IRLR7811WCPBF

SMPS MOSFET PD - 96064 IRLR7811WCPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l HEXFET® Power MOSFET VDSS 30V RDS(on) max 10.5mΩ Qg 19nC D-Pak IRLR7811WCPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 100°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation* Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 64 „ 45 „ 260 71 1.5 0.48 ± 12 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 2.1 50 110 Units °C/W Notes  through „ are on page 9 www.irf.com 1 05/24/06 IRLR7811WCPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) Gate Threshold Voltage ∆VGS(th) /∆TJ Gate Threshold Voltage Coefficient IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Qg Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Control Fet Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Total Gate Charge Sync Fet Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– ––– ––– ––– ––– ––– ––– 58 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 27 5.8 7.0 1.5 -5.0 ––– ––– ––– ––– ––– 21 5.0 1.7 6.6 5.5 8.3 17 10 1.6 18 4.8 11 23 2260 420 180 Max. ––– ––– 10.5 15 2.5 ––– 30 150 100 -100 ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA † VGS = 10V, ID = 15A „ mΩ VGS = 4.5V, ID = 12A V VDS = VGS, ID = 250µA mV/°C VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V nA VGS = -12V S VDS = 15V, ID = 12A nC VDS = 20V VGS = 4.5V nC ID = 12A VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V„ ID = 12A Clamped Inductive Load VGS = 0V VDS = 15V ƒ = 1.0MHz ns pF Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 140 12 7.1 Units mJ A mJ Diode Characteristics IS ISM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 64 „ showing the A G integral reverse ––– ––– 260 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 12A, VGS = 0V „ ––– 30 45 ns TJ = 25°C, IF =12A ––– 27 41 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR7811WCPbF 10000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 1000 100 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP 10 2.5V 1 10 2.5V 0.1 20µs PULSE WIDTH Tj = 25°C 1 20µs PULSE WIDTH Tj = 175°C 100 0.1 1 10 100 0.01 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.0 I D = 64A ID, Drain-to-Source Current (Α ) 100.00 R DS(on) , Drain-to-Source On Resistance T J = 175°C 1.5 (Normalized) 1.0 10.00 T J = 25°C VDS = 15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 0.5 1.00 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR7811WCPbF 10000 VGS = 0V, f = 1 MHZ Ciss = C + C , C SHORTED gs gd ds Crss = C gd Coss = Cds + Cgd 6 I D = 12A VDS = 24V VDS = 15V 5 Ciss VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 4 1000 Coss 2 Crss 1 100 1 10 100 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175 ° C ID, Drain-to-Source Current (A) 100 I SD , Reverse Drain Current (A) 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VDS, Drain-to-Source Voltage (V) 10msec 10 T J= 25 ° C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 100 V SD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR7811WCPbF 70 V DS LIMITED BY PACKAGE RD 60 VGS RG D.U.T. + 50 -VDD I D , Drain Current (A) 40 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 0.20 Thermal Response 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +T C 1 J = P DM x Z thJC 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR7811WCPbF 400 15V TOP 320 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER BOTTOM ID 4.9A 8.5A 12A RG VGS 20V D.U.T IAS tp + V - DD 240 A 0.01Ω 160 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 80 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 2.5 Current Regulator Same Type as D.U.T. VGS(th) Gate threshold Voltage (V) 50KΩ 2.0 12V .2µF .3µF 1.5 D.U.T. + V - DS ID = 250µA 1.0 VGS 3mA 0.5 IG ID Current Sampling Resistors 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 Fig 14. Gate Charge Test Circuit T J , Temperature ( °C ) Fig 13. Threshold Voltage Vs. Temperature 6 www.irf.com IRLR7811WCPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRLR7811WCPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAS ! XDUCÃ6TT@H7G` GPUÃ8P9@à !"# %Ã! Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9ÃPIÃXXà DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ6Å ,5)5 $   96U@Ã8P9@ `@6Sà X@@Fà GDI@Ã6 Ã2Ã! % I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ ÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚Ãvqvph‡r†Ã ÅGrhqA…rrÅĈhyvsvph‡v‚Ã‡‚ÇurÃ8‚†ˆ€r…yr‰ry 6TT@H7G` GPUÃ8P9@ 25 DIU@SI6UDPI6G S@8UDAD@S GPBP Q6SUÃIVH7@S ,5)5   96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPà 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % 6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ 8 www.irf.com IRLR7811WCPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION N OTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. ‚ Starting TJ = 25°C, L = 1.9mH R G = 25Ω, IAS = 12A. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2006 www.irf.com 9