C =C Ciss C rss = C gd + C oss ds gd 15 I D = 71A V DS = 24V V DS = 15V 12 C, Capacitance (pF) 6000 Coss 9 4000 6 Crss 2000 3 0 1 10 100 A 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 A 200 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs 100 TJ = 175°C ID , Drain Current (A) 100 100µs TJ = 25°C 1ms 10 0.4 0.8 1.2 1.6 2.0 2.4 VGS = 0V 2.8 A 10 1 TC = 25°C TJ = 175°C Single Pulse 10 10ms A 100 3.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area To Order Previous Datasheet Index Next Data Sheet IRLP3803 VDS 120 RD LIMITED BY PACKAGE 100 VGS RG D.U.T. VDD ID, Drain Current (Amps) 80 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 20 0 25 50 75 100 125 150 A 175 TC , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Ther mal R espons e ( ZthJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 A 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case To Order Previous Datasheet Index Next Data Sheet IRLP3803 1500 EAS , Single Pulse Avalanche Energy (mJ) TOP 1200 ID 29A 50A BOTTOM 71A 5.0 V 900 Fig 12a. Unclamped Inductive Test Circuit 600 300 0 VDD = 15V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 5.0 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit To Order Previous Datasheet Index Next Data Sheet IRLP3803 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG • • • • dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS To Order Previous Datasheet Index Next Data Sheet IRLP3803 Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 15.90 (.626) 15.30 (.602) -B- 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) Part Marking Information TO-247AC EXAMPLE : THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 3A1Q 9302 DATE CODE (YYWW) YY = YEAR WW WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 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