IRLR2908

PD - 94501 AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET D IRLR2908 IRLU2908 VDSS = 80V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G S RDS(on) = 28mΩ ID = 30A Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.\ The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRLR2908 I-Pak IRLU2908 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 39 28 30 150 120 0.77 ± 16 180 250 See Fig.12a,12b,15,16 2.3 -55 to + 175 Units A ™ Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value W W/°C V mJ A mJ V/ns °C h Peak Diode Recovery dv/dt e Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Avalanche Current ™ i d 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ. Max. 1.3 40 110 Units °C/W jà ––– ––– ––– www.irf.com 1 02/13/03 IRLR2908/IRLU2908 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 80 ––– ––– ––– 1.0 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.085 22.5 25 ––– ––– ––– ––– ––– ––– 22 6.0 11 12 95 36 55 4.5 7.5 1890 260 35 1920 170 310 ––– ––– 28 30 2.5 ––– 20 250 200 -200 33 9.1 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nH ns nC nA V S µA V mΩ Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 23A VGS = 4.5V, ID = 20A VDS = 25V, ID = 23A VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 23A VDS = 64V VGS = 4.5V VDD = 40V ID = 23A RG = 8.3Ω VGS = 4.5V V/°C Reference to 25°C, ID = 1mA f f VDS = VGS, ID = 250µA f D G Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 S VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 75 210 39 A 150 1.3 110 310 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 23A, VGS = 0V TJ = 25°C, IF = 23A, VDD = 25V di/dt = 100A/µs f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes  through ˆ are on page 11 HEXFET® is a registered trademark of International Rectifier. 2 www.irf.com IRLR2908/IRLU2908 1000 TOP VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 1000 TOP VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 BOTTOM 10 BOTTOM 2.5V 1 10 2.5V 1 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0.01 0.1 1 10 100 0.1 0.01 0.1 20µs PULSE WIDTH Tj = 175°C 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 60 ID, Drain-to-Source Current (Α) G FS , Forward Transconductance (S) TJ = 25°C 50 100 40 T J = 175°C T J = 175°C T J = 25°C 30 10 20 VDS = 25V 20µs PULSE WIDTH 1 2 3 4 5 10 VDS = 10V 20µs PULSE WIDTH 0 0 10 20 30 40 50 60 VGS , Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRLR2908/IRLU2908 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 5.0 ID= 23A VGS , Gate-to-Source Voltage (V) 4.0 VDS= 64V VDS= 40V VDS= 16V 10000 C, Capacitance(pF) Ciss 1000 3.0 Coss 100 2.0 Crss 1.0 10 1 10 100 0.0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 10msec 10.00 1.00 T J = 25°C VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR2908/IRLU2908 40 35 30 ID, Drain Current (A) RDS(on) , Drain-to-Source On Resistance 3.0 ID = 38A 2.5 VGS = 4.5V 25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 2.0 (Normalized) 1.5 1.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 P DM t1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C J = P DM x Z thJC 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR2908/IRLU2908 EAS , Single Pulse Avalanche Energy (mJ) 15V 400 VDS L DRIVER 300 ID 9.3A 16A BOTTOM 23A TOP RG 20V VGS D.U.T IAS tp + V - DD A 200 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 2.5 2.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 1.5 ID = 250µA 1.0 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRLR2908/IRLU2908 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 200 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 23A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRLR2908/IRLU2908 D.U.T Driver Gate Drive P.W. Period VGS=10V + P.W. Period D= ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRLR2908/IRLU2908 TO-252AA (D-Pak) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 0.58 (.023) 0.46 (.018) 2.28 (.090) TO-252AA (D-Pak) Part Marking Information Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRF R120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE IRFU120 9U 016 1P DATE CODE YEAR = 0 WEEK = 16 Notes: T his part marking information applies to devices produced after 02/26/2001 EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE ASS EMBLY LINE "A" PART NUMBER IRFU120 12 916A 34 INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A www.irf.com 9 IRLR2908/IRLU2908 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 6.22 (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3X 1.14 (.045) 0.76 (.030) 3X 0.89 (.035) 0.64 (.025) M AMB 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 2.28 (.090) 2X 0.25 (.010) I-Pak (TO-251AA) Part Marking Information Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 9U1P INTERNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE DATE CODE YEAR = 0 WEEK = 16 IRFU120 016 9U 1P Notes: T his part marking information applies to devices produced after 02/26/2001 EXAMPLE: T HIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" INT ERNATIONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER IRFU120 919A 56 78 DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A 10 www.irf.com IRLR2908/IRLU2908 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.71mH, RG = 25Ω, IAS = 23A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 23A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ‡ This value determined from sample failure population. 100% tested to this value in production. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/03 www.irf.com 11