IRLR8103V

PD-94021C IRLR8103V • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications G D • 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. D-Pak S DEVICE CHARACTERISTICS… RDS(on) QG QSW QOSS IRLR8103V 7.9 mΩ 27 nC 12 nC 29nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS > 10V) Pulsed Drain Current TC = 25°C TC= 90°C Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM IRLR8103V 30 ±20 91 63 363 115 60 -55 to 150 91 363 Units V ™ TC = 25°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃà TC = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current A W °C A ™ Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case h eh Symbol RθJA RθJC Typ. ––– ––– Max. 50 1.09 Units °C/W www.irf.com 1 10/22/04 IRLR8103V Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Symbol Min Typ Max Units BVDSS RDS(on) VGS(th) IDSS 30 ––– ––– 1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.8 ––– ––– ––– ––– ––– ––– ––– ––– 6.9 7.9 ––– ––– ––– ––– 9.0 10.5 3.0 50 20 V mΩ V µA µA nA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 15A VGS = 4.5V, ID = 15A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, TJ = 100°C VGS = ± 20V VGS = 5V, ID = 15A, VDS = 16V VGS = 5V, VDS < 100mV d d VDS = VGS, ID = 250µA Gate-Source Leakage Current Total Gate Charge, Control FET Total Gate Charge, Synch FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS QG QG QGS1 QGS2 QGD QSW QOSS RG td(on) tr td(off) tf Ciss Coss Crss ––– 100 ––– ±100 27 23 4.7 2.0 9.7 12 29 ––– 10 9 24 18 ––– ––– ––– ––– ––– ––– ––– 3.1 ––– ––– ––– ––– nC VDS = 16V, ID = 15A VDS = 16V, VGS = 0 Ω VDD = 16V ns ID = 15A VGS = 5.0V Clamped Inductive Load pF VGS = 16V, VGS=0 2672 ––– 1064 ––– 109 ––– Source-Drain Rating & Characteristics Parameter Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) Symbol Min Typ Max Units VSD Qrr Qrr(s) ––– ––– ––– 0.9 103 96 1.3 ––– ––– V nC nC f IS = 15A , VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IF = 15A di/dt = 700A/µs , (with 10BQ040) VDS= 16V, VGS = 0V, IF = 15A d Conditions f Notes:  ‚ ƒ „ … Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. † Rθ is measured at TJ approximately 90°C 2 www.irf.com IRLR8103V 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 100 2.7V 2.7V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 2.0 ID = 15A I D , Drain-to-Source Current (A) TJ = 25 ° C 1.5 100 TJ = 150 ° C 1.0 0.5 10 2.0 V DS= 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR8103V 5000 VGS , Gate-to-Source Voltage (V) 4000 VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 6 ID = 15A 5 V DS= 24V V DS= 15V C, Capacitance (pF) 4 3000 Ciss 3 2000 Coss 2 1000 1 Crss 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 0 5 10 15 20 25 30 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 10000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 150° C ID , Drain Current (A) 1000 10us 10 100 100us TJ = 25 ° C 1 10 1ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 7. Typical Source-Drain Diode Forward Voltage Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR8103V 100 V DS RD LIMITED BY PACKAGE 80 VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + VDD ID , Drain Current (A) - 60 40 Fig 10a. Switching Time Test Circuit Fig 10a. Switching Time Test Circuit VDS 90% 20 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 PDM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR8103V R DS ( on ) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.016 0.014 0.014 0.012 0.012 VGS = 4.5V 0.010 0.010 ID = 15A 0.008 VGS = 10V 0.008 0.006 0 50 100 150 200 250 300 350 ID , Drain Current ( A ) 0.006 0.0 2.0 4.0 6.0 8.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 6 www.irf.com IRLR8103V D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) 4.57 (.180) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB 0.58 (.023) 0.46 (.018) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" N ote: "P" in as s embly line position indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFR120 916A 12 34 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFR120 12 P916A 34 ASS EMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY SITE CODE www.irf.com 7 IRLR8103V D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 8 www.irf.com